Abstract
Original language | English |
---|---|
Pages (from-to) | 677-684 |
Journal | Sensors and Actuators A: Physical |
Volume | 141 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2008 |
MoE publication type | A1 Journal article-refereed |
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Keywords
- Plasma etching
- Glass
- Silicon
- Shadow mask
- C4F8
- Aspect ratio
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Deep plasma etching of glass with a silicon shadow mask. / Kolari, Kai.
In: Sensors and Actuators A: Physical, Vol. 141, No. 2, 2008, p. 677-684.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Deep plasma etching of glass with a silicon shadow mask
AU - Kolari, Kai
PY - 2008
Y1 - 2008
N2 - Inductively coupled plasma reactive ion etching (ICP RIE) has been successfully used for deep (>300 μm) etching of silica and glass with a non-bonded silicon shadow mask. A standard silicon wafer as the mask, many laborious processing steps are avoided and the mask can be used many times. Aspect ratios exceeding 3:1 have been achieved with 400 μm silicon wafer mask by tuning the source and bias powers, gas composition and pressure. It is of major importance to optimize the etching process for deep etching silica glass when a bonded silicon mask is not be used. In this work, effects of plasma etching conditions to etch performance were studied to optimize the plasma etching process for the clamped silicon mask wafer.
AB - Inductively coupled plasma reactive ion etching (ICP RIE) has been successfully used for deep (>300 μm) etching of silica and glass with a non-bonded silicon shadow mask. A standard silicon wafer as the mask, many laborious processing steps are avoided and the mask can be used many times. Aspect ratios exceeding 3:1 have been achieved with 400 μm silicon wafer mask by tuning the source and bias powers, gas composition and pressure. It is of major importance to optimize the etching process for deep etching silica glass when a bonded silicon mask is not be used. In this work, effects of plasma etching conditions to etch performance were studied to optimize the plasma etching process for the clamped silicon mask wafer.
KW - Plasma etching
KW - Glass
KW - Silicon
KW - Shadow mask
KW - C4F8
KW - Aspect ratio
U2 - 10.1016/j.sna.2007.09.005
DO - 10.1016/j.sna.2007.09.005
M3 - Article
VL - 141
SP - 677
EP - 684
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
SN - 0924-4247
IS - 2
ER -