Crossover from synaptic to neuronal functionalities through carrier concentration control in Nb-doped SrTiO3-based organic ferroelectric tunnel junctions

Sayani Majumdar, Hongwei Tan, Ishan Pande, Sebastiaan Van Dijken

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    The development of neuromorphic architectures depends on the engineering of new functional materials and material interfaces. Here, we present a study on organic ferroelectric tunnel junctions (FTJs) comprising a metal/ferroelectric/semiconductor stack with varying charge carrier density in the semiconducting electrode and demonstrate fast, volatile switching behavior when the bound polarization charges in the tunnel barrier are insufficiently screened. The manipulation of ferroelectric polarization and depolarization dynamics in our FTJs through pulse magnitude, duration, and delay time constitutes a controlled transition from synaptic behavior to integrate-and-fire neuronal activity. This ability to tune the response of a single memristor device via charge carrier optimization opens pathways for the design of smart electronic neurons.

    Original languageEnglish
    Article number091114
    JournalAPL Materials
    Volume7
    Issue number9
    DOIs
    Publication statusPublished - 1 Sep 2019
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Tunnel junctions
    Ferroelectric materials
    Carrier concentration
    Charge carriers
    Memristors
    Polarization
    Functional materials
    Depolarization
    Neurons
    Time delay
    Tunnels
    Fires
    Metals
    Semiconductor materials
    Electrodes
    strontium titanium oxide

    Cite this

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    abstract = "The development of neuromorphic architectures depends on the engineering of new functional materials and material interfaces. Here, we present a study on organic ferroelectric tunnel junctions (FTJs) comprising a metal/ferroelectric/semiconductor stack with varying charge carrier density in the semiconducting electrode and demonstrate fast, volatile switching behavior when the bound polarization charges in the tunnel barrier are insufficiently screened. The manipulation of ferroelectric polarization and depolarization dynamics in our FTJs through pulse magnitude, duration, and delay time constitutes a controlled transition from synaptic behavior to integrate-and-fire neuronal activity. This ability to tune the response of a single memristor device via charge carrier optimization opens pathways for the design of smart electronic neurons.",
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    Crossover from synaptic to neuronal functionalities through carrier concentration control in Nb-doped SrTiO3-based organic ferroelectric tunnel junctions. / Majumdar, Sayani; Tan, Hongwei; Pande, Ishan; Van Dijken, Sebastiaan.

    In: APL Materials, Vol. 7, No. 9, 091114, 01.09.2019.

    Research output: Contribution to journalArticleScientificpeer-review

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