Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits

Matteo Cherchi, Sami Ylinen, Mikko Harjanne, Markku Kapulainen, Timo Aalto, George T. Kanellos, Dimitrios Fitsios, Nikos Pleros

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    7 Citations (Scopus)

    Abstract

    We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.
    Original languageEnglish
    Title of host publicationSilicon Photonics VIII
    EditorsJoel Kubby, Graham T. Reed
    PublisherInternational Society for Optics and Photonics SPIE
    ISBN (Print)978-0-8194-9398-9
    DOIs
    Publication statusPublished - 2013
    MoE publication typeA4 Article in a conference publication
    EventSilicon Photonics VIII, 4 - 6 February 2013,San Francisco, CA, United States -
    Duration: 1 Jan 2013 → …

    Publication series

    SeriesProceedings of SPIE
    Volume8629
    ISSN0277-786X

    Conference

    ConferenceSilicon Photonics VIII, 4 - 6 February 2013,San Francisco, CA, United States
    Period1/01/13 → …

    Fingerprint

    Semiconductor optical amplifiers
    Random access storage
    Silicon
    Mach-Zehnder interferometers
    Networks (circuits)
    Spontaneous emission
    Resonators
    Bandpass filters
    Waveguides
    Wavelength

    Keywords

    • high density integration
    • integrated silicon photonics
    • mmi couplers
    • mzi filters
    • optical
    • optical ram cells

    Cite this

    Cherchi, M., Ylinen, S., Harjanne, M., Kapulainen, M., Aalto, T., Kanellos, G. T., ... Pleros, N. (2013). Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits. In J. Kubby, & G. T. Reed (Eds.), Silicon Photonics VIII [86290C] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 8629 https://doi.org/10.1117/12.2002111
    Cherchi, Matteo ; Ylinen, Sami ; Harjanne, Mikko ; Kapulainen, Markku ; Aalto, Timo ; Kanellos, George T. ; Fitsios, Dimitrios ; Pleros, Nikos. / Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits. Silicon Photonics VIII. editor / Joel Kubby ; Graham T. Reed. International Society for Optics and Photonics SPIE, 2013. (Proceedings of SPIE, Vol. 8629).
    @inproceedings{7624fb63b9fc436da0d094f7dc57bb04,
    title = "Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits",
    abstract = "We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.",
    keywords = "high density integration, integrated silicon photonics, mmi couplers, mzi filters, optical, optical ram cells",
    author = "Matteo Cherchi and Sami Ylinen and Mikko Harjanne and Markku Kapulainen and Timo Aalto and Kanellos, {George T.} and Dimitrios Fitsios and Nikos Pleros",
    year = "2013",
    doi = "10.1117/12.2002111",
    language = "English",
    isbn = "978-0-8194-9398-9",
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    booktitle = "Silicon Photonics VIII",
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    Cherchi, M, Ylinen, S, Harjanne, M, Kapulainen, M, Aalto, T, Kanellos, GT, Fitsios, D & Pleros, N 2013, Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits. in J Kubby & GT Reed (eds), Silicon Photonics VIII., 86290C, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 8629, Silicon Photonics VIII, 4 - 6 February 2013,San Francisco, CA, United States, 1/01/13. https://doi.org/10.1117/12.2002111

    Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits. / Cherchi, Matteo; Ylinen, Sami; Harjanne, Mikko; Kapulainen, Markku; Aalto, Timo; Kanellos, George T.; Fitsios, Dimitrios; Pleros, Nikos.

    Silicon Photonics VIII. ed. / Joel Kubby; Graham T. Reed. International Society for Optics and Photonics SPIE, 2013. 86290C (Proceedings of SPIE, Vol. 8629).

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Cherchi, Matteo

    AU - Ylinen, Sami

    AU - Harjanne, Mikko

    AU - Kapulainen, Markku

    AU - Aalto, Timo

    AU - Kanellos, George T.

    AU - Fitsios, Dimitrios

    AU - Pleros, Nikos

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    N2 - We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.

    AB - We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.

    KW - high density integration

    KW - integrated silicon photonics

    KW - mmi couplers

    KW - mzi filters

    KW - optical

    KW - optical ram cells

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    DO - 10.1117/12.2002111

    M3 - Conference article in proceedings

    SN - 978-0-8194-9398-9

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    ER -

    Cherchi M, Ylinen S, Harjanne M, Kapulainen M, Aalto T, Kanellos GT et al. Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits. In Kubby J, Reed GT, editors, Silicon Photonics VIII. International Society for Optics and Photonics SPIE. 2013. 86290C. (Proceedings of SPIE, Vol. 8629). https://doi.org/10.1117/12.2002111