Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

Mikko Varonen, Kieran Cleary, Denizhan Karaca, Kari A.I. Halonerr

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)
    17 Downloads (Pure)

    Abstract

    In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

    Original languageEnglish
    Title of host publicationProceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages1503-1506
    Number of pages4
    Volume2018-June
    ISBN (Print)978-1-5386-5067-7
    DOIs
    Publication statusPublished - 17 Aug 2018
    MoE publication typeA4 Article in a conference publication
    Event2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 - Philadelphia, United States
    Duration: 10 Jun 201815 Jun 2018

    Conference

    Conference2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
    CountryUnited States
    CityPhiladelphia
    Period10/06/1815/06/18

    Fingerprint

    Low noise amplifiers
    Millimeter waves
    Cryogenics
    low noise
    millimeter waves
    cryogenics
    CMOS
    amplifiers
    noise temperature
    Temperature
    SOI (semiconductors)
    International Space Station
    coverings
    frequency ranges
    chips
    wafers
    room temperature

    Keywords

    • CMOS
    • Cryogenic
    • low-noise amplifiers
    • MMIC

    Cite this

    Varonen, M., Cleary, K., Karaca, D., & Halonerr, K. A. I. (2018). Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. In Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 (Vol. 2018-June, pp. 1503-1506). [8439505] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/MWSYM.2018.8439505
    Varonen, Mikko ; Cleary, Kieran ; Karaca, Denizhan ; Halonerr, Kari A.I. / Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Vol. 2018-June IEEE Institute of Electrical and Electronic Engineers , 2018. pp. 1503-1506
    @inproceedings{ae67ef37fd0644fd92822a0b93534c6b,
    title = "Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier",
    abstract = "In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.",
    keywords = "CMOS, Cryogenic, low-noise amplifiers, MMIC",
    author = "Mikko Varonen and Kieran Cleary and Denizhan Karaca and Halonerr, {Kari A.I.}",
    year = "2018",
    month = "8",
    day = "17",
    doi = "10.1109/MWSYM.2018.8439505",
    language = "English",
    isbn = "978-1-5386-5067-7",
    volume = "2018-June",
    pages = "1503--1506",
    booktitle = "Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Varonen, M, Cleary, K, Karaca, D & Halonerr, KAI 2018, Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. in Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. vol. 2018-June, 8439505, IEEE Institute of Electrical and Electronic Engineers , pp. 1503-1506, 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018, Philadelphia, United States, 10/06/18. https://doi.org/10.1109/MWSYM.2018.8439505

    Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. / Varonen, Mikko; Cleary, Kieran; Karaca, Denizhan; Halonerr, Kari A.I.

    Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Vol. 2018-June IEEE Institute of Electrical and Electronic Engineers , 2018. p. 1503-1506 8439505.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

    AU - Varonen, Mikko

    AU - Cleary, Kieran

    AU - Karaca, Denizhan

    AU - Halonerr, Kari A.I.

    PY - 2018/8/17

    Y1 - 2018/8/17

    N2 - In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

    AB - In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

    KW - CMOS

    KW - Cryogenic

    KW - low-noise amplifiers

    KW - MMIC

    UR - http://www.scopus.com/inward/record.url?scp=85053067326&partnerID=8YFLogxK

    U2 - 10.1109/MWSYM.2018.8439505

    DO - 10.1109/MWSYM.2018.8439505

    M3 - Conference article in proceedings

    AN - SCOPUS:85053067326

    SN - 978-1-5386-5067-7

    VL - 2018-June

    SP - 1503

    EP - 1506

    BT - Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Varonen M, Cleary K, Karaca D, Halonerr KAI. Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. In Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Vol. 2018-June. IEEE Institute of Electrical and Electronic Engineers . 2018. p. 1503-1506. 8439505 https://doi.org/10.1109/MWSYM.2018.8439505