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Deceleration of silicon etch rate at high aspect ratios
Jyrki Kiihamäki
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
32
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Citations (Scopus)
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Dive into the research topics of 'Deceleration of silicon etch rate at high aspect ratios'. Together they form a unique fingerprint.
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Keyphrases
High Aspect Ratio
100%
Sidewall
100%
Etching Rate
100%
Deceleration
100%
Silicon Etching
100%
Passivation
60%
Aspect Ratio
40%
Conductance-based Model
40%
Flow Conductance
40%
Etch-stop
40%
Measurement Results
20%
Monte Carlo Simulation
20%
Layer Deposition
20%
Multiplexing
20%
Deep Hole
20%
Spearheads
20%
Etchant
20%
Polymer Etching
20%
Deep Trench
20%
Passivation Layer
20%
Etching Process
20%
Step Coverage
20%
Deep Silicon Etching
20%
High Aspect Ratio Features
20%
Tapered Tube
20%
Reaction Probability
20%
Molecular Flow
20%
Process Parameters Influence
20%
INIS
silicon
100%
aspect ratio
100%
deceleration
100%
etching
83%
passivation
66%
holes
33%
simulation
16%
layers
16%
polymers
16%
monte carlo method
16%
shape
16%
losses
16%
removal
16%
deposition
16%
closures
16%
ions
16%
breakdown
16%
probability
16%
tubes
16%
Engineering
Etch Rate
100%
Side Wall
100%
High Aspect Ratio
100%
Passivation
60%
Aspect Ratio
40%
Deep Hole
20%
Time Domain
20%
Process Parameter
20%
Good Result
20%
Main Reason
20%
Passivation Layer
20%
Step Etch
20%
Material Science
Silicon
100%