Current modulation of a hygroscopic insulator organic field-effect transistor

Tomas G Bäcklund; Henrik G O Sandberg; R. Österbacka; Henrik Stubb

doi:10.1063/1.1811798

Current modulation of a hygroscopic insulator organic field-effect transistor

Tomas G Bäcklund (Corresponding Author), Henrik G O Sandberg, R. Österbacka, Henrik Stubb

Åbo Akademi University

Research output: Contribution to journal › Article › Scientific › peer-review

39 Citations (Scopus)

Abstract

We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.

Original language	English
Pages (from-to)	3887 - 3889
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	17
DOIs	https://doi.org/10.1063/1.1811798
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

Keywords

insulated gate field effect transistors
electrical conductivity transitions
polymers

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10.1063/1.1811798

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abstract = "We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.",

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AU - Österbacka, R.

AU - Stubb, Henrik

PY - 2004

Y1 - 2004

N2 - We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.

AB - We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.

KW - insulated gate field effect transistors

KW - electrical conductivity transitions

KW - polymers

U2 - 10.1063/1.1811798

DO - 10.1063/1.1811798

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JO - Applied Physics Letters

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Current modulation of a hygroscopic insulator organic field-effect transistor

Abstract

Keywords

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