TY - GEN
T1 - Cryogenic W-Band SiGe BiCMOS low-noise amplifier
AU - Varonen, Mikko
AU - Sheikhipoor, Nima
AU - Gabritchidze, Bekari
AU - Cleary, Kieran
AU - Forsten, Henrik
AU - Rucker, Holger
AU - Kaynak, Mehmet
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported through the Academy of Finland under projects MIDERI, HISENS, and MilliRad (decision no 310234, 310879, and 314541, respectively).
PY - 2020/8
Y1 - 2020/8
N2 - In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz. When cryogenically cooled to 20 K and measured on wafer the SiGe amplifier shows 95-116-K noise temperature from 77 to 116 GHz. This means 6 to 7 times improvement in noise temperature compared to room temperature noise. The measured gain is around 20 dB for frequency range of 71 to 116 GHz with unprecedented low power consumption of 2.8 mW. To the best of authors' knowledge, this is the highest frequency cryogenic SiGe low-noise amplifier and lowest noise performance for silicon amplifiers for W-band renorted to date.
AB - In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz. When cryogenically cooled to 20 K and measured on wafer the SiGe amplifier shows 95-116-K noise temperature from 77 to 116 GHz. This means 6 to 7 times improvement in noise temperature compared to room temperature noise. The measured gain is around 20 dB for frequency range of 71 to 116 GHz with unprecedented low power consumption of 2.8 mW. To the best of authors' knowledge, this is the highest frequency cryogenic SiGe low-noise amplifier and lowest noise performance for silicon amplifiers for W-band renorted to date.
KW - BiCMOS integrated circuits
KW - Cryogenics
KW - Heterojunction bipolar transistors (HBT)
KW - Low-noise amplifiers (LNA)
KW - MMICs
KW - Silicon germanium (SiGe)
UR - http://www.scopus.com/inward/record.url?scp=85094193560&partnerID=8YFLogxK
U2 - 10.1109/IMS30576.2020.9223922
DO - 10.1109/IMS30576.2020.9223922
M3 - Conference article in proceedings
AN - SCOPUS:85094193560
SN - 978-1-7281-6816-6
T3 - IEEE MTT-S International Microwave Symposium
SP - 185
EP - 188
BT - IMS 2020
PB - IEEE Institute of Electrical and Electronic Engineers
T2 - 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Y2 - 4 August 2020 through 6 August 2020
ER -