Cryogenic MMIC Low-Noise Amplifiers for V-band

Mikko Varonen; Lorene Samoska; Pekka Kangaslahti; Andy Fung; Rohit Gawande; Mary Soria; Alejandro Peralta; Robert Lin; Richard Lai; Xiaobing Mei; Stephen Sarkozy

doi:10.1109/MWSYM.2017.8058970

Cryogenic MMIC Low-Noise Amplifiers for V-band

Mikko Varonen, Lorene Samoska, Pekka Kangaslahti, Andy Fung, Rohit Gawande, Mary Soria, Alejandro Peralta, Robert Lin, Richard Lai, Xiaobing Mei, Stephen Sarkozy

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

6 Citations (Scopus)

Abstract

In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

Original language	English
Title of host publication	2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	172-175
ISBN (Electronic)	978-1-5090-6360-4
ISBN (Print)	978-1-5090-6361-1
DOIs	https://doi.org/10.1109/MWSYM.2017.8058970
Publication status	Published - 4 Oct 2017
MoE publication type	A4 Article in a conference publication
Event	2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honolulu, United States Duration: 4 Jun 2017 → 9 Jun 2017

Conference

Conference	2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Abbreviated title	IMS 2017
Country/Territory	United States
City	Honolulu
Period	4/06/17 → 9/06/17

Funding

This work was carried out in part at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration. The work of M. Varonen was supported by the Academy of Finland and Tekes - Finnish Funding Agency for Innovation through the 5WAVE project.

Keywords

cryogenic
InP HEMT
low-noise amplifiers
MMIC
OtaNano

Access to Document

10.1109/MWSYM.2017.8058970

Cite this

Varonen, M., Samoska, L., Kangaslahti, P., Fung, A., Gawande, R., Soria, M., Peralta, A., Lin, R., Lai, R., Mei, X., & Sarkozy, S. (2017). Cryogenic MMIC Low-Noise Amplifiers for V-band. In 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 (pp. 172-175). Article 8058970 IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/MWSYM.2017.8058970

@inproceedings{24fb061d101e4eee8e576d1c3dbec3c3,

title = "Cryogenic MMIC Low-Noise Amplifiers for V-band",

abstract = "In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.",

keywords = "cryogenic, InP HEMT, low-noise amplifiers, MMIC, OtaNano",

author = "Mikko Varonen and Lorene Samoska and Pekka Kangaslahti and Andy Fung and Rohit Gawande and Mary Soria and Alejandro Peralta and Robert Lin and Richard Lai and Xiaobing Mei and Stephen Sarkozy",

note = "Project: 109268 ; 2017 IEEE MTT-S International Microwave Symposium, IMS 2017, IMS 2017 ; Conference date: 04-06-2017 Through 09-06-2017",

year = "2017",

month = oct,

day = "4",

doi = "10.1109/MWSYM.2017.8058970",

language = "English",

isbn = "978-1-5090-6361-1",

pages = "172--175",

booktitle = "2017 IEEE MTT-S International Microwave Symposium, IMS 2017",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Varonen, M, Samoska, L, Kangaslahti, P, Fung, A, Gawande, R, Soria, M, Peralta, A, Lin, R, Lai, R, Mei, X & Sarkozy, S 2017, Cryogenic MMIC Low-Noise Amplifiers for V-band. in 2017 IEEE MTT-S International Microwave Symposium, IMS 2017., 8058970, IEEE Institute of Electrical and Electronic Engineers, pp. 172-175, 2017 IEEE MTT-S International Microwave Symposium, IMS 2017, Honolulu, Hawaii, United States, 4/06/17. https://doi.org/10.1109/MWSYM.2017.8058970

Cryogenic MMIC Low-Noise Amplifiers for V-band. / Varonen, Mikko; Samoska, Lorene; Kangaslahti, Pekka et al.
2017 IEEE MTT-S International Microwave Symposium, IMS 2017. IEEE Institute of Electrical and Electronic Engineers, 2017. p. 172-175 8058970.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Cryogenic MMIC Low-Noise Amplifiers for V-band

AU - Varonen, Mikko

AU - Samoska, Lorene

AU - Kangaslahti, Pekka

AU - Fung, Andy

AU - Gawande, Rohit

AU - Soria, Mary

AU - Peralta, Alejandro

AU - Lin, Robert

AU - Lai, Richard

AU - Mei, Xiaobing

AU - Sarkozy, Stephen

N1 - Project: 109268

PY - 2017/10/4

Y1 - 2017/10/4

N2 - In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

AB - In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

KW - cryogenic

KW - InP HEMT

KW - low-noise amplifiers

KW - MMIC

KW - OtaNano

UR - http://www.scopus.com/inward/record.url?scp=85032499064&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2017.8058970

DO - 10.1109/MWSYM.2017.8058970

M3 - Conference article in proceedings

SN - 978-1-5090-6361-1

SP - 172

EP - 175

BT - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017

Y2 - 4 June 2017 through 9 June 2017

ER -

Cryogenic MMIC Low-Noise Amplifiers for V-band

Abstract

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Cryogenic MMIC Low-Noise Amplifiers for V-band

Abstract

Conference

Funding

Keywords

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OtaNano

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