Correlation between resistance behavior and mass transport in Al–Si/Ti multilayer interconnects

Manuela Finetti; Ilkka Suni; Aldo Armigliato; Antonio Garulli; Andrea Scorzoni

doi:10.1116/1.574254

Correlation between resistance behavior and mass transport in Al–Si/Ti multilayer interconnects

Manuela Finetti, Ilkka Suni, Aldo Armigliato, Antonio Garulli, Andrea Scorzoni

VTT Technical Research Centre of Finland

National Research Council (CNR)

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Abstract

In this work we investigate the correlation between the resistance behavior and the mass transport in narrow line interconnects with a laminated structure incorporating single or multiple layers of Ti in AI-Si. For comparison, homogeneous AI-Si films are also studied. A temperature-ramp resistance analysis is applied at direct wafer level. In multilayer interconnects the resistance change is only detected above the typical failure temperatures of the homogeneous stripes. Different degradation mechanisms are also observed, although the activation energies suggest similar electromigration processes. The improved stability against electromigration in the laminated structures is related to the formation of a continuous barrier of the intermetallic compound TiA1₃ preventing voids from propagating across the film.

Original language	English
Pages (from-to)	2854-2858
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	5
Issue number	5
DOIs	https://doi.org/10.1116/1.574254
Publication status	Published - 1987
MoE publication type	A1 Journal article-refereed

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10.1116/1.574254

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title = "Correlation between resistance behavior and mass transport in Al–Si/Ti multilayer interconnects",

abstract = "In this work we investigate the correlation between the resistance behavior and the mass transport in narrow line interconnects with a laminated structure incorporating single or multiple layers of Ti in AI-Si. For comparison, homogeneous AI-Si films are also studied. A temperature-ramp resistance analysis is applied at direct wafer level. In multilayer interconnects the resistance change is only detected above the typical failure temperatures of the homogeneous stripes. Different degradation mechanisms are also observed, although the activation energies suggest similar electromigration processes. The improved stability against electromigration in the laminated structures is related to the formation of a continuous barrier of the intermetallic compound TiA13 preventing voids from propagating across the film. ",

author = "Manuela Finetti and Ilkka Suni and Aldo Armigliato and Antonio Garulli and Andrea Scorzoni",

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AU - Finetti, Manuela

AU - Suni, Ilkka

AU - Armigliato, Aldo

AU - Garulli, Antonio

AU - Scorzoni, Andrea

PY - 1987

Y1 - 1987

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AB - In this work we investigate the correlation between the resistance behavior and the mass transport in narrow line interconnects with a laminated structure incorporating single or multiple layers of Ti in AI-Si. For comparison, homogeneous AI-Si films are also studied. A temperature-ramp resistance analysis is applied at direct wafer level. In multilayer interconnects the resistance change is only detected above the typical failure temperatures of the homogeneous stripes. Different degradation mechanisms are also observed, although the activation energies suggest similar electromigration processes. The improved stability against electromigration in the laminated structures is related to the formation of a continuous barrier of the intermetallic compound TiA13 preventing voids from propagating across the film.

U2 - 10.1116/1.574254

DO - 10.1116/1.574254

M3 - Article

SN - 0734-2101

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

ER -

Correlation between resistance behavior and mass transport in Al–Si/Ti multilayer interconnects

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