DC-stabilized amplifier as a building black for GaAs MMICs

Esa Kemppinen; Esko Järvinen

doi:10.1109/MELCON.1989.50048

DC-stabilized amplifier as a building black for GaAs MMICs

Esa Kemppinen, Esko Järvinen

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

The DC, AC, and noise properties as well as the applications of a variable-gain common-source MESFET amplifier circuit using an active load transistor are discussed. The structure can be used as a versatile building block in analog GaAs integrated circuits. Two applications of the basic circuit are presented. The first is a wideband low-noise amplifier with low power consumption; the second is a phase splitter consisting of two basic amplifier structures in differential configuration. It is concluded that amplifiers using enhancement-type MESFETs result in a better noise figure and lower power consumption than those with depletion-type devices.

Original language	English
Title of host publication	Mediterranean Electrotechnical Conference (MELECON'89)
Place of Publication	Lissabon
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	328-331
DOIs	https://doi.org/10.1109/MELCON.1989.50048
Publication status	Published - 1989
MoE publication type	A4 Article in a conference publication
Event	MELECON '89 Mediterranean Electrochemical Conference - Lissabon, Portugal Duration: 11 Apr 1989 → 13 Apr 1989

Conference

Conference	MELECON '89 Mediterranean Electrochemical Conference
Country/Territory	Portugal
City	Lissabon
Period	11/04/89 → 13/04/89

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10.1109/MELCON.1989.50048

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title = "DC-stabilized amplifier as a building black for GaAs MMICs",

abstract = "The DC, AC, and noise properties as well as the applications of a variable-gain common-source MESFET amplifier circuit using an active load transistor are discussed. The structure can be used as a versatile building block in analog GaAs integrated circuits. Two applications of the basic circuit are presented. The first is a wideband low-noise amplifier with low power consumption; the second is a phase splitter consisting of two basic amplifier structures in differential configuration. It is concluded that amplifiers using enhancement-type MESFETs result in a better noise figure and lower power consumption than those with depletion-type devices.",

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year = "1989",

doi = "10.1109/MELCON.1989.50048",

language = "English",

pages = "328--331",

booktitle = "Mediterranean Electrotechnical Conference (MELECON'89)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

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note = "MELECON '89 Mediterranean Electrochemical Conference ; Conference date: 11-04-1989 Through 13-04-1989",

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T1 - DC-stabilized amplifier as a building black for GaAs MMICs

AU - Kemppinen, Esa

AU - Järvinen, Esko

PY - 1989

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N2 - The DC, AC, and noise properties as well as the applications of a variable-gain common-source MESFET amplifier circuit using an active load transistor are discussed. The structure can be used as a versatile building block in analog GaAs integrated circuits. Two applications of the basic circuit are presented. The first is a wideband low-noise amplifier with low power consumption; the second is a phase splitter consisting of two basic amplifier structures in differential configuration. It is concluded that amplifiers using enhancement-type MESFETs result in a better noise figure and lower power consumption than those with depletion-type devices.

AB - The DC, AC, and noise properties as well as the applications of a variable-gain common-source MESFET amplifier circuit using an active load transistor are discussed. The structure can be used as a versatile building block in analog GaAs integrated circuits. Two applications of the basic circuit are presented. The first is a wideband low-noise amplifier with low power consumption; the second is a phase splitter consisting of two basic amplifier structures in differential configuration. It is concluded that amplifiers using enhancement-type MESFETs result in a better noise figure and lower power consumption than those with depletion-type devices.

U2 - 10.1109/MELCON.1989.50048

DO - 10.1109/MELCON.1989.50048

M3 - Conference article in proceedings

SP - 328

EP - 331

BT - Mediterranean Electrotechnical Conference (MELECON'89)

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Lissabon

T2 - MELECON '89 Mediterranean Electrochemical Conference

Y2 - 11 April 1989 through 13 April 1989

ER -

DC-stabilized amplifier as a building black for GaAs MMICs

Abstract

Conference

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