Current crowding and misaligment effects as sources of error in contact resistivity measurements: Part II. Experimental results and computer simulation of self-aligned test structures

Paolo Cappelletti, Manuela Finetti, Andrea Scorzoni, Ilkka Suni, Nadia Circelli, Libera Giovanna Dalla

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)

Abstract

In this work we show that an accurate and straightforward extraction of the contact resistivity from contact resistance data can be achieved using properly designed self-aligned test patterns. In this way, the parasitic effects are minimized and the contact resistivity can be derived using simple one-dimensional models as confirmed by our computer simulation. Experimental results obtained in self-aligned structures are presented for Al/CoSi 2/n+ Si and Al-Si/n+ Si contacts.
Original languageEnglish
Pages (from-to)532-536
JournalIEEE Transactions on Electron Devices
Volume34
Issue number3
DOIs
Publication statusPublished - 1987
MoE publication typeA1 Journal article-refereed

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