Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Heorhii Bohuslavskyi; S. Barraud; V. Barral; M. Casse; L. Le Guevel; L. Hutin; B. Bertrand; A. Crippa; X. Jehl; G. Pillonnet; A. G. M. Jansen; F. Arnaud; P. Galy; R. Maurand; S. De Franceschi; M. Sanquer; M. Vinet

doi:10.1109/ted.2018.2859636

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Heorhii Bohuslavskyi, S. Barraud, V. Barral, M. Casse, L. Le Guevel, L. Hutin, B. Bertrand, A. Crippa, X. Jehl, G. Pillonnet, A. G. M. Jansen, F. Arnaud, P. Galy, R. Maurand, S. De Franceschi, M. Sanquer, M. Vinet

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Research output: Contribution to journal › Article › Scientific › peer-review

31 Citations (Scopus)

Abstract

Extensive electrical characterization of ring oscillators (ROs) made in high-κ metal gate 28-nm fully depleted silicon-on-insulator technology is presented for a set of temperatures between 296 and 4.3 K. First, delay per stage (τ P ), static current (I STAT ), and dynamic current (I DYN ) are analyzed for the case of the increase of threshold voltage (V TH ) observed at low temperature. Then, the same analysis is performed by compensating V TH to a constant, temperature-independent value through forward body biasing (FBB). Energy efficiency optimization is proposed for different supply voltages (V DD ) in order to find an optimal operating point combining both high RO frequencies and low-power dissipation. We show that the EnergyDelay product can be significantly reduced at low temperature by applying an FBB voltage (V FBB ). We demonstrate that outstanding performance of RO in terms of speed (τ P = 37 ps) and static current (7nA/stage) can be achieved at 4.3 K with V DD reduced down to 0.325 V.

Original language	English
Article number	8440625
Pages (from-to)	3682-3688
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	9
DOIs	https://doi.org/10.1109/ted.2018.2859636
Publication status	Published - Sept 2018
MoE publication type	A1 Journal article-refereed

Keywords

28-nm fully depleted silicon-on-insulator (FD-SOI)
body biasing
cryogenic electronics
quantum computing
ring oscillator (RO)
ultralow power

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/ted.2018.2859636

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Bohuslavskyi, H., Barraud, S., Barral, V., Casse, M., Guevel, L. L., Hutin, L., Bertrand, B., Crippa, A., Jehl, X., Pillonnet, G., Jansen, A. G. M., Arnaud, F., Galy, P., Maurand, R., Franceschi, S. D., Sanquer, M., & Vinet, M. (2018). Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization. IEEE Transactions on Electron Devices, 65(9), 3682-3688. Article 8440625. https://doi.org/10.1109/ted.2018.2859636

@article{29a39960634b4dfa905290cfeb080f30,

title = "Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization",

abstract = "Extensive electrical characterization of ring oscillators (ROs) made in high-κ metal gate 28-nm fully depleted silicon-on-insulator technology is presented for a set of temperatures between 296 and 4.3 K. First, delay per stage (τ P ), static current (I STAT ), and dynamic current (I DYN ) are analyzed for the case of the increase of threshold voltage (V TH ) observed at low temperature. Then, the same analysis is performed by compensating V TH to a constant, temperature-independent value through forward body biasing (FBB). Energy efficiency optimization is proposed for different supply voltages (V DD ) in order to find an optimal operating point combining both high RO frequencies and low-power dissipation. We show that the EnergyDelay product can be significantly reduced at low temperature by applying an FBB voltage (V FBB ). We demonstrate that outstanding performance of RO in terms of speed (τ P = 37 ps) and static current (7nA/stage) can be achieved at 4.3 K with V DD reduced down to 0.325 V.",

keywords = "28-nm fully depleted silicon-on-insulator (FD-SOI), body biasing, cryogenic electronics, quantum computing, ring oscillator (RO), ultralow power",

