Critical scattering in the vicinity of the metal-insulator transition in Mn-doped GaAs

A. Varpula, S. Novikov, P. Kuivalainen (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn-doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal-insulator transition and the critical scattering due to the exchange interaction between the charge carrier spins and the localized magnetic moments. The model is based on Kubo-Greenwood formalism and the scaling theory of localization. The contribution from the critical scattering is calculated using the Green's function technique and the self-consistent Born approximation. The model explains well the measured resistivity in Mn-doped GaAs as a function of temperature, doping concentration, and magnetic field.

Original languageEnglish
Pages (from-to)834-839
JournalPhysica Status Solidi B: Basic Research
Volume249
Issue number4
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Fingerprint

Metal insulator transition
insulators
Scattering
scattering
metals
Semiconductor materials
Born approximation
Exchange interactions
Magnetic moments
Charge carriers
Green's function
Transport properties
charge carriers
Green's functions
magnetic moments
transport properties
Doping (additives)
Magnetic fields
formalism
scaling

Keywords

  • Critical scattering
  • Magnetic semiconductors
  • Spintronics
  • Transport theory

Cite this

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Critical scattering in the vicinity of the metal-insulator transition in Mn-doped GaAs. / Varpula, A.; Novikov, S.; Kuivalainen, P. (Corresponding Author).

In: Physica Status Solidi B: Basic Research, Vol. 249, No. 4, 2012, p. 834-839.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Varpula, A.

AU - Novikov, S.

AU - Kuivalainen, P.

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N2 - We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn-doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal-insulator transition and the critical scattering due to the exchange interaction between the charge carrier spins and the localized magnetic moments. The model is based on Kubo-Greenwood formalism and the scaling theory of localization. The contribution from the critical scattering is calculated using the Green's function technique and the self-consistent Born approximation. The model explains well the measured resistivity in Mn-doped GaAs as a function of temperature, doping concentration, and magnetic field.

AB - We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn-doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal-insulator transition and the critical scattering due to the exchange interaction between the charge carrier spins and the localized magnetic moments. The model is based on Kubo-Greenwood formalism and the scaling theory of localization. The contribution from the critical scattering is calculated using the Green's function technique and the self-consistent Born approximation. The model explains well the measured resistivity in Mn-doped GaAs as a function of temperature, doping concentration, and magnetic field.

KW - Critical scattering

KW - Magnetic semiconductors

KW - Spintronics

KW - Transport theory

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