Current crowding and misaligment effects as sources of error in contact resistivity measurements: Part II. Experimental results and computer simulation of self-aligned test structures

In this work we show that an accurate and straightforward extraction of the contact resistivity from contact resistance data can be achieved using properly designed self-aligned test patterns. In this way, the parasitic effects are minimized and the contact resistivity can be derived using simple one-dimensional models as confirmed by our computer simulation. Experimental results obtained in self-aligned structures are presented for Al/CoSi 2/n⁺ Si and Al-Si/n⁺ Si contacts.