Keyphrases
Low Energy
100%
Formation Behavior
100%
Defect Formation
100%
Annealing Behavior
100%
Implantation Dose
100%
Defect Annealing
100%
Annealing
80%
N Atoms
60%
Amorphous Layer
40%
Monovacancy
40%
Divacancy
40%
Vacancy Defects
40%
High Temperature
20%
Increased Temperature
20%
Dose Effect
20%
Temperature Effect
20%
Secondary Ion Mass Spectrometry
20%
Temperature Range
20%
High Dose
20%
Structural Damage
20%
Room Temperature
20%
Nuclear Magnetic Resonance
20%
Backscatter
20%
Energy Distribution
20%
III-V Semiconductors
20%
Annealing Temperature
20%
Indium
20%
Concentration Distribution
20%
Positron Annihilation Spectroscopy
20%
Atom Vacancies
20%
Vacancy Concentration
20%
Nitrogen Distribution
20%
Epitaxial Regrowth
20%
Amorphous Interface
20%
Ion Dose
20%
Resonance Broadening
20%
Nitrogen Atom
20%
Sublattice
20%
Compound Semiconductor Materials
20%
Induced Displacement
20%
Structural Vacancy
20%
Isochronal
20%
Damage Concentration
20%
Atom Distribution
20%
Positron
20%
Sulfur-doped
20%
Slow Positron Annihilation
20%
Vacuum Annealing
20%
Deposited Energy
20%
Low Implantation
20%
INIS
energy
100%
annealing
100%
doses
100%
ions
100%
nitrogen 15
100%
defects
100%
indium phosphides
100%
vacancies
70%
atoms
50%
nitrogen
50%
power
40%
distribution
30%
damage
30%
layers
20%
losses
20%
depth
20%
positrons
20%
nitrogen 16
20%
surfaces
10%
data
10%
interfaces
10%
doped materials
10%
concentration
10%
increasing
10%
kev range
10%
resonance
10%
semiconductor materials
10%
sulfur
10%
mass spectrometry
10%
annihilation
10%
temperature range
10%
temperature range 0273-0400 k
10%
energy distribution
10%
indium
10%
vanadium compounds
10%
backscattering
10%
epitaxy
10%
channeling
10%
Material Science
Annealing
100%
Semiconductor Material
16%
III-V Semiconductor
16%
Vacancy Defect
16%
Indium
16%
Secondary Ion Mass Spectrometry
16%
Surface (Surface Science)
16%