Current modulation of a hygroscopic insulator organic field-effect transistor

Tomas G. Bäcklund; Henrik G.O. Sandberg; R. Österbacka; Henrik Stubb

doi:10.1063/1.1811798

Current modulation of a hygroscopic insulator organic field-effect transistor

Tomas G. Bäcklund^*
, Henrik G.O. Sandberg
, R. Österbacka
, Henrik Stubb

^*Corresponding author for this work

BA6304 Flexible sensors and devices

Åbo Akademi University

Research output: Contribution to journal › Article › Scientific › peer-review

39 Citations (Scopus)

Abstract

We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.

Original language	English
Pages (from-to)	3887-3889
Journal	Applied Physics Letters
Volume	85
Issue number	17
DOIs	https://doi.org/10.1063/1.1811798
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

Keywords

insulated gate field effect transistors
electrical conductivity transitions
polymers

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10.1063/1.1811798

Cite this

@article{69972af329b24f179b546462a81063a1,

title = "Current modulation of a hygroscopic insulator organic field-effect transistor",

abstract = "We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.",

keywords = "insulated gate field effect transistors, electrical conductivity transitions, polymers",

author = "B{\"a}cklund, \{Tomas G.\} and Sandberg, \{Henrik G.O.\} and R. {\"O}sterbacka and Henrik Stubb",

year = "2004",

doi = "10.1063/1.1811798",

language = "English",

volume = "85",

pages = "3887--3889",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "17",

}

TY - JOUR

T1 - Current modulation of a hygroscopic insulator organic field-effect transistor

AU - Bäcklund, Tomas G.

AU - Sandberg, Henrik G.O.

AU - Österbacka, R.

AU - Stubb, Henrik

PY - 2004

Y1 - 2004

N2 - We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.

AB - We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On∕Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel.

KW - insulated gate field effect transistors

KW - electrical conductivity transitions

KW - polymers

U2 - 10.1063/1.1811798

DO - 10.1063/1.1811798

M3 - Article

SN - 0003-6951

VL - 85

SP - 3887

EP - 3889

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Current modulation of a hygroscopic insulator organic field-effect transistor

Abstract

Keywords

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