Abstract
In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.
Original language | English |
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Title of host publication | Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 1503-1506 |
Number of pages | 4 |
Volume | 2018-June |
ISBN (Print) | 978-1-5386-5067-7 |
DOIs | |
Publication status | Published - 17 Aug 2018 |
MoE publication type | A4 Article in a conference publication |
Event | 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 - Philadelphia, United States Duration: 10 Jun 2018 → 15 Jun 2018 |
Conference
Conference | 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 |
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Country/Territory | United States |
City | Philadelphia |
Period | 10/06/18 → 15/06/18 |
Keywords
- CMOS
- Cryogenic
- low-noise amplifiers
- MMIC