Cryogenic on-wafer measurements at W-band and at 20-295 K

Tauno Vähä-Heikkilä; Jussi Varis; Hannu Hakojärvi; Jussi Tuovinen

Cryogenic on-wafer measurements at W-band and at 20-295 K

Tauno Vähä-Heikkilä, Jussi Varis, Hannu Hakojärvi, Jussi Tuovinen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

A cryogenic on-wafer measurement system has been developed for 75-110 GHz frequencies (W-band). On-wafer S-parameter measurements of passive and active devices can be carried out with the set-up. S-parameter measurements can be done as a function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements at W-band, measured S-parameters of an InP HEMT are presented with temperatures of 20, 80, 160, and 295 K.

Original language	English
Title of host publication	Proceedings of 3rd ESA Workshop On Millimetre Wave Technology and Applications
Subtitle of host publication	Circuits, systems, and measurement techniques
Editors	J. Mallat, A. Räisänen, J. Tuovinen
Publisher	European Space Agency (ESA)
Pages	435-439
Publication status	Published - 2003
MoE publication type	A4 Article in a conference publication
Event	3rd ESA Workshop On Millimetre Wave Technology and Applications: Circuits, systems and measurement techniques - MilliLab, Espoo, Finland Duration: 21 May 2003 → 23 May 2003

Publication series

Series	ESA Conference Proceedings
Volume	212
ISSN	1022-6656

Conference

Conference	3rd ESA Workshop On Millimetre Wave Technology and Applications
Country/Territory	Finland
City	Espoo
Period	21/05/03 → 23/05/03

Keywords

cryogenic characterization
on-wafer measurements

Cite this

Vähä-Heikkilä, Tauno ; Varis, Jussi ; Hakojärvi, Hannu et al. / Cryogenic on-wafer measurements at W-band and at 20-295 K. Proceedings of 3rd ESA Workshop On Millimetre Wave Technology and Applications: Circuits, systems, and measurement techniques. editor / J. Mallat ; A. Räisänen ; J. Tuovinen. European Space Agency (ESA), 2003. pp. 435-439 (ESA Conference Proceedings, Vol. 212).

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title = "Cryogenic on-wafer measurements at W-band and at 20-295 K",

abstract = "A cryogenic on-wafer measurement system has been developed for 75-110 GHz frequencies (W-band). On-wafer S-parameter measurements of passive and active devices can be carried out with the set-up. S-parameter measurements can be done as a function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements at W-band, measured S-parameters of an InP HEMT are presented with temperatures of 20, 80, 160, and 295 K.",

keywords = "cryogenic characterization, on-wafer measurements",

author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Jussi Varis and Hannu Hakoj{\"a}rvi and Jussi Tuovinen",

year = "2003",

language = "English",

series = "ESA Conference Proceedings",

publisher = "European Space Agency (ESA)",

pages = "435--439",

editor = "J. Mallat and A. R{\"a}is{\"a}nen and J. Tuovinen",

booktitle = "Proceedings of 3rd ESA Workshop On Millimetre Wave Technology and Applications",

address = "France",

note = "3rd ESA Workshop On Millimetre Wave Technology and Applications : Circuits, systems and measurement techniques ; Conference date: 21-05-2003 Through 23-05-2003",

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Vähä-Heikkilä, T , Varis, J, Hakojärvi, H & Tuovinen, J 2003, Cryogenic on-wafer measurements at W-band and at 20-295 K. in J Mallat, A Räisänen & J Tuovinen (eds), Proceedings of 3rd ESA Workshop On Millimetre Wave Technology and Applications: Circuits, systems, and measurement techniques. European Space Agency (ESA), ESA Conference Proceedings, vol. 212, pp. 435-439, 3rd ESA Workshop On Millimetre Wave Technology and Applications, Espoo, Finland, 21/05/03.

Cryogenic on-wafer measurements at W-band and at 20-295 K. / Vähä-Heikkilä, Tauno ; Varis, Jussi; Hakojärvi, Hannu et al.
Proceedings of 3rd ESA Workshop On Millimetre Wave Technology and Applications: Circuits, systems, and measurement techniques. ed. / J. Mallat; A. Räisänen; J. Tuovinen. European Space Agency (ESA), 2003. p. 435-439 (ESA Conference Proceedings, Vol. 212).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Cryogenic on-wafer measurements at W-band and at 20-295 K

AU - Vähä-Heikkilä, Tauno

AU - Varis, Jussi

AU - Hakojärvi, Hannu

AU - Tuovinen, Jussi

PY - 2003

Y1 - 2003

N2 - A cryogenic on-wafer measurement system has been developed for 75-110 GHz frequencies (W-band). On-wafer S-parameter measurements of passive and active devices can be carried out with the set-up. S-parameter measurements can be done as a function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements at W-band, measured S-parameters of an InP HEMT are presented with temperatures of 20, 80, 160, and 295 K.

AB - A cryogenic on-wafer measurement system has been developed for 75-110 GHz frequencies (W-band). On-wafer S-parameter measurements of passive and active devices can be carried out with the set-up. S-parameter measurements can be done as a function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements at W-band, measured S-parameters of an InP HEMT are presented with temperatures of 20, 80, 160, and 295 K.

KW - cryogenic characterization

KW - on-wafer measurements

M3 - Conference article in proceedings

T3 - ESA Conference Proceedings

SP - 435

EP - 439

BT - Proceedings of 3rd ESA Workshop On Millimetre Wave Technology and Applications

A2 - Mallat, J.

A2 - Räisänen, A.

A2 - Tuovinen, J.

PB - European Space Agency (ESA)

T2 - 3rd ESA Workshop On Millimetre Wave Technology and Applications

Y2 - 21 May 2003 through 23 May 2003

ER -

Vähä-Heikkilä T , Varis J, Hakojärvi H, Tuovinen J. Cryogenic on-wafer measurements at W-band and at 20-295 K. In Mallat J, Räisänen A, Tuovinen J, editors, Proceedings of 3rd ESA Workshop On Millimetre Wave Technology and Applications: Circuits, systems, and measurement techniques. European Space Agency (ESA). 2003. p. 435-439. (ESA Conference Proceedings, Vol. 212).

Cryogenic on-wafer measurements at W-band and at 20-295 K

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