Correlation between film properties and anhydrous HF vapor etching behavior of silicon oxide deposited by CVD methods

Heini Ritala (Corresponding Author), Jyrki Kiihamäki, Esa Puukilainen

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low-pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. The film compositions and etch residue were analyzed as part of the study. The effects of the oxide deposition method, precursors, annealing and oxide composition on the etch rate are discussed. Annealing decreases the etch rate and removes water and other hydrogen-containing residue from the films. Films grown using a tetraethoxysilane (TEOS) precursor etch fast, unannealed films even 30 times faster than thermal oxide and they also contain more OH–species than films from SiH4 precursors even after annealing. The etch rate of all CVD films is close to that of thermal oxide after annealing at 1000 °C, around 0.1 µm/min. Etch rate differences between CVD films are much larger than those observed during wet HF etching.
Original languageEnglish
Pages (from-to)D399-D402
Number of pages4
JournalJournal of the Electrochemical Society
Volume158
Issue number6
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon oxides
Chemical vapor deposition
Etching
Vapors
Oxides
Annealing
Low pressure chemical vapor deposition
Wet etching
Plasma enhanced chemical vapor deposition
Chemical analysis
Silicon Dioxide
Hydrogen
Silica
Plasmas
Water
Polymers

Cite this

@article{fbc05f5f92f048c3b546a117bf1318e2,
title = "Correlation between film properties and anhydrous HF vapor etching behavior of silicon oxide deposited by CVD methods",
abstract = "The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low-pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. The film compositions and etch residue were analyzed as part of the study. The effects of the oxide deposition method, precursors, annealing and oxide composition on the etch rate are discussed. Annealing decreases the etch rate and removes water and other hydrogen-containing residue from the films. Films grown using a tetraethoxysilane (TEOS) precursor etch fast, unannealed films even 30 times faster than thermal oxide and they also contain more OH–species than films from SiH4 precursors even after annealing. The etch rate of all CVD films is close to that of thermal oxide after annealing at 1000 °C, around 0.1 µm/min. Etch rate differences between CVD films are much larger than those observed during wet HF etching.",
author = "Heini Ritala and Jyrki Kiiham{\"a}ki and Esa Puukilainen",
note = "Project code: 33290 1.3",
year = "2011",
doi = "10.1149/1.3582318",
language = "English",
volume = "158",
pages = "D399--D402",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
number = "6",

}

Correlation between film properties and anhydrous HF vapor etching behavior of silicon oxide deposited by CVD methods. / Ritala, Heini (Corresponding Author); Kiihamäki, Jyrki; Puukilainen, Esa.

In: Journal of the Electrochemical Society, Vol. 158, No. 6, 2011, p. D399-D402.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Correlation between film properties and anhydrous HF vapor etching behavior of silicon oxide deposited by CVD methods

AU - Ritala, Heini

AU - Kiihamäki, Jyrki

AU - Puukilainen, Esa

N1 - Project code: 33290 1.3

PY - 2011

Y1 - 2011

N2 - The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low-pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. The film compositions and etch residue were analyzed as part of the study. The effects of the oxide deposition method, precursors, annealing and oxide composition on the etch rate are discussed. Annealing decreases the etch rate and removes water and other hydrogen-containing residue from the films. Films grown using a tetraethoxysilane (TEOS) precursor etch fast, unannealed films even 30 times faster than thermal oxide and they also contain more OH–species than films from SiH4 precursors even after annealing. The etch rate of all CVD films is close to that of thermal oxide after annealing at 1000 °C, around 0.1 µm/min. Etch rate differences between CVD films are much larger than those observed during wet HF etching.

AB - The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low-pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. The film compositions and etch residue were analyzed as part of the study. The effects of the oxide deposition method, precursors, annealing and oxide composition on the etch rate are discussed. Annealing decreases the etch rate and removes water and other hydrogen-containing residue from the films. Films grown using a tetraethoxysilane (TEOS) precursor etch fast, unannealed films even 30 times faster than thermal oxide and they also contain more OH–species than films from SiH4 precursors even after annealing. The etch rate of all CVD films is close to that of thermal oxide after annealing at 1000 °C, around 0.1 µm/min. Etch rate differences between CVD films are much larger than those observed during wet HF etching.

U2 - 10.1149/1.3582318

DO - 10.1149/1.3582318

M3 - Article

VL - 158

SP - D399-D402

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 6

ER -