Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons

E. Tuovinen; J. Härkönen; P. Luukka; Eija Tuominen; E. Verbitskaya; V. Eremin; I. Ilyashenko; A. Pirojenko; I. Riihimäki; A. Virtanen; K. Leinonen

doi:10.1016/j.nima.2006.05.208

Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons

E. Tuovinen^*, J. Härkönen, P. Luukka, Eija Tuominen, E. Verbitskaya, V. Eremin, I. Ilyashenko, A. Pirojenko, I. Riihimäki, A. Virtanen, K. Leinonen

^*Corresponding author for this work

Not published at VTT

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15 Citations (Scopus)

Abstract

We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24 GeV / c and 10 MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, β-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10 MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24 GeV / c protons even after high irradiation fluence.

Original language	English
Pages (from-to)	83-88
Journal	Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	568
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2006.05.208
Publication status	Published - 30 Nov 2006
MoE publication type	A1 Journal article-refereed

Funding

Authors are most grateful to Dr. Michael Moll, Dr. Maurice Glaser and Federico Ravotti from CERN for providing the irradiations and for their assistance in the CV and IV measurements. This work has been performed within framework of CERN RD39 and RD50 collaborations. This work was partially financed by the Academy of Finland.

Keywords

Czochralski silicon
Radiation hardness
Scanning electron microscope
Silicon detectors
Transient current technique

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10.1016/j.nima.2006.05.208

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Tuovinen, E., Härkönen, J., Luukka, P., Tuominen, E., Verbitskaya, E., Eremin, V., Ilyashenko, I., Pirojenko, A., Riihimäki, I., Virtanen, A., & Leinonen, K. (2006). Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 568(1), 83-88. https://doi.org/10.1016/j.nima.2006.05.208

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title = "Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons",

abstract = "We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24 GeV / c and 10 MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, β-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10 MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24 GeV / c protons even after high irradiation fluence.",

keywords = "Czochralski silicon, Radiation hardness, Scanning electron microscope, Silicon detectors, Transient current technique",

author = "E. Tuovinen and J. H{\"a}rk{\"o}nen and P. Luukka and Eija Tuominen and E. Verbitskaya and V. Eremin and I. Ilyashenko and A. Pirojenko and I. Riihim{\"a}ki and A. Virtanen and K. Leinonen",

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Tuovinen, E, Härkönen, J, Luukka, P, Tuominen, E, Verbitskaya, E, Eremin, V, Ilyashenko, I, Pirojenko, A, Riihimäki, I, Virtanen, A & Leinonen, K 2006, 'Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 568, no. 1, pp. 83-88. https://doi.org/10.1016/j.nima.2006.05.208

Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons. / Tuovinen, E.; Härkönen, J.; Luukka, P. et al.
In: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 568, No. 1, 30.11.2006, p. 83-88.

Research output: Contribution to journal › Article › Scientific › peer-review

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T1 - Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons

AU - Tuovinen, E.

AU - Härkönen, J.

AU - Luukka, P.

AU - Tuominen, Eija

AU - Verbitskaya, E.

AU - Eremin, V.

AU - Ilyashenko, I.

AU - Pirojenko, A.

AU - Riihimäki, I.

AU - Virtanen, A.

AU - Leinonen, K.

PY - 2006/11/30

Y1 - 2006/11/30

N2 - We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24 GeV / c and 10 MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, β-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10 MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24 GeV / c protons even after high irradiation fluence.

AB - We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24 GeV / c and 10 MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, β-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10 MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24 GeV / c protons even after high irradiation fluence.

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JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Czochralski silicon detectors irradiated with 24 GeV / c and 10 MeV protons

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