Keyphrases
Annealing
100%
Silicon Oxide
100%
Etching Rate
100%
Film Properties
100%
Etching Behavior
100%
Anhydrous HF
100%
CVD Method
100%
HF Vapor Etching
100%
Thermal Oxide
50%
Low Pressure Chemical Vapor Deposition (LPCVD)
50%
Film Composition
25%
Silane
25%
Silicon Dioxide Films
25%
Precursor Composition
25%
Plasma Enhanced
25%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
25%
Oxide Deposition
25%
Rate Difference
25%
Oxide Composition
25%
Tetraethoxysilane
25%
HF Etching
25%
Deposition Methods
25%
INIS
correlations
100%
chemical vapor deposition
100%
films
100%
vapors
100%
silicon oxides
100%
etching
100%
oxides
44%
annealing
44%
precursor
33%
residues
22%
water
11%
plasma
11%
hydrogen
11%
deposition
11%
low pressure
11%
Engineering
Etch Rate
100%
Film Property
100%
Chemical Vapor Deposition
100%
Silicon Oxide
100%
Deposition Method
25%
Vapor Deposition
25%
Silicon Dioxide
25%
Material Science
Chemical Vapor Deposition
100%
Film
100%
Silicon
100%
Oxide Compound
100%
Annealing
22%
Low Pressure Chemical Vapor Deposition
22%
Tetraethyl Orthosilicate
11%
Silicon Dioxide
11%
Chemical Engineering
Silicon Oxide
100%
Chemical Vapor Deposition
100%
Film
100%
Low Pressure Chemical Vapor Deposition
22%
Plasma Enhanced Chemical Vapor Deposition
11%
Silicon Dioxide
11%