DC and AC characteristics and modeling of Si SSD-nano devices

Markku Åberg, Jan Saijets

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    10 Citations (Scopus)

    Abstract

    A theoretical evaluation of high-frequency distortion of three-stage amplifiers adopting the reversed nested Miller compensation is presented. The inherent computation complexity is reduced by exploiting a suitable amplifier model, and the nonlinear contribution of each stage is enucleated. Transistor-level simulations on a CMOS circuit are found to be in very good agreement with expected results
    Original languageEnglish
    Title of host publicationProceedings of the 2005 European Conference on Circuit Theory and Design
    PublisherIEEE Institute of Electrical and Electronic Engineers
    PagesI/15-I/18
    Volume1
    ISBN (Print)0-7803-9066-0
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA4 Article in a conference publication
    EventEuropean Conference on Circuit Theory and Design, ECCTD 2005 - Cork, Ireland
    Duration: 2 Sep 20052 Sep 2005

    Conference

    ConferenceEuropean Conference on Circuit Theory and Design, ECCTD 2005
    CountryIreland
    CityCork
    Period2/09/052/09/05

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    Keywords

    • SOI
    • MOSFET
    • nanoelectronics
    • semiconductor device models
    • silicon-on-insulator
    • AC characteristics
    • DC characteristics
    • SSD model
    • silicon
    • nano scale active components
    • nano scale self switching device
    • side gated transistor
    • nanodevices

    Cite this

    Åberg, M., & Saijets, J. (2005). DC and AC characteristics and modeling of Si SSD-nano devices. In Proceedings of the 2005 European Conference on Circuit Theory and Design (Vol. 1, pp. I/15-I/18). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ECCTD.2005.1522898