Coplanar 155 GHz MHEMT MMIC low noise amplifiers

Mikko Kantanen; Mikko Kärkkäinen; Mikko Varonen; Timo Karttaavi; Rainer Weber; Arnulf Leuther; Matthias Seelmann-Eggebert; Tapani Närhi; Kari A. I. Halonen

doi:10.1109/APMC.2006.4429402

Coplanar 155 GHz MHEMT MMIC low noise amplifiers

Mikko Kantanen, Mikko Kärkkäinen, Mikko Varonen, Timo Karttaavi, Rainer Weber, Arnulf Leuther, Matthias Seelmann-Eggebert, Tapani Närhi, Kari A. I. Halonen

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

1 Citation (Scopus)

Abstract

This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based metamorphic high electron mobility transistors with gate length of 2x15 µm in coplanar waveguide topology. The scattering parameters and noise figures of the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with the measured noise figures of 6.7-7.2 dB.

Original language	English
Title of host publication	2006 Asia-Pasific Microwave Conference Proceedings, APMC 2006
Place of Publication	Piscataway, NJ
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	173-176
ISBN (Print)	4-902339-08-0
DOIs	https://doi.org/10.1109/APMC.2006.4429402
Publication status	Published - 2006
MoE publication type	B3 Non-refereed article in conference proceedings
Event	Asia-Pasific Microwave Conference 2006, APMC 2006: APMC 2006 - Yokohama, Japan Duration: 12 Dec 2006 → 15 Dec 2006

Conference

Conference	Asia-Pasific Microwave Conference 2006, APMC 2006
Country/Territory	Japan
City	Yokohama
Period	12/12/06 → 15/12/06

Keywords

Low noise amplifiers
MMIC amplifiers
Metamorphic HEMTs
High electron mobility transistors

Access to Document

10.1109/APMC.2006.4429402

Cite this

Kantanen, M., Kärkkäinen, M., Varonen, M., Karttaavi, T., Weber, R., Leuther, A., Seelmann-Eggebert, M., Närhi, T., & Halonen, K. A. I. (2006). Coplanar 155 GHz MHEMT MMIC low noise amplifiers. In 2006 Asia-Pasific Microwave Conference Proceedings, APMC 2006 (pp. 173-176). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/APMC.2006.4429402

@inproceedings{9ab93a4c113f42db959363d98b4210fc,

title = "Coplanar 155 GHz MHEMT MMIC low noise amplifiers",

abstract = "This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based metamorphic high electron mobility transistors with gate length of 2x15 µm in coplanar waveguide topology. The scattering parameters and noise figures of the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with the measured noise figures of 6.7-7.2 dB.",

keywords = "Low noise amplifiers, MMIC amplifiers, Metamorphic HEMTs, High electron mobility transistors",

author = "Mikko Kantanen and Mikko K{\"a}rkk{\"a}inen and Mikko Varonen and Timo Karttaavi and Rainer Weber and Arnulf Leuther and Matthias Seelmann-Eggebert and Tapani N{\"a}rhi and Halonen, {Kari A. I.}",

year = "2006",

doi = "10.1109/APMC.2006.4429402",

language = "English",

isbn = "4-902339-08-0",

pages = "173--176",

booktitle = "2006 Asia-Pasific Microwave Conference Proceedings, APMC 2006",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "Asia-Pasific Microwave Conference 2006, APMC 2006 : APMC 2006 ; Conference date: 12-12-2006 Through 15-12-2006",

}

Kantanen, M, Kärkkäinen, M, Varonen, M, Karttaavi, T, Weber, R, Leuther, A, Seelmann-Eggebert, M, Närhi, T & Halonen, KAI 2006, Coplanar 155 GHz MHEMT MMIC low noise amplifiers. in 2006 Asia-Pasific Microwave Conference Proceedings, APMC 2006 . IEEE Institute of Electrical and Electronic Engineers, Piscataway, NJ, pp. 173-176, Asia-Pasific Microwave Conference 2006, APMC 2006, Yokohama, Japan, 12/12/06. https://doi.org/10.1109/APMC.2006.4429402

Coplanar 155 GHz MHEMT MMIC low noise amplifiers. / Kantanen, Mikko; Kärkkäinen, Mikko; Varonen, Mikko et al.

2006 Asia-Pasific Microwave Conference Proceedings, APMC 2006 . Piscataway, NJ : IEEE Institute of Electrical and Electronic Engineers, 2006. p. 173-176.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

TY - GEN

T1 - Coplanar 155 GHz MHEMT MMIC low noise amplifiers

AU - Kantanen, Mikko

AU - Kärkkäinen, Mikko

AU - Varonen, Mikko

AU - Karttaavi, Timo

AU - Weber, Rainer

AU - Leuther, Arnulf

AU - Seelmann-Eggebert, Matthias

AU - Närhi, Tapani

AU - Halonen, Kari A. I.

PY - 2006

Y1 - 2006

N2 - This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based metamorphic high electron mobility transistors with gate length of 2x15 µm in coplanar waveguide topology. The scattering parameters and noise figures of the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with the measured noise figures of 6.7-7.2 dB.

AB - This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based metamorphic high electron mobility transistors with gate length of 2x15 µm in coplanar waveguide topology. The scattering parameters and noise figures of the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with the measured noise figures of 6.7-7.2 dB.

KW - Low noise amplifiers

KW - MMIC amplifiers

KW - Metamorphic HEMTs

KW - High electron mobility transistors

U2 - 10.1109/APMC.2006.4429402

DO - 10.1109/APMC.2006.4429402

M3 - Conference article in proceedings

SN - 4-902339-08-0

SP - 173

EP - 176

BT - 2006 Asia-Pasific Microwave Conference Proceedings, APMC 2006

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Piscataway, NJ

T2 - Asia-Pasific Microwave Conference 2006, APMC 2006

Y2 - 12 December 2006 through 15 December 2006

ER -

Coplanar 155 GHz MHEMT MMIC low noise amplifiers

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this