Abstract
Defect formation has been studied in nitrogen-implanted
III-V compound semiconductor material InP. Sulphur-doped
n-type (100) InP samples were implanted at room
temperature with 30 keV 15N+ion doses of 10 power in14 -
10 power in 16 N atoms cm-2. The implanted samples were
subjected to isochronal vacuum annealing in the
temperature range of 450-650 °C. The annealing behavior
of nitrogen atom distributions, implantation-induced
displacements of indium atoms, vacancy-type defects, and
damage annealing were studied by nuclear resonance
broadening, secondary ion mass spectrometry, ion
backscattering and channeling, and slow positron
annihilation techniques. Doses above 10 power in 15 N
atoms cm-2 were found to produce amorphous layers
extending from the surface to depths beyond the deposited
energy distribution, up to 110 nm. The depth of an
amorphous layer was observed to depend on the
implantation dose. Temperature and dose-dependent
epitaxial regrowth starting from the
amorphous-crystalline interface was observed at 575 °C.
The damage and vacancy concentration distributions were
correlated with the implanted nitrogen distribution in
the case of the highest implantation dose at 10 power in
16 N atoms cm-2 ; disorder annealing and loss of nitrogen
behave in a like manner with increasing temperature. For
the lower doses, however, almost no redistribution or
loss of nitrogen arose despite structural damage and
vacancy annealing. Interpretation of the positron data
allowed an identification of two types of vacancies. The
type of the vacancy defects was found to depend on the
implantation dose and annealing temperature;
mono-vacancies were formed in the In sublattice at the
low implantation doses, while the highest dose produced
divacancies. The annealing tended to convert the
mono-vacancies into divacancies, which were recovered at
high temperatures depending on the implantation dose.
Original language | English |
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Pages (from-to) | 738-746 |
Journal | Journal of Applied Physics |
Volume | 83 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1998 |
MoE publication type | A1 Journal article-refereed |