Abstract
This paper describe the small signal properties of four 155 GHz low
noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based
metamorphic high electron mobility transistors with gate length of 2x15 µm in
coplanar waveguide topology. The scattering parameters and noise figures of
the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with
the measured noise figures of 6.7-7.2 dB.
Original language | English |
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Title of host publication | 2006 Asia-Pasific Microwave Conference Proceedings, APMC 2006 |
Place of Publication | Piscataway, NJ |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 173-176 |
ISBN (Print) | 4-902339-08-0 |
DOIs | |
Publication status | Published - 2006 |
MoE publication type | B3 Non-refereed article in conference proceedings |
Event | Asia-Pasific Microwave Conference 2006, APMC 2006: APMC 2006 - Yokohama, Japan Duration: 12 Dec 2006 → 15 Dec 2006 |
Conference
Conference | Asia-Pasific Microwave Conference 2006, APMC 2006 |
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Country/Territory | Japan |
City | Yokohama |
Period | 12/12/06 → 15/12/06 |
Keywords
- Low noise amplifiers
- MMIC amplifiers
- Metamorphic HEMTs
- High electron mobility transistors
Fingerprint
Dive into the research topics of 'Coplanar 155 GHz MHEMT MMIC low noise amplifiers'. Together they form a unique fingerprint.Prizes
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2006 APMC Prize
Kantanen, M. (Recipient), Kärkkäinen, M. (Recipient), Varonen, M. (Recipient), Weber, R. (Recipient), Leuther, A. (Recipient), Seelmann-Eggebert, M. (Recipient), Närhi, T. (Recipient) & Halonen, K. A. I. (Recipient), 14 Dec 2006
Prize: Prize for a work