Cryogenic on-wafer measurements at W-band and at 20-295 K

Tauno Vähä-Heikkilä, Jussi Varis, Hannu Hakojärvi, Jussi Tuovinen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

A cryogenic on-wafer measurement system has been developed for 75-110 GHz frequencies (W-band). On-wafer S-parameter measurements of passive and active devices can be carried out with the set-up. S-parameter measurements can be done as a function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements at W-band, measured S-parameters of an InP HEMT are presented with temperatures of 20, 80, 160, and 295 K.
Original languageEnglish
Title of host publicationProceedings of 3rd ESA Workshop On Millimetre Wave Technology and Applications
Subtitle of host publicationCircuits, systems, and measurement techniques
EditorsJ. Mallat, A. Räisänen, J. Tuovinen
PublisherEuropean Space Agency ESA
Pages435-439
Publication statusPublished - 2003
MoE publication typeA4 Article in a conference publication
Event3rd ESA Workshop On Millimetre Wave Technology and Applications: Circuits, systems and measurement techniques - MilliLab, Espoo, Finland
Duration: 21 May 200323 May 2003

Publication series

SeriesESA Conference Proceedings
Volume212
ISSN1022-6656

Conference

Conference3rd ESA Workshop On Millimetre Wave Technology and Applications
CountryFinland
CityEspoo
Period21/05/0323/05/03

Keywords

  • cryogenic characterization
  • on-wafer measurements

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    Vähä-Heikkilä, T., Varis, J., Hakojärvi, H., & Tuovinen, J. (2003). Cryogenic on-wafer measurements at W-band and at 20-295 K. In J. Mallat, A. Räisänen, & J. Tuovinen (Eds.), Proceedings of 3rd ESA Workshop On Millimetre Wave Technology and Applications: Circuits, systems, and measurement techniques (pp. 435-439). European Space Agency ESA. ESA Conference Proceedings, Vol.. 212