Deep silicon etching in inductively coupled plasma reactor for mems

Jyrki Kiihamäki, Sami Franssila

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

We have used an inductively coupled plasma (ICP) reactor to etch deep features with SF6/C4F8 pulsed processes. Microelectromechanical system (MEMS) applications require 10–500 µm deep structures to be etched into silicon. The etch rate has to be carefully defined: in plasma etching the etch rate is a function of feature size (RIE lag), of etch time (ARDE, aspect ratio dependent etching) and loading (pattern density). Three processes have been characterized with respect to etch rate, loading, RIE lag, ARDE and sidewall profile. The high rate process has 7 µm/min maximum etch rate but it exhibits severe RIE-lag and ARDE. Two other processes with maximum etch rates of 3.5 µm/min and 1.6 µm/min are much less prone to RIE-lag and ARDE. Etch profiles and their non-idealities have been studied. Vertical, positively sloped, negatively sloped and barrel-like profiles result depending on process and feature size.
Original languageEnglish
Pages (from-to)250-254
Number of pages5
JournalPhysica Scripta
Issue numberT79
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

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Etching
Ratio-dependent
Reactor
Silicon
Plasma
Aspect Ratio
reactors
etching
aspect ratio
time lag
silicon
profiles
loading rate
plasma etching
Micro-electro-mechanical Systems
microelectromechanical systems
Vertical
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Cite this

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abstract = "We have used an inductively coupled plasma (ICP) reactor to etch deep features with SF6/C4F8 pulsed processes. Microelectromechanical system (MEMS) applications require 10–500 µm deep structures to be etched into silicon. The etch rate has to be carefully defined: in plasma etching the etch rate is a function of feature size (RIE lag), of etch time (ARDE, aspect ratio dependent etching) and loading (pattern density). Three processes have been characterized with respect to etch rate, loading, RIE lag, ARDE and sidewall profile. The high rate process has 7 µm/min maximum etch rate but it exhibits severe RIE-lag and ARDE. Two other processes with maximum etch rates of 3.5 µm/min and 1.6 µm/min are much less prone to RIE-lag and ARDE. Etch profiles and their non-idealities have been studied. Vertical, positively sloped, negatively sloped and barrel-like profiles result depending on process and feature size.",
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Deep silicon etching in inductively coupled plasma reactor for mems. / Kiihamäki, Jyrki; Franssila, Sami.

In: Physica Scripta, No. T79, 1999, p. 250-254.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Deep silicon etching in inductively coupled plasma reactor for mems

AU - Kiihamäki, Jyrki

AU - Franssila, Sami

PY - 1999

Y1 - 1999

N2 - We have used an inductively coupled plasma (ICP) reactor to etch deep features with SF6/C4F8 pulsed processes. Microelectromechanical system (MEMS) applications require 10–500 µm deep structures to be etched into silicon. The etch rate has to be carefully defined: in plasma etching the etch rate is a function of feature size (RIE lag), of etch time (ARDE, aspect ratio dependent etching) and loading (pattern density). Three processes have been characterized with respect to etch rate, loading, RIE lag, ARDE and sidewall profile. The high rate process has 7 µm/min maximum etch rate but it exhibits severe RIE-lag and ARDE. Two other processes with maximum etch rates of 3.5 µm/min and 1.6 µm/min are much less prone to RIE-lag and ARDE. Etch profiles and their non-idealities have been studied. Vertical, positively sloped, negatively sloped and barrel-like profiles result depending on process and feature size.

AB - We have used an inductively coupled plasma (ICP) reactor to etch deep features with SF6/C4F8 pulsed processes. Microelectromechanical system (MEMS) applications require 10–500 µm deep structures to be etched into silicon. The etch rate has to be carefully defined: in plasma etching the etch rate is a function of feature size (RIE lag), of etch time (ARDE, aspect ratio dependent etching) and loading (pattern density). Three processes have been characterized with respect to etch rate, loading, RIE lag, ARDE and sidewall profile. The high rate process has 7 µm/min maximum etch rate but it exhibits severe RIE-lag and ARDE. Two other processes with maximum etch rates of 3.5 µm/min and 1.6 µm/min are much less prone to RIE-lag and ARDE. Etch profiles and their non-idealities have been studied. Vertical, positively sloped, negatively sloped and barrel-like profiles result depending on process and feature size.

U2 - 10.1238/Physica.Topical.079a00250

DO - 10.1238/Physica.Topical.079a00250

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JO - Physica Scripta

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