Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

Mikko Varonen; Kieran Cleary; Denizhan Karaca; Kari A.I. Halonerr

doi:10.1109/MWSYM.2018.8439505

Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

Mikko Varonen, Kieran Cleary, Denizhan Karaca, Kari A.I. Halonerr

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

4 Citations (Scopus)

268 Downloads (Pure)

Abstract

In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

Original language	English
Title of host publication	Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1503-1506
Number of pages	4
Volume	2018-June
ISBN (Print)	978-1-5386-5067-7
DOIs	https://doi.org/10.1109/MWSYM.2018.8439505
Publication status	Published - 17 Aug 2018
MoE publication type	A4 Article in a conference publication
Event	2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 - Philadelphia, United States Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Country/Territory	United States
City	Philadelphia
Period	10/06/18 → 15/06/18

Keywords

CMOS
Cryogenic
low-noise amplifiers
MMIC

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10.1109/MWSYM.2018.8439505

ACCEPTED_AUTHOR_MANUSCRIPT_IEEE_IMS2018_MVaronenAccepted author manuscript, 829 KB

Cite this

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title = "Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier",

abstract = "In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.",

keywords = "CMOS, Cryogenic, low-noise amplifiers, MMIC",

author = "Mikko Varonen and Kieran Cleary and Denizhan Karaca and Halonerr, {Kari A.I.}",

note = "Funding Information: The work of M. Varonen was supported through the Academy of Finland under Academy Research Fellow project MIDERI. Publisher Copyright: {\textcopyright} 2018 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

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Varonen, M, Cleary, K, Karaca, D & Halonerr, KAI 2018, Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. in Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. vol. 2018-June, 8439505, IEEE Institute of Electrical and Electronic Engineers, pp. 1503-1506, 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018, Philadelphia, United States, 10/06/18. https://doi.org/10.1109/MWSYM.2018.8439505

Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. / Varonen, Mikko; Cleary, Kieran; Karaca, Denizhan et al.
Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Vol. 2018-June IEEE Institute of Electrical and Electronic Engineers, 2018. p. 1503-1506 8439505.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Varonen, Mikko

AU - Cleary, Kieran

AU - Karaca, Denizhan

AU - Halonerr, Kari A.I.

N1 - Funding Information: The work of M. Varonen was supported through the Academy of Finland under Academy Research Fellow project MIDERI. Publisher Copyright: © 2018 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2018/8/17

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N2 - In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

AB - In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

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Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

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