Current modulation of a hygroscopic insulator organic field-effect transistor

Tomas G Bäcklund (Corresponding Author), Henrik G O Sandberg, R. Österbacka, Henrik Stubb

Research output: Contribution to journalArticleScientificpeer-review

32 Citations (Scopus)

Abstract

We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.
Original languageEnglish
Pages (from-to)3887 - 3889
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number17
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

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field effect transistors
insulators
modulation
transistors
ions
atmospheres
conductivity
oxidation
air
polymers
electric potential

Keywords

  • insulated gate field effect transistors
  • electrical conductivity transitions
  • polymers

Cite this

Bäcklund, Tomas G ; Sandberg, Henrik G O ; Österbacka, R. ; Stubb, Henrik. / Current modulation of a hygroscopic insulator organic field-effect transistor. In: Applied Physics Letters. 2004 ; Vol. 85, No. 17. pp. 3887 - 3889.
@article{69972af329b24f179b546462a81063a1,
title = "Current modulation of a hygroscopic insulator organic field-effect transistor",
abstract = "We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.",
keywords = "insulated gate field effect transistors, electrical conductivity transitions, polymers",
author = "Bäcklund, {Tomas G} and Sandberg, {Henrik G O} and R. {\"O}sterbacka and Henrik Stubb",
year = "2004",
doi = "10.1063/1.1811798",
language = "English",
volume = "85",
pages = "3887 -- 3889",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "17",

}

Current modulation of a hygroscopic insulator organic field-effect transistor. / Bäcklund, Tomas G (Corresponding Author); Sandberg, Henrik G O; Österbacka, R.; Stubb, Henrik.

In: Applied Physics Letters, Vol. 85, No. 17, 2004, p. 3887 - 3889.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Current modulation of a hygroscopic insulator organic field-effect transistor

AU - Bäcklund, Tomas G

AU - Sandberg, Henrik G O

AU - Österbacka, R.

AU - Stubb, Henrik

PY - 2004

Y1 - 2004

N2 - We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.

AB - We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.

KW - insulated gate field effect transistors

KW - electrical conductivity transitions

KW - polymers

U2 - 10.1063/1.1811798

DO - 10.1063/1.1811798

M3 - Article

VL - 85

SP - 3887

EP - 3889

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -