Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

Mikko Varonen, Kieran Cleary, Denizhan Karaca, Kari A.I. Halonerr

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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Abstract

In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

Original languageEnglish
Title of host publicationProceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages1503-1506
Number of pages4
Volume2018-June
ISBN (Print)978-1-5386-5067-7
DOIs
Publication statusPublished - 17 Aug 2018
MoE publication typeA4 Article in a conference publication
Event2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 - Philadelphia, United States
Duration: 10 Jun 201815 Jun 2018

Conference

Conference2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
CountryUnited States
CityPhiladelphia
Period10/06/1815/06/18

Fingerprint

Low noise amplifiers
Millimeter waves
Cryogenics
low noise
millimeter waves
cryogenics
CMOS
amplifiers
noise temperature
Temperature
SOI (semiconductors)
International Space Station
coverings
frequency ranges
chips
wafers
room temperature

Keywords

  • CMOS
  • Cryogenic
  • low-noise amplifiers
  • MMIC

Cite this

Varonen, M., Cleary, K., Karaca, D., & Halonerr, K. A. I. (2018). Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. In Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 (Vol. 2018-June, pp. 1503-1506). [8439505] Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/MWSYM.2018.8439505
Varonen, Mikko ; Cleary, Kieran ; Karaca, Denizhan ; Halonerr, Kari A.I. / Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Vol. 2018-June Institute of Electrical and Electronic Engineers IEEE, 2018. pp. 1503-1506
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Varonen, M, Cleary, K, Karaca, D & Halonerr, KAI 2018, Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. in Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. vol. 2018-June, 8439505, Institute of Electrical and Electronic Engineers IEEE, pp. 1503-1506, 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018, Philadelphia, United States, 10/06/18. https://doi.org/10.1109/MWSYM.2018.8439505

Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. / Varonen, Mikko; Cleary, Kieran; Karaca, Denizhan; Halonerr, Kari A.I.

Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Vol. 2018-June Institute of Electrical and Electronic Engineers IEEE, 2018. p. 1503-1506 8439505.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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Varonen M, Cleary K, Karaca D, Halonerr KAI. Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. In Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Vol. 2018-June. Institute of Electrical and Electronic Engineers IEEE. 2018. p. 1503-1506. 8439505 https://doi.org/10.1109/MWSYM.2018.8439505