A cryogenic on-wafer measurement system has been developed for 75-110 GHz frequencies (W-band). On-wafer S-parameter measurements of passive and active devices can be carried out with the set-up. S-parameter measurements can be done as a function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements at W-band, measured S-parameters of an InP HEMT are presented with temperatures of 20, 80, 160, and 295 K.
|Series||ESA Conference Proceedings|
|Conference||3rd ESA Workshop On Millimetre Wave Technology and Applications|
|Period||21/05/03 → 23/05/03|
- cryogenic characterization
- on-wafer measurements