Coplanar 155 GHz MHEMT MMIC low noise amplifiers

Mikko Kantanen, Mikko Kärkkäinen, Mikko Varonen, Timo Karttaavi, Rainer Weber, Arnulf Leuther, Matthias Seelmann-Eggebert, Tapani Närhi, Kari A. I. Halonen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

1 Citation (Scopus)


This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based metamorphic high electron mobility transistors with gate length of 2x15 µm in coplanar waveguide topology. The scattering parameters and noise figures of the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with the measured noise figures of 6.7-7.2 dB.
Original languageEnglish
Title of host publication2006 Asia-Pasific Microwave Conference Proceedings, APMC 2006
Place of PublicationPiscataway, NJ
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Print)4-902339-08-0
Publication statusPublished - 2006
MoE publication typeB3 Non-refereed article in conference proceedings
EventAsia-Pasific Microwave Conference 2006, APMC 2006: APMC 2006 - Yokohama, Japan
Duration: 12 Dec 200615 Dec 2006


ConferenceAsia-Pasific Microwave Conference 2006, APMC 2006


  • Low noise amplifiers
  • MMIC amplifiers
  • Metamorphic HEMTs
  • High electron mobility transistors


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