Cryogenic W-Band SiGe BiCMOS low-noise amplifier

Mikko Varonen, Nima Sheikhipoor, Bekari Gabritchidze, Kieran Cleary, Henrik Forsten, Holger Rucker, Mehmet Kaynak

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    7 Citations (Scopus)
    142 Downloads (Pure)


    In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz. When cryogenically cooled to 20 K and measured on wafer the SiGe amplifier shows 95-116-K noise temperature from 77 to 116 GHz. This means 6 to 7 times improvement in noise temperature compared to room temperature noise. The measured gain is around 20 dB for frequency range of 71 to 116 GHz with unprecedented low power consumption of 2.8 mW. To the best of authors' knowledge, this is the highest frequency cryogenic SiGe low-noise amplifier and lowest noise performance for silicon amplifiers for W-band renorted to date.
    Original languageEnglish
    Title of host publicationIMS 2020
    Subtitle of host publication2020 IEEE/MTT-S International Microwave Symposium
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Electronic)978-1-7281-6815-9
    ISBN (Print)978-1-7281-6816-6
    Publication statusPublished - Aug 2020
    MoE publication typeA4 Article in a conference publication
    Event2020 IEEE/MTT-S International Microwave Symposium, IMS 2020: Online - Virtual, Los Angeles, United States
    Duration: 4 Aug 20206 Aug 2020

    Publication series

    SeriesIEEE MTT-S International Microwave Symposium


    Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
    Abbreviated titleIMS 2020
    Country/TerritoryUnited States
    CityLos Angeles


    • BiCMOS integrated circuits
    • Cryogenics
    • Heterojunction bipolar transistors (HBT)
    • Low-noise amplifiers (LNA)
    • MMICs
    • Silicon germanium (SiGe)


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