Coplanar 94 GHz metamorphic HEMT low noise amplifiers

Mikko Kärkkäinen; Mikko Varonen; Kari A.I. Halonen; Mikko Kantanen; Timo Karttaavi; Rainer Weber; Arnulf Leuther; Matthias Seelmann-Eggebert; Tapani Närhi

doi:10.1109/CSICS.2006.319911

Coplanar 94 GHz metamorphic HEMT low noise amplifiers

Mikko Kärkkäinen, Mikko Varonen, Kari A.I. Halonen, Mikko Kantanen, Timo Karttaavi, Rainer Weber, Arnulf Leuther, Matthias Seelmann-Eggebert, Tapani Närhi

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

We report four low noise amplifiers for a 94 GHz cloud profiling radar. The LNAs are designed using coplanar waveguides and they were manufactured with a 100-nm metamorphic high electron mobility transistor technology. The chip sizes are 2.00 × 1.00 mm² and 2.25 × 1.00 mm². The gate width of the transistor is 4×15 μm. The scattering parameters and the noise figures of the amplifiers were measured at W-band and the results are presented. The measured gain at 94 GHz was 17-23 dB and the measured noise figure 3.0-3.3 dB using a 0.8 V drain-to-source voltage and a drain current of 8-16 mA per stage.

Original language	English
Title of host publication	2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	29-32
Number of pages	4
ISBN (Print)	1-4244-0126-7, 978-1-4244-0126-0
DOIs	https://doi.org/10.1109/CSICS.2006.319911
Publication status	Published - 2006
MoE publication type	A4 Article in a conference publication
Event	2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS - San Antonio, United States Duration: 12 Nov 2006 → 15 Nov 2006

Conference

Conference	2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS
Country/Territory	United States
City	San Antonio
Period	12/11/06 → 15/11/06

Keywords

Low-noise amplifiers
MMIC amplifiers

Access to Document

10.1109/CSICS.2006.319911

Cite this

Kärkkäinen, M., Varonen, M., Halonen, K. A. I., Kantanen, M., Karttaavi, T., Weber, R., Leuther, A., Seelmann-Eggebert, M., & Närhi, T. (2006). Coplanar 94 GHz metamorphic HEMT low noise amplifiers. In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS (pp. 29-32). Article 4109970 IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/CSICS.2006.319911

@inproceedings{50b74f34f2c7443a90b77d3441b1d690,

title = "Coplanar 94 GHz metamorphic HEMT low noise amplifiers",

abstract = "We report four low noise amplifiers for a 94 GHz cloud profiling radar. The LNAs are designed using coplanar waveguides and they were manufactured with a 100-nm metamorphic high electron mobility transistor technology. The chip sizes are 2.00 × 1.00 mm2 and 2.25 × 1.00 mm2. The gate width of the transistor is 4×15 μm. The scattering parameters and the noise figures of the amplifiers were measured at W-band and the results are presented. The measured gain at 94 GHz was 17-23 dB and the measured noise figure 3.0-3.3 dB using a 0.8 V drain-to-source voltage and a drain current of 8-16 mA per stage.",

keywords = "Low-noise amplifiers, MMIC amplifiers",

author = "Mikko K{\"a}rkk{\"a}inen and Mikko Varonen and Halonen, {Kari A.I.} and Mikko Kantanen and Timo Karttaavi and Rainer Weber and Arnulf Leuther and Matthias Seelmann-Eggebert and Tapani N{\"a}rhi",

year = "2006",

doi = "10.1109/CSICS.2006.319911",

language = "English",

isbn = "1-4244-0126-7",

pages = "29--32",

booktitle = "2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS ; Conference date: 12-11-2006 Through 15-11-2006",

}

Kärkkäinen, M, Varonen, M, Halonen, KAI, Kantanen, M , Karttaavi, T, Weber, R, Leuther, A, Seelmann-Eggebert, M & Närhi, T 2006, Coplanar 94 GHz metamorphic HEMT low noise amplifiers. in 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS., 4109970, IEEE Institute of Electrical and Electronic Engineers, pp. 29-32, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS, San Antonio, Texas, United States, 12/11/06. https://doi.org/10.1109/CSICS.2006.319911

Coplanar 94 GHz metamorphic HEMT low noise amplifiers. / Kärkkäinen, Mikko; Varonen, Mikko; Halonen, Kari A.I. et al.
2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS. IEEE Institute of Electrical and Electronic Engineers, 2006. p. 29-32 4109970.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Coplanar 94 GHz metamorphic HEMT low noise amplifiers

AU - Kärkkäinen, Mikko

AU - Varonen, Mikko

AU - Halonen, Kari A.I.

AU - Kantanen, Mikko

AU - Karttaavi, Timo

AU - Weber, Rainer

AU - Leuther, Arnulf

AU - Seelmann-Eggebert, Matthias

AU - Närhi, Tapani

PY - 2006

Y1 - 2006

N2 - We report four low noise amplifiers for a 94 GHz cloud profiling radar. The LNAs are designed using coplanar waveguides and they were manufactured with a 100-nm metamorphic high electron mobility transistor technology. The chip sizes are 2.00 × 1.00 mm2 and 2.25 × 1.00 mm2. The gate width of the transistor is 4×15 μm. The scattering parameters and the noise figures of the amplifiers were measured at W-band and the results are presented. The measured gain at 94 GHz was 17-23 dB and the measured noise figure 3.0-3.3 dB using a 0.8 V drain-to-source voltage and a drain current of 8-16 mA per stage.

AB - We report four low noise amplifiers for a 94 GHz cloud profiling radar. The LNAs are designed using coplanar waveguides and they were manufactured with a 100-nm metamorphic high electron mobility transistor technology. The chip sizes are 2.00 × 1.00 mm2 and 2.25 × 1.00 mm2. The gate width of the transistor is 4×15 μm. The scattering parameters and the noise figures of the amplifiers were measured at W-band and the results are presented. The measured gain at 94 GHz was 17-23 dB and the measured noise figure 3.0-3.3 dB using a 0.8 V drain-to-source voltage and a drain current of 8-16 mA per stage.

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KW - MMIC amplifiers

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SN - 1-4244-0126-7

SN - 978-1-4244-0126-0

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BT - 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS

Y2 - 12 November 2006 through 15 November 2006

ER -

Coplanar 94 GHz metamorphic HEMT low noise amplifiers

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