Critical scattering in the vicinity of the metal-insulator transition in Mn-doped GaAs

A. Varpula, S. Novikov, P. Kuivalainen (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn-doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal-insulator transition and the critical scattering due to the exchange interaction between the charge carrier spins and the localized magnetic moments. The model is based on Kubo-Greenwood formalism and the scaling theory of localization. The contribution from the critical scattering is calculated using the Green's function technique and the self-consistent Born approximation. The model explains well the measured resistivity in Mn-doped GaAs as a function of temperature, doping concentration, and magnetic field.

Original languageEnglish
Pages (from-to)834-839
JournalPhysica Status Solidi B: Basic Research
Volume249
Issue number4
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Keywords

  • Critical scattering
  • Magnetic semiconductors
  • Spintronics
  • Transport theory

Fingerprint Dive into the research topics of 'Critical scattering in the vicinity of the metal-insulator transition in Mn-doped GaAs'. Together they form a unique fingerprint.

  • Cite this