Deep plasma etching of glass with a silicon shadow mask

Kai Kolari

Research output: Contribution to journal › Article › Scientific › peer-review

34 Citations (Scopus)

Abstract

Inductively coupled plasma reactive ion etching (ICP RIE) has been successfully used for deep (>300 μm) etching of silica and glass with a non-bonded silicon shadow mask. A standard silicon wafer as the mask, many laborious processing steps are avoided and the mask can be used many times. Aspect ratios exceeding 3:1 have been achieved with 400 μm silicon wafer mask by tuning the source and bias powers, gas composition and pressure. It is of major importance to optimize the etching process for deep etching silica glass when a bonded silicon mask is not be used. In this work, effects of plasma etching conditions to etch performance were studied to optimize the plasma etching process for the clamped silicon mask wafer.
Original languageEnglish
Pages (from-to)677 - 684
Number of pages8
JournalSensors and Actuators A: Physical
Volume141
Issue number2
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

Fingerprint

Plasma etching
plasma etching
Silicon
Masks
masks
Glass
glass
silicon
etching
Etching
wafers
Silicon wafers
gas composition
Reactive ion etching
silica glass
Inductively coupled plasma
Fused silica
Silicon Dioxide
gas pressure
aspect ratio

Keywords

  • Plasma etching
  • Glass
  • Silicon
  • Shadow mask
  • C4F8
  • Aspect ratio

Cite this

Kolari, Kai. / Deep plasma etching of glass with a silicon shadow mask. In: Sensors and Actuators A: Physical. 2008 ; Vol. 141, No. 2. pp. 677 - 684.
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Kolari, K 2008, 'Deep plasma etching of glass with a silicon shadow mask', Sensors and Actuators A: Physical, vol. 141, no. 2, pp. 677 - 684. https://doi.org/10.1016/j.sna.2007.09.005

Deep plasma etching of glass with a silicon shadow mask. / Kolari, Kai.

In: Sensors and Actuators A: Physical, Vol. 141, No. 2, 2008, p. 677 - 684.

Research output: Contribution to journal › Article › Scientific › peer-review

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N2 - Inductively coupled plasma reactive ion etching (ICP RIE) has been successfully used for deep (>300 μm) etching of silica and glass with a non-bonded silicon shadow mask. A standard silicon wafer as the mask, many laborious processing steps are avoided and the mask can be used many times. Aspect ratios exceeding 3:1 have been achieved with 400 μm silicon wafer mask by tuning the source and bias powers, gas composition and pressure. It is of major importance to optimize the etching process for deep etching silica glass when a bonded silicon mask is not be used. In this work, effects of plasma etching conditions to etch performance were studied to optimize the plasma etching process for the clamped silicon mask wafer.

AB - Inductively coupled plasma reactive ion etching (ICP RIE) has been successfully used for deep (>300 μm) etching of silica and glass with a non-bonded silicon shadow mask. A standard silicon wafer as the mask, many laborious processing steps are avoided and the mask can be used many times. Aspect ratios exceeding 3:1 have been achieved with 400 μm silicon wafer mask by tuning the source and bias powers, gas composition and pressure. It is of major importance to optimize the etching process for deep etching silica glass when a bonded silicon mask is not be used. In this work, effects of plasma etching conditions to etch performance were studied to optimize the plasma etching process for the clamped silicon mask wafer.

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Kolari K. Deep plasma etching of glass with a silicon shadow mask. Sensors and Actuators A: Physical. 2008;141(2):677 - 684. https://doi.org/10.1016/j.sna.2007.09.005

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