CVD growth of single-walled B-doped carbon nanotubes

P. Ayala (Corresponding Author), M. H. Rümmeli, T. Gemming, Esko I. Kauppinen, H. Kuzmany, T. Pichler

Research output: Contribution to journalArticleScientificpeer-review

20 Citations (Scopus)

Abstract

Chemical Vapor Deposition is a method widely used in the synthesis of carbon nanotubes of one and multiple walls. However, the interdependent parameters playing a role in this synthesis approach are scarcely explored when single‐walled doped carbon nanotubes are the aimed product. It is well known that one method of tailoring the electronic properties of single wall carbon nanotubes is the chemical modification through incorporation of heteroatoms within the tube walls. We describe here the feasibility to use chemical vapor deposition employing high vacuum conditions and a one liquid precursor acting as B and C feedstock simultaneously. TEM exhibits small nanotube bundles containing 3 to 5 tubes with a narrow diameter distribution in relation to nanotube material produced with this method (0.9 to 1.5 nm). The boron content was probed by x‐ray photoelectron spectroscopy as bulk probing method in samples with high nanotube yield.
Original languageEnglish
Pages (from-to)1935-1938
Number of pages4
JournalPhysica Status Solidi B: Basic Research
Volume245
Issue number10
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

Fingerprint

Carbon Nanotubes
Nanotubes
Chemical vapor deposition
Carbon nanotubes
nanotubes
carbon nanotubes
vapor deposition
tubes
Boron
Chemical modification
synthesis
Photoelectron spectroscopy
high vacuum
Electronic properties
Feedstocks
bundles
boron
photoelectron spectroscopy
Vacuum
Transmission electron microscopy

Keywords

  • 61.46.Fg
  • 68.37.Lp
  • 78.30.Na
  • 81.07.De
  • 81.15.Gh
  • 82.80.Pv

Cite this

Ayala, P., Rümmeli, M. H., Gemming, T., Kauppinen, E. I., Kuzmany, H., & Pichler, T. (2008). CVD growth of single-walled B-doped carbon nanotubes. Physica Status Solidi B: Basic Research, 245(10), 1935-1938. https://doi.org/10.1002/pssb.200879641
Ayala, P. ; Rümmeli, M. H. ; Gemming, T. ; Kauppinen, Esko I. ; Kuzmany, H. ; Pichler, T. / CVD growth of single-walled B-doped carbon nanotubes. In: Physica Status Solidi B: Basic Research. 2008 ; Vol. 245, No. 10. pp. 1935-1938.
@article{b2b26b3d415b45a28b9a73964acdf8c8,
title = "CVD growth of single-walled B-doped carbon nanotubes",
abstract = "Chemical Vapor Deposition is a method widely used in the synthesis of carbon nanotubes of one and multiple walls. However, the interdependent parameters playing a role in this synthesis approach are scarcely explored when single‐walled doped carbon nanotubes are the aimed product. It is well known that one method of tailoring the electronic properties of single wall carbon nanotubes is the chemical modification through incorporation of heteroatoms within the tube walls. We describe here the feasibility to use chemical vapor deposition employing high vacuum conditions and a one liquid precursor acting as B and C feedstock simultaneously. TEM exhibits small nanotube bundles containing 3 to 5 tubes with a narrow diameter distribution in relation to nanotube material produced with this method (0.9 to 1.5 nm). The boron content was probed by x‐ray photoelectron spectroscopy as bulk probing method in samples with high nanotube yield.",
keywords = "61.46.Fg, 68.37.Lp, 78.30.Na, 81.07.De, 81.15.Gh, 82.80.Pv",
author = "P. Ayala and R{\"u}mmeli, {M. H.} and T. Gemming and Kauppinen, {Esko I.} and H. Kuzmany and T. Pichler",
year = "2008",
doi = "10.1002/pssb.200879641",
language = "English",
volume = "245",
pages = "1935--1938",
journal = "Physica Status Solidi B: Basic Solid State Physics",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "10",

}

Ayala, P, Rümmeli, MH, Gemming, T, Kauppinen, EI, Kuzmany, H & Pichler, T 2008, 'CVD growth of single-walled B-doped carbon nanotubes', Physica Status Solidi B: Basic Research, vol. 245, no. 10, pp. 1935-1938. https://doi.org/10.1002/pssb.200879641

CVD growth of single-walled B-doped carbon nanotubes. / Ayala, P. (Corresponding Author); Rümmeli, M. H.; Gemming, T.; Kauppinen, Esko I.; Kuzmany, H.; Pichler, T.

In: Physica Status Solidi B: Basic Research, Vol. 245, No. 10, 2008, p. 1935-1938.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - CVD growth of single-walled B-doped carbon nanotubes

AU - Ayala, P.

AU - Rümmeli, M. H.

AU - Gemming, T.

AU - Kauppinen, Esko I.

AU - Kuzmany, H.

AU - Pichler, T.

PY - 2008

Y1 - 2008

N2 - Chemical Vapor Deposition is a method widely used in the synthesis of carbon nanotubes of one and multiple walls. However, the interdependent parameters playing a role in this synthesis approach are scarcely explored when single‐walled doped carbon nanotubes are the aimed product. It is well known that one method of tailoring the electronic properties of single wall carbon nanotubes is the chemical modification through incorporation of heteroatoms within the tube walls. We describe here the feasibility to use chemical vapor deposition employing high vacuum conditions and a one liquid precursor acting as B and C feedstock simultaneously. TEM exhibits small nanotube bundles containing 3 to 5 tubes with a narrow diameter distribution in relation to nanotube material produced with this method (0.9 to 1.5 nm). The boron content was probed by x‐ray photoelectron spectroscopy as bulk probing method in samples with high nanotube yield.

AB - Chemical Vapor Deposition is a method widely used in the synthesis of carbon nanotubes of one and multiple walls. However, the interdependent parameters playing a role in this synthesis approach are scarcely explored when single‐walled doped carbon nanotubes are the aimed product. It is well known that one method of tailoring the electronic properties of single wall carbon nanotubes is the chemical modification through incorporation of heteroatoms within the tube walls. We describe here the feasibility to use chemical vapor deposition employing high vacuum conditions and a one liquid precursor acting as B and C feedstock simultaneously. TEM exhibits small nanotube bundles containing 3 to 5 tubes with a narrow diameter distribution in relation to nanotube material produced with this method (0.9 to 1.5 nm). The boron content was probed by x‐ray photoelectron spectroscopy as bulk probing method in samples with high nanotube yield.

KW - 61.46.Fg

KW - 68.37.Lp

KW - 78.30.Na

KW - 81.07.De

KW - 81.15.Gh

KW - 82.80.Pv

U2 - 10.1002/pssb.200879641

DO - 10.1002/pssb.200879641

M3 - Article

VL - 245

SP - 1935

EP - 1938

JO - Physica Status Solidi B: Basic Solid State Physics

JF - Physica Status Solidi B: Basic Solid State Physics

SN - 0370-1972

IS - 10

ER -

Ayala P, Rümmeli MH, Gemming T, Kauppinen EI, Kuzmany H, Pichler T. CVD growth of single-walled B-doped carbon nanotubes. Physica Status Solidi B: Basic Research. 2008;245(10):1935-1938. https://doi.org/10.1002/pssb.200879641