Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

Mikko Varonen, Kieran Cleary, Denizhan Karaca, Kari A.I. Halonerr

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    2 Citations (Scopus)
    78 Downloads (Pure)

    Abstract

    In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

    Original languageEnglish
    Title of host publicationProceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages1503-1506
    Number of pages4
    Volume2018-June
    ISBN (Print)978-1-5386-5067-7
    DOIs
    Publication statusPublished - 17 Aug 2018
    MoE publication typeA4 Article in a conference publication
    Event2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 - Philadelphia, United States
    Duration: 10 Jun 201815 Jun 2018

    Conference

    Conference2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
    CountryUnited States
    CityPhiladelphia
    Period10/06/1815/06/18

    Keywords

    • CMOS
    • Cryogenic
    • low-noise amplifiers
    • MMIC

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