Correlation between film properties and anhydrous HF vapor etching behavior of silicon oxide deposited by CVD methods

Heini Ritala (Corresponding Author), Jyrki Kiihamäki, Esa Puukilainen

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low-pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. The film compositions and etch residue were analyzed as part of the study. The effects of the oxide deposition method, precursors, annealing and oxide composition on the etch rate are discussed. Annealing decreases the etch rate and removes water and other hydrogen-containing residue from the films. Films grown using a tetraethoxysilane (TEOS) precursor etch fast, unannealed films even 30 times faster than thermal oxide and they also contain more OH–species than films from SiH4 precursors even after annealing. The etch rate of all CVD films is close to that of thermal oxide after annealing at 1000 °C, around 0.1 µm/min. Etch rate differences between CVD films are much larger than those observed during wet HF etching.
    Original languageEnglish
    Pages (from-to)D399-D402
    Number of pages4
    JournalJournal of the Electrochemical Society
    Volume158
    Issue number6
    DOIs
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Silicon oxides
    Chemical vapor deposition
    Etching
    Vapors
    Oxides
    Annealing
    Low pressure chemical vapor deposition
    Wet etching
    Plasma enhanced chemical vapor deposition
    Chemical analysis
    Silicon Dioxide
    Hydrogen
    Silica
    Plasmas
    Water
    Polymers

    Cite this

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    title = "Correlation between film properties and anhydrous HF vapor etching behavior of silicon oxide deposited by CVD methods",
    abstract = "The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low-pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. The film compositions and etch residue were analyzed as part of the study. The effects of the oxide deposition method, precursors, annealing and oxide composition on the etch rate are discussed. Annealing decreases the etch rate and removes water and other hydrogen-containing residue from the films. Films grown using a tetraethoxysilane (TEOS) precursor etch fast, unannealed films even 30 times faster than thermal oxide and they also contain more OH–species than films from SiH4 precursors even after annealing. The etch rate of all CVD films is close to that of thermal oxide after annealing at 1000 °C, around 0.1 µm/min. Etch rate differences between CVD films are much larger than those observed during wet HF etching.",
    author = "Heini Ritala and Jyrki Kiiham{\"a}ki and Esa Puukilainen",
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    doi = "10.1149/1.3582318",
    language = "English",
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    journal = "Journal of the Electrochemical Society",
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    Correlation between film properties and anhydrous HF vapor etching behavior of silicon oxide deposited by CVD methods. / Ritala, Heini (Corresponding Author); Kiihamäki, Jyrki; Puukilainen, Esa.

    In: Journal of the Electrochemical Society, Vol. 158, No. 6, 2011, p. D399-D402.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Correlation between film properties and anhydrous HF vapor etching behavior of silicon oxide deposited by CVD methods

    AU - Ritala, Heini

    AU - Kiihamäki, Jyrki

    AU - Puukilainen, Esa

    N1 - Project code: 33290 1.3

    PY - 2011

    Y1 - 2011

    N2 - The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low-pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. The film compositions and etch residue were analyzed as part of the study. The effects of the oxide deposition method, precursors, annealing and oxide composition on the etch rate are discussed. Annealing decreases the etch rate and removes water and other hydrogen-containing residue from the films. Films grown using a tetraethoxysilane (TEOS) precursor etch fast, unannealed films even 30 times faster than thermal oxide and they also contain more OH–species than films from SiH4 precursors even after annealing. The etch rate of all CVD films is close to that of thermal oxide after annealing at 1000 °C, around 0.1 µm/min. Etch rate differences between CVD films are much larger than those observed during wet HF etching.

    AB - The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low-pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. The film compositions and etch residue were analyzed as part of the study. The effects of the oxide deposition method, precursors, annealing and oxide composition on the etch rate are discussed. Annealing decreases the etch rate and removes water and other hydrogen-containing residue from the films. Films grown using a tetraethoxysilane (TEOS) precursor etch fast, unannealed films even 30 times faster than thermal oxide and they also contain more OH–species than films from SiH4 precursors even after annealing. The etch rate of all CVD films is close to that of thermal oxide after annealing at 1000 °C, around 0.1 µm/min. Etch rate differences between CVD films are much larger than those observed during wet HF etching.

    U2 - 10.1149/1.3582318

    DO - 10.1149/1.3582318

    M3 - Article

    VL - 158

    SP - D399-D402

    JO - Journal of the Electrochemical Society

    JF - Journal of the Electrochemical Society

    SN - 0013-4651

    IS - 6

    ER -