Cryogenic indium phosphide HEMT low noise amplifiers at V-band

J. Tanskanen, H. Salminen, P. Kangaslahti, P. Jukkala, Timo Karttaavi, Manu Lahdes, Jussi Tuovinen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

Original language	English
Title of host publication	U.R.S.I/IEEE XXIV Conference on Radio Science
Publisher	University of Turku
Pages	96 - 97
ISBN (Print)	951-29-1531-6
Publication status	Published - 1999
MoE publication type	B3 Non-refereed article in conference proceedings
Event	URSI/IEEE XXIV Convention on Radio Science - Turku, Finland Duration: 4 Oct 1999 → 5 Oct 1999

Conference	URSI/IEEE XXIV Convention on Radio Science
Country/Territory	Finland
City	Turku
Period	4/10/99 → 5/10/99

Cite this

@inproceedings{d8f2d00330ca4b87a542d1825b87e496,

title = "Cryogenic indium phosphide HEMT low noise amplifiers at V-band",

author = "J. Tanskanen and H. Salminen and P. Kangaslahti and P. Jukkala and Timo Karttaavi and Manu Lahdes and Jussi Tuovinen",

year = "1999",

language = "English",

isbn = "951-29-1531-6",

pages = "96 -- 97",

booktitle = "U.R.S.I/IEEE XXIV Conference on Radio Science",

publisher = "University of Turku",

address = "Finland",

note = "URSI/IEEE XXIV Convention on Radio Science ; Conference date: 04-10-1999 Through 05-10-1999",

}

TY - GEN

T1 - Cryogenic indium phosphide HEMT low noise amplifiers at V-band

AU - Tanskanen, J.

AU - Salminen, H.

AU - Kangaslahti, P.

AU - Jukkala, P.

AU - Karttaavi, Timo

AU - Lahdes, Manu

AU - Tuovinen, Jussi

PY - 1999

Y1 - 1999

M3 - Conference article in proceedings

SN - 951-29-1531-6

SP - 96

EP - 97

BT - U.R.S.I/IEEE XXIV Conference on Radio Science

PB - University of Turku

T2 - URSI/IEEE XXIV Convention on Radio Science

Y2 - 4 October 1999 through 5 October 1999

ER -