Crossover from synaptic to neuronal functionalities through carrier concentration control in Nb-doped SrTiO3-based organic ferroelectric tunnel junctions

Sayani Majumdar, Hongwei Tan, Ishan Pande, Sebastiaan Van Dijken

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The development of neuromorphic architectures depends on the engineering of new functional materials and material interfaces. Here, we present a study on organic ferroelectric tunnel junctions (FTJs) comprising a metal/ferroelectric/semiconductor stack with varying charge carrier density in the semiconducting electrode and demonstrate fast, volatile switching behavior when the bound polarization charges in the tunnel barrier are insufficiently screened. The manipulation of ferroelectric polarization and depolarization dynamics in our FTJs through pulse magnitude, duration, and delay time constitutes a controlled transition from synaptic behavior to integrate-and-fire neuronal activity. This ability to tune the response of a single memristor device via charge carrier optimization opens pathways for the design of smart electronic neurons.

Original languageEnglish
Article number091114
JournalAPL Materials
Volume7
Issue number9
DOIs
Publication statusPublished - 1 Sep 2019
MoE publication typeA1 Journal article-refereed

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Tunnel junctions
Ferroelectric materials
Carrier concentration
Charge carriers
Memristors
Polarization
Functional materials
Depolarization
Neurons
Time delay
Tunnels
Fires
Metals
Semiconductor materials
Electrodes
strontium titanium oxide

Cite this

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Crossover from synaptic to neuronal functionalities through carrier concentration control in Nb-doped SrTiO3-based organic ferroelectric tunnel junctions. / Majumdar, Sayani; Tan, Hongwei; Pande, Ishan; Van Dijken, Sebastiaan.

In: APL Materials, Vol. 7, No. 9, 091114, 01.09.2019.

Research output: Contribution to journalArticleScientificpeer-review

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