Cryogenic MMIC Low-Noise Amplifiers for V-band

Mikko Varonen, Lorene Samoska, Pekka Kangaslahti, Andy Fung, Rohit Gawande, Mary Soria, Alejandro Peralta, Robert Lin, Richard Lai, Xiaobing Mei, Stephen Sarkozy

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

3 Citations (Scopus)

Abstract

In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.
Original languageEnglish
Title of host publication2017 IEEE MTT-S International Microwave Symposium, IMS 2017
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages172-175
Number of pages4
ISBN (Electronic)978-1-5090-6360-4
ISBN (Print)978-1-5090-6361-1
DOIs
Publication statusPublished - 4 Oct 2017
MoE publication typeA4 Article in a conference publication
Event2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honolulu, United States
Duration: 4 Jun 20179 Jun 2017

Conference

Conference2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Abbreviated titleIMS 2017
CountryUnited States
CityHonolulu
Period4/06/179/06/17

Fingerprint

Low noise amplifiers
Monolithic microwave integrated circuits
extremely high frequencies
noise temperature
Cryogenics
low noise
cryogenics
amplifiers
modules
Waveguides
Temperature
receivers
waveguides
High electron mobility transistors
Mylar (trademark)
high electron mobility transistors
Alumina
Vacuum
cascades
aluminum oxides

Keywords

  • cryogenic
  • InP HEMT
  • low-noise amplifiers
  • MMIC

Cite this

Varonen, M., Samoska, L., Kangaslahti, P., Fung, A., Gawande, R., Soria, M., ... Sarkozy, S. (2017). Cryogenic MMIC Low-Noise Amplifiers for V-band. In 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 (pp. 172-175). [8058970] Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/MWSYM.2017.8058970
Varonen, Mikko ; Samoska, Lorene ; Kangaslahti, Pekka ; Fung, Andy ; Gawande, Rohit ; Soria, Mary ; Peralta, Alejandro ; Lin, Robert ; Lai, Richard ; Mei, Xiaobing ; Sarkozy, Stephen. / Cryogenic MMIC Low-Noise Amplifiers for V-band. 2017 IEEE MTT-S International Microwave Symposium, IMS 2017. Institute of Electrical and Electronic Engineers IEEE, 2017. pp. 172-175
@inproceedings{24fb061d101e4eee8e576d1c3dbec3c3,
title = "Cryogenic MMIC Low-Noise Amplifiers for V-band",
abstract = "In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.",
keywords = "cryogenic, InP HEMT, low-noise amplifiers, MMIC",
author = "Mikko Varonen and Lorene Samoska and Pekka Kangaslahti and Andy Fung and Rohit Gawande and Mary Soria and Alejandro Peralta and Robert Lin and Richard Lai and Xiaobing Mei and Stephen Sarkozy",
note = "Project: 109268",
year = "2017",
month = "10",
day = "4",
doi = "10.1109/MWSYM.2017.8058970",
language = "English",
isbn = "978-1-5090-6361-1",
pages = "172--175",
booktitle = "2017 IEEE MTT-S International Microwave Symposium, IMS 2017",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
address = "United States",

}

Varonen, M, Samoska, L, Kangaslahti, P, Fung, A, Gawande, R, Soria, M, Peralta, A, Lin, R, Lai, R, Mei, X & Sarkozy, S 2017, Cryogenic MMIC Low-Noise Amplifiers for V-band. in 2017 IEEE MTT-S International Microwave Symposium, IMS 2017., 8058970, Institute of Electrical and Electronic Engineers IEEE, pp. 172-175, 2017 IEEE MTT-S International Microwave Symposium, IMS 2017, Honolulu, United States, 4/06/17. https://doi.org/10.1109/MWSYM.2017.8058970

Cryogenic MMIC Low-Noise Amplifiers for V-band. / Varonen, Mikko; Samoska, Lorene; Kangaslahti, Pekka; Fung, Andy; Gawande, Rohit; Soria, Mary; Peralta, Alejandro; Lin, Robert; Lai, Richard; Mei, Xiaobing; Sarkozy, Stephen.

2017 IEEE MTT-S International Microwave Symposium, IMS 2017. Institute of Electrical and Electronic Engineers IEEE, 2017. p. 172-175 8058970.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Cryogenic MMIC Low-Noise Amplifiers for V-band

AU - Varonen, Mikko

AU - Samoska, Lorene

AU - Kangaslahti, Pekka

AU - Fung, Andy

AU - Gawande, Rohit

AU - Soria, Mary

AU - Peralta, Alejandro

AU - Lin, Robert

AU - Lai, Richard

AU - Mei, Xiaobing

AU - Sarkozy, Stephen

N1 - Project: 109268

PY - 2017/10/4

Y1 - 2017/10/4

N2 - In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

AB - In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

KW - cryogenic

KW - InP HEMT

KW - low-noise amplifiers

KW - MMIC

UR - http://www.scopus.com/inward/record.url?scp=85032499064&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2017.8058970

DO - 10.1109/MWSYM.2017.8058970

M3 - Conference article in proceedings

SN - 978-1-5090-6361-1

SP - 172

EP - 175

BT - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017

PB - Institute of Electrical and Electronic Engineers IEEE

ER -

Varonen M, Samoska L, Kangaslahti P, Fung A, Gawande R, Soria M et al. Cryogenic MMIC Low-Noise Amplifiers for V-band. In 2017 IEEE MTT-S International Microwave Symposium, IMS 2017. Institute of Electrical and Electronic Engineers IEEE. 2017. p. 172-175. 8058970 https://doi.org/10.1109/MWSYM.2017.8058970