Cryogenic MMIC Low-Noise Amplifiers for V-band

Mikko Varonen, Lorene Samoska, Pekka Kangaslahti, Andy Fung, Rohit Gawande, Mary Soria, Alejandro Peralta, Robert Lin, Richard Lai, Xiaobing Mei, Stephen Sarkozy

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    4 Citations (Scopus)

    Abstract

    In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.
    Original languageEnglish
    Title of host publication2017 IEEE MTT-S International Microwave Symposium, IMS 2017
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages172-175
    Number of pages4
    ISBN (Electronic)978-1-5090-6360-4
    ISBN (Print)978-1-5090-6361-1
    DOIs
    Publication statusPublished - 4 Oct 2017
    MoE publication typeA4 Article in a conference publication
    Event2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honolulu, United States
    Duration: 4 Jun 20179 Jun 2017

    Conference

    Conference2017 IEEE MTT-S International Microwave Symposium, IMS 2017
    Abbreviated titleIMS 2017
    CountryUnited States
    CityHonolulu
    Period4/06/179/06/17

    Fingerprint

    Low noise amplifiers
    Monolithic microwave integrated circuits
    extremely high frequencies
    noise temperature
    Cryogenics
    low noise
    cryogenics
    amplifiers
    modules
    Waveguides
    Temperature
    receivers
    waveguides
    High electron mobility transistors
    Mylar (trademark)
    high electron mobility transistors
    Alumina
    Vacuum
    cascades
    aluminum oxides

    Keywords

    • cryogenic
    • InP HEMT
    • low-noise amplifiers
    • MMIC

    Cite this

    Varonen, M., Samoska, L., Kangaslahti, P., Fung, A., Gawande, R., Soria, M., ... Sarkozy, S. (2017). Cryogenic MMIC Low-Noise Amplifiers for V-band. In 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 (pp. 172-175). [8058970] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/MWSYM.2017.8058970
    Varonen, Mikko ; Samoska, Lorene ; Kangaslahti, Pekka ; Fung, Andy ; Gawande, Rohit ; Soria, Mary ; Peralta, Alejandro ; Lin, Robert ; Lai, Richard ; Mei, Xiaobing ; Sarkozy, Stephen. / Cryogenic MMIC Low-Noise Amplifiers for V-band. 2017 IEEE MTT-S International Microwave Symposium, IMS 2017. IEEE Institute of Electrical and Electronic Engineers , 2017. pp. 172-175
    @inproceedings{24fb061d101e4eee8e576d1c3dbec3c3,
    title = "Cryogenic MMIC Low-Noise Amplifiers for V-band",
    abstract = "In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.",
    keywords = "cryogenic, InP HEMT, low-noise amplifiers, MMIC",
    author = "Mikko Varonen and Lorene Samoska and Pekka Kangaslahti and Andy Fung and Rohit Gawande and Mary Soria and Alejandro Peralta and Robert Lin and Richard Lai and Xiaobing Mei and Stephen Sarkozy",
    note = "Project: 109268",
    year = "2017",
    month = "10",
    day = "4",
    doi = "10.1109/MWSYM.2017.8058970",
    language = "English",
    isbn = "978-1-5090-6361-1",
    pages = "172--175",
    booktitle = "2017 IEEE MTT-S International Microwave Symposium, IMS 2017",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Varonen, M, Samoska, L, Kangaslahti, P, Fung, A, Gawande, R, Soria, M, Peralta, A, Lin, R, Lai, R, Mei, X & Sarkozy, S 2017, Cryogenic MMIC Low-Noise Amplifiers for V-band. in 2017 IEEE MTT-S International Microwave Symposium, IMS 2017., 8058970, IEEE Institute of Electrical and Electronic Engineers , pp. 172-175, 2017 IEEE MTT-S International Microwave Symposium, IMS 2017, Honolulu, United States, 4/06/17. https://doi.org/10.1109/MWSYM.2017.8058970

    Cryogenic MMIC Low-Noise Amplifiers for V-band. / Varonen, Mikko; Samoska, Lorene; Kangaslahti, Pekka; Fung, Andy; Gawande, Rohit; Soria, Mary; Peralta, Alejandro; Lin, Robert; Lai, Richard; Mei, Xiaobing; Sarkozy, Stephen.

    2017 IEEE MTT-S International Microwave Symposium, IMS 2017. IEEE Institute of Electrical and Electronic Engineers , 2017. p. 172-175 8058970.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Cryogenic MMIC Low-Noise Amplifiers for V-band

    AU - Varonen, Mikko

    AU - Samoska, Lorene

    AU - Kangaslahti, Pekka

    AU - Fung, Andy

    AU - Gawande, Rohit

    AU - Soria, Mary

    AU - Peralta, Alejandro

    AU - Lin, Robert

    AU - Lai, Richard

    AU - Mei, Xiaobing

    AU - Sarkozy, Stephen

    N1 - Project: 109268

    PY - 2017/10/4

    Y1 - 2017/10/4

    N2 - In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

    AB - In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

    KW - cryogenic

    KW - InP HEMT

    KW - low-noise amplifiers

    KW - MMIC

    UR - http://www.scopus.com/inward/record.url?scp=85032499064&partnerID=8YFLogxK

    U2 - 10.1109/MWSYM.2017.8058970

    DO - 10.1109/MWSYM.2017.8058970

    M3 - Conference article in proceedings

    SN - 978-1-5090-6361-1

    SP - 172

    EP - 175

    BT - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Varonen M, Samoska L, Kangaslahti P, Fung A, Gawande R, Soria M et al. Cryogenic MMIC Low-Noise Amplifiers for V-band. In 2017 IEEE MTT-S International Microwave Symposium, IMS 2017. IEEE Institute of Electrical and Electronic Engineers . 2017. p. 172-175. 8058970 https://doi.org/10.1109/MWSYM.2017.8058970