author = "Heorhii Bohuslavskyi and S. Barraud and V. Barral and M. Casse and Guevel, {L. Le} and L. Hutin and B. Bertrand and A. Crippa and X. Jehl and G. Pillonnet and Jansen, {A. G. M.} and F. Arnaud and P. Galy and R. Maurand and Franceschi, {S. De} and M. Sanquer and M. Vinet",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2018",

month = sep,

doi = "10.1109/ted.2018.2859636",

language = "English",

volume = "65",

pages = "3682--3688",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

number = "9",

}

Bohuslavskyi, H, Barraud, S, Barral, V, Casse, M, Guevel, LL, Hutin, L, Bertrand, B, Crippa, A, Jehl, X, Pillonnet, G, Jansen, AGM, Arnaud, F, Galy, P, Maurand, R, Franceschi, SD, Sanquer, M & Vinet, M 2018, 'Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization', IEEE Transactions on Electron Devices, vol. 65, no. 9, 8440625, pp. 3682-3688. https://doi.org/10.1109/ted.2018.2859636

TY - JOUR

T1 - Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

AU - Bohuslavskyi, Heorhii

AU - Barraud, S.

AU - Barral, V.

AU - Casse, M.

AU - Guevel, L. Le

AU - Hutin, L.

AU - Bertrand, B.

AU - Crippa, A.

AU - Jehl, X.

AU - Pillonnet, G.

AU - Jansen, A. G. M.

AU - Arnaud, F.

AU - Galy, P.

AU - Maurand, R.

AU - Franceschi, S. De

AU - Sanquer, M.

AU - Vinet, M.

PY - 2018/9

Y1 - 2018/9

N2 - Extensive electrical characterization of ring oscillators (ROs) made in high-κ metal gate 28-nm fully depleted silicon-on-insulator technology is presented for a set of temperatures between 296 and 4.3 K. First, delay per stage (τ P ), static current (I STAT ), and dynamic current (I DYN ) are analyzed for the case of the increase of threshold voltage (V TH ) observed at low temperature. Then, the same analysis is performed by compensating V TH to a constant, temperature-independent value through forward body biasing (FBB). Energy efficiency optimization is proposed for different supply voltages (V DD ) in order to find an optimal operating point combining both high RO frequencies and low-power dissipation. We show that the EnergyDelay product can be significantly reduced at low temperature by applying an FBB voltage (V FBB ). We demonstrate that outstanding performance of RO in terms of speed (τ P = 37 ps) and static current (7nA/stage) can be achieved at 4.3 K with V DD reduced down to 0.325 V.

AB - Extensive electrical characterization of ring oscillators (ROs) made in high-κ metal gate 28-nm fully depleted silicon-on-insulator technology is presented for a set of temperatures between 296 and 4.3 K. First, delay per stage (τ P ), static current (I STAT ), and dynamic current (I DYN ) are analyzed for the case of the increase of threshold voltage (V TH ) observed at low temperature. Then, the same analysis is performed by compensating V TH to a constant, temperature-independent value through forward body biasing (FBB). Energy efficiency optimization is proposed for different supply voltages (V DD ) in order to find an optimal operating point combining both high RO frequencies and low-power dissipation. We show that the EnergyDelay product can be significantly reduced at low temperature by applying an FBB voltage (V FBB ). We demonstrate that outstanding performance of RO in terms of speed (τ P = 37 ps) and static current (7nA/stage) can be achieved at 4.3 K with V DD reduced down to 0.325 V.

KW - 28-nm fully depleted silicon-on-insulator (FD-SOI)

KW - body biasing

KW - cryogenic electronics

KW - quantum computing

KW - ring oscillator (RO)

KW - ultralow power

UR - http://www.scopus.com/inward/record.url?scp=85052195587&partnerID=8YFLogxK

U2 - 10.1109/ted.2018.2859636

DO - 10.1109/ted.2018.2859636

M3 - Article

SN - 0018-9383

VL - 65

SP - 3682

EP - 3688

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

M1 - 8440625

ER -

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Abstract

Keywords

UN SDGs

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