Cryogenic idium-phosphide HEMT low-noise amplifiers at V-band

J. Tanskanen, P. Kangaslahti, P. Ahtola, P. Jukkala, Timo Karttaavi, Manu Lahdes, Jussi Varis, Jussi Tuovinen

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Abstract

Indium-phosphide (InP) high electron-mobility transistors potentially have the lowest noise at frequencies below 100 GHz, especially when cryogenically cooled. We have designed monolithically integrated InP millimeter-wave low-noise amplifiers (LNAs) for the European Space Agency (ESA) science Planck mission. The Planck LNA's design goal for noise temperature is 35 K at the ambient temperature of 20 K. The operation bandwidth is over 20% at 70 GHz. The maximum allowable power consumption for a Planck LNA (gain 20 dB) is P/sub be/=5 mW at 20 K. The chosen foundry for these LNA's was DaimlerChrysler Research, Ulm, Germany. The DaimlerChrysler 0.18-/spl mu/m InP process was used. This process is well suited for V-band LNA design, giving sufficient gain with very low noise. Several one-, two-, and three-stage amplifiers were designed. The best of them exhibited a noise figure lower than 5.5 dB with a gain higher than 14 dB over the 50-68-GHz range at room temperature. The best single-stage amplifier demonstrated a noise figure of 4.5 dB and a gain higher than 5 dS from 50 to 60 GHz at room temperature. On-wafer measurements on these monolithic-microwave integrated circuits (MMIC's) have been done at MilliLab, Espoo, Finland. For the module fabrication, MMIC chips will be mounted in a WR-15 waveguide split-block housing.
Original languageEnglish
Pages (from-to)1283-1286
Number of pages4
JournalIEEE Transactions on Microwave Theory and Techniques
Volume48
Issue number7 pt. 2
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

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phosphides
Low noise amplifiers
High electron mobility transistors
extremely high frequencies
high electron mobility transistors
Indium phosphide
Cryogenics
low noise
cryogenics
amplifiers
indium phosphides
Monolithic microwave integrated circuits
Noise figure
microwave circuits
high gain
integrated circuits
Temperature
Foundries
amplifier design
foundries

Cite this

Tanskanen, J., Kangaslahti, P., Ahtola, P., Jukkala, P., Karttaavi, T., Lahdes, M., ... Tuovinen, J. (2000). Cryogenic idium-phosphide HEMT low-noise amplifiers at V-band. IEEE Transactions on Microwave Theory and Techniques, 48(7 pt. 2), 1283-1286. https://doi.org/10.1109/22.853474
Tanskanen, J. ; Kangaslahti, P. ; Ahtola, P. ; Jukkala, P. ; Karttaavi, Timo ; Lahdes, Manu ; Varis, Jussi ; Tuovinen, Jussi. / Cryogenic idium-phosphide HEMT low-noise amplifiers at V-band. In: IEEE Transactions on Microwave Theory and Techniques. 2000 ; Vol. 48, No. 7 pt. 2. pp. 1283-1286.
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Tanskanen, J, Kangaslahti, P, Ahtola, P, Jukkala, P, Karttaavi, T, Lahdes, M, Varis, J & Tuovinen, J 2000, 'Cryogenic idium-phosphide HEMT low-noise amplifiers at V-band', IEEE Transactions on Microwave Theory and Techniques, vol. 48, no. 7 pt. 2, pp. 1283-1286. https://doi.org/10.1109/22.853474

Cryogenic idium-phosphide HEMT low-noise amplifiers at V-band. / Tanskanen, J.; Kangaslahti, P.; Ahtola, P.; Jukkala, P.; Karttaavi, Timo; Lahdes, Manu; Varis, Jussi; Tuovinen, Jussi.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 48, No. 7 pt. 2, 2000, p. 1283-1286.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Cryogenic idium-phosphide HEMT low-noise amplifiers at V-band

AU - Tanskanen, J.

AU - Kangaslahti, P.

AU - Ahtola, P.

AU - Jukkala, P.

AU - Karttaavi, Timo

AU - Lahdes, Manu

AU - Varis, Jussi

AU - Tuovinen, Jussi

PY - 2000

Y1 - 2000

N2 - Indium-phosphide (InP) high electron-mobility transistors potentially have the lowest noise at frequencies below 100 GHz, especially when cryogenically cooled. We have designed monolithically integrated InP millimeter-wave low-noise amplifiers (LNAs) for the European Space Agency (ESA) science Planck mission. The Planck LNA's design goal for noise temperature is 35 K at the ambient temperature of 20 K. The operation bandwidth is over 20% at 70 GHz. The maximum allowable power consumption for a Planck LNA (gain 20 dB) is P/sub be/=5 mW at 20 K. The chosen foundry for these LNA's was DaimlerChrysler Research, Ulm, Germany. The DaimlerChrysler 0.18-/spl mu/m InP process was used. This process is well suited for V-band LNA design, giving sufficient gain with very low noise. Several one-, two-, and three-stage amplifiers were designed. The best of them exhibited a noise figure lower than 5.5 dB with a gain higher than 14 dB over the 50-68-GHz range at room temperature. The best single-stage amplifier demonstrated a noise figure of 4.5 dB and a gain higher than 5 dS from 50 to 60 GHz at room temperature. On-wafer measurements on these monolithic-microwave integrated circuits (MMIC's) have been done at MilliLab, Espoo, Finland. For the module fabrication, MMIC chips will be mounted in a WR-15 waveguide split-block housing.

AB - Indium-phosphide (InP) high electron-mobility transistors potentially have the lowest noise at frequencies below 100 GHz, especially when cryogenically cooled. We have designed monolithically integrated InP millimeter-wave low-noise amplifiers (LNAs) for the European Space Agency (ESA) science Planck mission. The Planck LNA's design goal for noise temperature is 35 K at the ambient temperature of 20 K. The operation bandwidth is over 20% at 70 GHz. The maximum allowable power consumption for a Planck LNA (gain 20 dB) is P/sub be/=5 mW at 20 K. The chosen foundry for these LNA's was DaimlerChrysler Research, Ulm, Germany. The DaimlerChrysler 0.18-/spl mu/m InP process was used. This process is well suited for V-band LNA design, giving sufficient gain with very low noise. Several one-, two-, and three-stage amplifiers were designed. The best of them exhibited a noise figure lower than 5.5 dB with a gain higher than 14 dB over the 50-68-GHz range at room temperature. The best single-stage amplifier demonstrated a noise figure of 4.5 dB and a gain higher than 5 dS from 50 to 60 GHz at room temperature. On-wafer measurements on these monolithic-microwave integrated circuits (MMIC's) have been done at MilliLab, Espoo, Finland. For the module fabrication, MMIC chips will be mounted in a WR-15 waveguide split-block housing.

U2 - 10.1109/22.853474

DO - 10.1109/22.853474

M3 - Article

VL - 48

SP - 1283

EP - 1286

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 7 pt. 2

ER -