Abstract
| Original language | English |
|---|---|
| Pages (from-to) | D399-D402 |
| Number of pages | 4 |
| Journal | Journal of the Electrochemical Society |
| Volume | 158 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2011 |
| MoE publication type | A1 Journal article-refereed |
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Correlation between film properties and anhydrous HF vapor etching behavior of silicon oxide deposited by CVD methods. / Ritala, Heini (Corresponding Author); Kiihamäki, Jyrki; Puukilainen, Esa.
In: Journal of the Electrochemical Society, Vol. 158, No. 6, 2011, p. D399-D402.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Correlation between film properties and anhydrous HF vapor etching behavior of silicon oxide deposited by CVD methods
AU - Ritala, Heini
AU - Kiihamäki, Jyrki
AU - Puukilainen, Esa
N1 - Project code: 33290 1.3
PY - 2011
Y1 - 2011
N2 - The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low-pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. The film compositions and etch residue were analyzed as part of the study. The effects of the oxide deposition method, precursors, annealing and oxide composition on the etch rate are discussed. Annealing decreases the etch rate and removes water and other hydrogen-containing residue from the films. Films grown using a tetraethoxysilane (TEOS) precursor etch fast, unannealed films even 30 times faster than thermal oxide and they also contain more OH–species than films from SiH4 precursors even after annealing. The etch rate of all CVD films is close to that of thermal oxide after annealing at 1000 °C, around 0.1 µm/min. Etch rate differences between CVD films are much larger than those observed during wet HF etching.
AB - The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low-pressure chemical vapor deposition (PECVD and LPCVD) methods was studied. The film compositions and etch residue were analyzed as part of the study. The effects of the oxide deposition method, precursors, annealing and oxide composition on the etch rate are discussed. Annealing decreases the etch rate and removes water and other hydrogen-containing residue from the films. Films grown using a tetraethoxysilane (TEOS) precursor etch fast, unannealed films even 30 times faster than thermal oxide and they also contain more OH–species than films from SiH4 precursors even after annealing. The etch rate of all CVD films is close to that of thermal oxide after annealing at 1000 °C, around 0.1 µm/min. Etch rate differences between CVD films are much larger than those observed during wet HF etching.
U2 - 10.1149/1.3582318
DO - 10.1149/1.3582318
M3 - Article
VL - 158
SP - D399-D402
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 6
ER -