Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 8101-8107 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 11 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2011 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- Atomic layer deposition
- TiO(2)
- roughness
- anatase
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Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide films. / Puurunen, Riikka; Sajavaara, Timo; Santala, Eero; Miikkulainen, Ville; Saukkonen, Tapio; Laitinen, Mikko; Leskelä, Markku.
In: Journal of Nanoscience and Nanotechnology, Vol. 11, No. 9, 2011, p. 8101-8107.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide films
AU - Puurunen, Riikka
AU - Sajavaara, Timo
AU - Santala, Eero
AU - Miikkulainen, Ville
AU - Saukkonen, Tapio
AU - Laitinen, Mikko
AU - Leskelä, Markku
PY - 2011
Y1 - 2011
N2 - The surface roughness of thin films is an important parameter related to the sticking behaviour of surfaces in the manufacturing of microelectomechanical systems (MEMS). In this work, TiO2 films made by atomic layer deposition (ALD) with the TiCl4–H2O process were characterized for their growth, roughness and crystallinity as function of deposition temperature (110–300 °C), film thickness (up to ∼100 nm) and substrate (thermal SiO2, RCA-cleaned Si, Al2O3). TiO2 films got rougher with increasing film thickness and to some extent with increasing deposition temperature. The substrate drastically influenced the crystallization behaviour of the film: for films of about 20 nm thickness, on thermal SiO2 and RCA-cleaned Si, anatase TiO2 crystal diameter was about 40 nm, while on Al2O3 surface the diameter was about a micrometer. The roughness could be controlled from 0.2 nm up to several nanometers, which makes the TiO2 films candidates for adhesion engineering in MEMS.
AB - The surface roughness of thin films is an important parameter related to the sticking behaviour of surfaces in the manufacturing of microelectomechanical systems (MEMS). In this work, TiO2 films made by atomic layer deposition (ALD) with the TiCl4–H2O process were characterized for their growth, roughness and crystallinity as function of deposition temperature (110–300 °C), film thickness (up to ∼100 nm) and substrate (thermal SiO2, RCA-cleaned Si, Al2O3). TiO2 films got rougher with increasing film thickness and to some extent with increasing deposition temperature. The substrate drastically influenced the crystallization behaviour of the film: for films of about 20 nm thickness, on thermal SiO2 and RCA-cleaned Si, anatase TiO2 crystal diameter was about 40 nm, while on Al2O3 surface the diameter was about a micrometer. The roughness could be controlled from 0.2 nm up to several nanometers, which makes the TiO2 films candidates for adhesion engineering in MEMS.
KW - Atomic layer deposition
KW - TiO(2)
KW - roughness
KW - anatase
U2 - 10.1166/jnn.2011.5060
DO - 10.1166/jnn.2011.5060
M3 - Article
VL - 11
SP - 8101
EP - 8107
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 9
ER -