Cryogenic MMIC Low-Noise Amplifiers for V-band

Mikko Varonen, Lorene Samoska, Pekka Kangaslahti, Andy Fung, Rohit Gawande, Mary Soria, Alejandro Peralta, Robert Lin, Richard Lai, Xiaobing Mei, Stephen Sarkozy

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    6 Citations (Scopus)


    In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.
    Original languageEnglish
    Title of host publication2017 IEEE MTT-S International Microwave Symposium, IMS 2017
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Electronic)978-1-5090-6360-4
    ISBN (Print)978-1-5090-6361-1
    Publication statusPublished - 4 Oct 2017
    MoE publication typeA4 Article in a conference publication
    Event2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honolulu, United States
    Duration: 4 Jun 20179 Jun 2017


    Conference2017 IEEE MTT-S International Microwave Symposium, IMS 2017
    Abbreviated titleIMS 2017
    Country/TerritoryUnited States


    • cryogenic
    • InP HEMT
    • low-noise amplifiers
    • MMIC
    • OtaNano


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