Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits

Matteo Cherchi, Sami Ylinen, Mikko Harjanne, Markku Kapulainen, Timo Aalto, George T. Kanellos, Dimitrios Fitsios, Nikos Pleros

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

7 Citations (Scopus)

Abstract

We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.
Original languageEnglish
Title of host publicationSilicon Photonics VIII
EditorsJoel Kubby, Graham T. Reed
PublisherInternational Society for Optics and Photonics SPIE
ISBN (Print)978-0-8194-9398-9
DOIs
Publication statusPublished - 2013
MoE publication typeA4 Article in a conference publication
EventSilicon Photonics VIII, 4 - 6 February 2013,San Francisco, CA, United States -
Duration: 1 Jan 2013 → …

Publication series

SeriesProceedings of SPIE
Volume8629
ISSN0277-786X

Conference

ConferenceSilicon Photonics VIII, 4 - 6 February 2013,San Francisco, CA, United States
Period1/01/13 → …

Fingerprint

Semiconductor optical amplifiers
Random access storage
Silicon
Mach-Zehnder interferometers
Networks (circuits)
Spontaneous emission
Resonators
Bandpass filters
Waveguides
Wavelength

Keywords

  • high density integration
  • integrated silicon photonics
  • mmi couplers
  • mzi filters
  • optical
  • optical ram cells

Cite this

Cherchi, M., Ylinen, S., Harjanne, M., Kapulainen, M., Aalto, T., Kanellos, G. T., ... Pleros, N. (2013). Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits. In J. Kubby, & G. T. Reed (Eds.), Silicon Photonics VIII [86290C] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 8629 https://doi.org/10.1117/12.2002111
Cherchi, Matteo ; Ylinen, Sami ; Harjanne, Mikko ; Kapulainen, Markku ; Aalto, Timo ; Kanellos, George T. ; Fitsios, Dimitrios ; Pleros, Nikos. / Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits. Silicon Photonics VIII. editor / Joel Kubby ; Graham T. Reed. International Society for Optics and Photonics SPIE, 2013. (Proceedings of SPIE, Vol. 8629).
@inproceedings{7624fb63b9fc436da0d094f7dc57bb04,
title = "Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits",
abstract = "We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.",
keywords = "high density integration, integrated silicon photonics, mmi couplers, mzi filters, optical, optical ram cells",
author = "Matteo Cherchi and Sami Ylinen and Mikko Harjanne and Markku Kapulainen and Timo Aalto and Kanellos, {George T.} and Dimitrios Fitsios and Nikos Pleros",
year = "2013",
doi = "10.1117/12.2002111",
language = "English",
isbn = "978-0-8194-9398-9",
series = "Proceedings of SPIE",
publisher = "International Society for Optics and Photonics SPIE",
editor = "Joel Kubby and Reed, {Graham T.}",
booktitle = "Silicon Photonics VIII",
address = "United States",

}

Cherchi, M, Ylinen, S, Harjanne, M, Kapulainen, M, Aalto, T, Kanellos, GT, Fitsios, D & Pleros, N 2013, Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits. in J Kubby & GT Reed (eds), Silicon Photonics VIII., 86290C, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 8629, Silicon Photonics VIII, 4 - 6 February 2013,San Francisco, CA, United States, 1/01/13. https://doi.org/10.1117/12.2002111

Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits. / Cherchi, Matteo; Ylinen, Sami; Harjanne, Mikko; Kapulainen, Markku; Aalto, Timo; Kanellos, George T.; Fitsios, Dimitrios; Pleros, Nikos.

Silicon Photonics VIII. ed. / Joel Kubby; Graham T. Reed. International Society for Optics and Photonics SPIE, 2013. 86290C (Proceedings of SPIE, Vol. 8629).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits

AU - Cherchi, Matteo

AU - Ylinen, Sami

AU - Harjanne, Mikko

AU - Kapulainen, Markku

AU - Aalto, Timo

AU - Kanellos, George T.

AU - Fitsios, Dimitrios

AU - Pleros, Nikos

PY - 2013

Y1 - 2013

N2 - We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.

AB - We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.

KW - high density integration

KW - integrated silicon photonics

KW - mmi couplers

KW - mzi filters

KW - optical

KW - optical ram cells

U2 - 10.1117/12.2002111

DO - 10.1117/12.2002111

M3 - Conference article in proceedings

SN - 978-0-8194-9398-9

T3 - Proceedings of SPIE

BT - Silicon Photonics VIII

A2 - Kubby, Joel

A2 - Reed, Graham T.

PB - International Society for Optics and Photonics SPIE

ER -

Cherchi M, Ylinen S, Harjanne M, Kapulainen M, Aalto T, Kanellos GT et al. Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits. In Kubby J, Reed GT, editors, Silicon Photonics VIII. International Society for Optics and Photonics SPIE. 2013. 86290C. (Proceedings of SPIE, Vol. 8629). https://doi.org/10.1117/12.2002111