Cryogenic W-Band SiGe BiCMOS low-noise amplifier

Mikko Varonen, Nima Sheikhipoor, Bekari Gabritchidze, Kieran Cleary, Henrik Forsten, Holger Rucker, Mehmet Kaynak

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

5 Citations (Scopus)
47 Downloads (Pure)


In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz. When cryogenically cooled to 20 K and measured on wafer the SiGe amplifier shows 95-116-K noise temperature from 77 to 116 GHz. This means 6 to 7 times improvement in noise temperature compared to room temperature noise. The measured gain is around 20 dB for frequency range of 71 to 116 GHz with unprecedented low power consumption of 2.8 mW. To the best of authors' knowledge, this is the highest frequency cryogenic SiGe low-noise amplifier and lowest noise performance for silicon amplifiers for W-band renorted to date.
Original languageEnglish
Title of host publicationIMS 2020
Subtitle of host publication2020 IEEE/MTT-S International Microwave Symposium
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Electronic)978-1-7281-6815-9
ISBN (Print)978-1-7281-6816-6
Publication statusPublished - Aug 2020
MoE publication typeA4 Article in a conference publication
Event2020 IEEE/MTT-S International Microwave Symposium, IMS 2020: Online - Virtual, Los Angeles, United States
Duration: 4 Aug 20206 Aug 2020

Publication series

SeriesIEEE MTT-S International Microwave Symposium


Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Abbreviated titleIMS 2020
Country/TerritoryUnited States
CityLos Angeles


  • BiCMOS integrated circuits
  • Cryogenics
  • Heterojunction bipolar transistors (HBT)
  • Low-noise amplifiers (LNA)
  • MMICs
  • Silicon germanium (SiGe)


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