TY - JOUR
T1 - Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons
AU - Tuovinen, E.
AU - Härkönen, J.
AU - Luukka, P.
AU - Tuominen, Eija
AU - Verbitskaya, E.
AU - Eremin, V.
AU - Ilyashenko, I.
AU - Pirojenko, A.
AU - Riihimäki, I.
AU - Virtanen, A.
AU - Leinonen, K.
PY - 2006/11/30
Y1 - 2006/11/30
N2 - We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24 GeV / c and 10 MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, β-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10 MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24 GeV / c protons even after high irradiation fluence.
AB - We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24 GeV / c and 10 MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, β-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10 MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24 GeV / c protons even after high irradiation fluence.
KW - Czochralski silicon
KW - Radiation hardness
KW - Scanning electron microscope
KW - Silicon detectors
KW - Transient current technique
UR - http://www.scopus.com/inward/record.url?scp=33750287166&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2006.05.208
DO - 10.1016/j.nima.2006.05.208
M3 - Article
SN - 0168-9002
VL - 568
SP - 83
EP - 88
JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1
ER -