Cryogenic W-Band SiGe BiCMOS low-noise amplifier

Mikko Varonen; Nima Sheikhipoor; Bekari Gabritchidze; Kieran Cleary; Henrik Forsten; Holger Rucker; Mehmet Kaynak

doi:10.1109/IMS30576.2020.9223922

Cryogenic W-Band SiGe BiCMOS low-noise amplifier

Mikko Varonen^*, Nima Sheikhipoor, Bekari Gabritchidze, Kieran Cleary, Henrik Forsten, Holger Rucker, Mehmet Kaynak

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

9 Citations (Scopus)

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Abstract

In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz. When cryogenically cooled to 20 K and measured on wafer the SiGe amplifier shows 95-116-K noise temperature from 77 to 116 GHz. This means 6 to 7 times improvement in noise temperature compared to room temperature noise. The measured gain is around 20 dB for frequency range of 71 to 116 GHz with unprecedented low power consumption of 2.8 mW. To the best of authors' knowledge, this is the highest frequency cryogenic SiGe low-noise amplifier and lowest noise performance for silicon amplifiers for W-band renorted to date.

Original language	English
Title of host publication	IMS 2020
Subtitle of host publication	2020 IEEE/MTT-S International Microwave Symposium
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	185-188
ISBN (Electronic)	978-1-7281-6815-9
ISBN (Print)	978-1-7281-6816-6
DOIs	https://doi.org/10.1109/IMS30576.2020.9223922
Publication status	Published - Aug 2020
MoE publication type	A4 Article in a conference publication
Event	2020 IEEE/MTT-S International Microwave Symposium, IMS 2020: Online - Virtual, Los Angeles, United States Duration: 4 Aug 2020 → 6 Aug 2020

Publication series

Series	IEEE MTT-S International Microwave Symposium
Volume	2020-August
ISSN	0149-645X

Conference

Conference	2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Abbreviated title	IMS 2020
Country/Territory	United States
City	Los Angeles
Period	4/08/20 → 6/08/20

Keywords

BiCMOS integrated circuits
Cryogenics
Heterojunction bipolar transistors (HBT)
Low-noise amplifiers (LNA)
MMICs
Silicon germanium (SiGe)

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10.1109/IMS30576.2020.9223922

Tu03B_2_Varonen_finalpaper_03_03_2020_05_02Accepted author manuscript, 678 KB

Cite this

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title = "Cryogenic W-Band SiGe BiCMOS low-noise amplifier",

abstract = "In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz. When cryogenically cooled to 20 K and measured on wafer the SiGe amplifier shows 95-116-K noise temperature from 77 to 116 GHz. This means 6 to 7 times improvement in noise temperature compared to room temperature noise. The measured gain is around 20 dB for frequency range of 71 to 116 GHz with unprecedented low power consumption of 2.8 mW. To the best of authors' knowledge, this is the highest frequency cryogenic SiGe low-noise amplifier and lowest noise performance for silicon amplifiers for W-band renorted to date.",

keywords = "BiCMOS integrated circuits, Cryogenics, Heterojunction bipolar transistors (HBT), Low-noise amplifiers (LNA), MMICs, Silicon germanium (SiGe)",

author = "Mikko Varonen and Nima Sheikhipoor and Bekari Gabritchidze and Kieran Cleary and Henrik Forsten and Holger Rucker and Mehmet Kaynak",

note = "Funding Information: ACKNOWLEDGMENT This work was supported through the Academy of Finland under projects MIDERI, HISENS, and MilliRad (decision no 310234, 310879, and 314541, respectively).; 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 : Online, IMS 2020 ; Conference date: 04-08-2020 Through 06-08-2020",

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Varonen, M, Sheikhipoor, N, Gabritchidze, B, Cleary, K, Forsten, H, Rucker, H & Kaynak, M 2020, Cryogenic W-Band SiGe BiCMOS low-noise amplifier. in IMS 2020: 2020 IEEE/MTT-S International Microwave Symposium., 9223922, IEEE Institute of Electrical and Electronic Engineers, IEEE MTT-S International Microwave Symposium, vol. 2020-August, pp. 185-188, 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020, Los Angeles, California, United States, 4/08/20. https://doi.org/10.1109/IMS30576.2020.9223922

Cryogenic W-Band SiGe BiCMOS low-noise amplifier. / Varonen, Mikko; Sheikhipoor, Nima; Gabritchidze, Bekari et al.
IMS 2020: 2020 IEEE/MTT-S International Microwave Symposium. IEEE Institute of Electrical and Electronic Engineers, 2020. p. 185-188 9223922 (IEEE MTT-S International Microwave Symposium, Vol. 2020-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Varonen, Mikko

AU - Sheikhipoor, Nima

AU - Gabritchidze, Bekari

AU - Cleary, Kieran

AU - Forsten, Henrik

AU - Rucker, Holger

AU - Kaynak, Mehmet

N1 - Funding Information: ACKNOWLEDGMENT This work was supported through the Academy of Finland under projects MIDERI, HISENS, and MilliRad (decision no 310234, 310879, and 314541, respectively).

PY - 2020/8

Y1 - 2020/8

N2 - In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz. When cryogenically cooled to 20 K and measured on wafer the SiGe amplifier shows 95-116-K noise temperature from 77 to 116 GHz. This means 6 to 7 times improvement in noise temperature compared to room temperature noise. The measured gain is around 20 dB for frequency range of 71 to 116 GHz with unprecedented low power consumption of 2.8 mW. To the best of authors' knowledge, this is the highest frequency cryogenic SiGe low-noise amplifier and lowest noise performance for silicon amplifiers for W-band renorted to date.

AB - In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz. When cryogenically cooled to 20 K and measured on wafer the SiGe amplifier shows 95-116-K noise temperature from 77 to 116 GHz. This means 6 to 7 times improvement in noise temperature compared to room temperature noise. The measured gain is around 20 dB for frequency range of 71 to 116 GHz with unprecedented low power consumption of 2.8 mW. To the best of authors' knowledge, this is the highest frequency cryogenic SiGe low-noise amplifier and lowest noise performance for silicon amplifiers for W-band renorted to date.

KW - BiCMOS integrated circuits

KW - Cryogenics

KW - Heterojunction bipolar transistors (HBT)

KW - Low-noise amplifiers (LNA)

KW - MMICs

KW - Silicon germanium (SiGe)

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T3 - IEEE MTT-S International Microwave Symposium

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BT - IMS 2020

PB - IEEE Institute of Electrical and Electronic Engineers

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Y2 - 4 August 2020 through 6 August 2020

ER -

Varonen M, Sheikhipoor N, Gabritchidze B, Cleary K, Forsten H, Rucker H et al. Cryogenic W-Band SiGe BiCMOS low-noise amplifier. In IMS 2020: 2020 IEEE/MTT-S International Microwave Symposium. IEEE Institute of Electrical and Electronic Engineers. 2020. p. 185-188. 9223922. (IEEE MTT-S International Microwave Symposium, Vol. 2020-August). doi: 10.1109/IMS30576.2020.9223922

Cryogenic W-Band SiGe BiCMOS low-noise amplifier

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