Defect induced enhanced low field magnetoresistance and photoresponse in Pr0.6Ca0.4MnO3 thin films

T. Elovaara, S. Majumdar, H. Huhtinen, P. Paturi

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

Abstract

We have investigated the effect of grain boundary related defects on the electronic transport properties of the colossal magnetoresistive low bandwidth manganite Pr0:6Ca0:4MnO3 (PCMO) thin films. A series of PCMO films were prepared by pulsed laser deposition method on MgO and STO substrates. Characterizations of the structural, magnetic and magneto-transport properties show that the films prepared on MgO substrate contain higher amount of structural defects and with decreasing deposition temperature an increasing amount of difierent crystal orientations as the level of texturing decreases. According to the low field magnetoresistance (MR) measurements, the poorly textured samples display an increased low field MR due to a grain boundary tunneling effect at low temperatures compared to the fully textured PCMO film on STO substrate. However, in spite of the level of texturing, all the samples showed a colossal magnetoresistive insulator to metal switching of almost eight orders of magnitude at low temperatures. The magnetic field required for insulator to metal transition (IMT) is much higher in PCMO samples with more structural defects. However, IMT field could be reduced over 3 T by illuminating the sample.
Original languageEnglish
Pages (from-to)62-69
JournalPhysics Procedia
Volume75
DOIs
Publication statusPublished - 2015
MoE publication typeA4 Article in a conference publication

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defects
insulators
thin films
grain boundaries
transport properties
transition metals
illuminating
pulsed laser deposition
bandwidth
electronics
magnetic fields
metals
crystals
temperature

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@article{ecd0591fe90543db91ed3f3c6815521b,
title = "Defect induced enhanced low field magnetoresistance and photoresponse in Pr0.6Ca0.4MnO3 thin films",
abstract = "We have investigated the effect of grain boundary related defects on the electronic transport properties of the colossal magnetoresistive low bandwidth manganite Pr0:6Ca0:4MnO3 (PCMO) thin films. A series of PCMO films were prepared by pulsed laser deposition method on MgO and STO substrates. Characterizations of the structural, magnetic and magneto-transport properties show that the films prepared on MgO substrate contain higher amount of structural defects and with decreasing deposition temperature an increasing amount of difierent crystal orientations as the level of texturing decreases. According to the low field magnetoresistance (MR) measurements, the poorly textured samples display an increased low field MR due to a grain boundary tunneling effect at low temperatures compared to the fully textured PCMO film on STO substrate. However, in spite of the level of texturing, all the samples showed a colossal magnetoresistive insulator to metal switching of almost eight orders of magnitude at low temperatures. The magnetic field required for insulator to metal transition (IMT) is much higher in PCMO samples with more structural defects. However, IMT field could be reduced over 3 T by illuminating the sample.",
author = "T. Elovaara and S. Majumdar and H. Huhtinen and P. Paturi",
year = "2015",
doi = "10.1016/j.phpro.2015.12.010",
language = "English",
volume = "75",
pages = "62--69",
journal = "Physics Procedia",
issn = "1875-3884",
publisher = "Elsevier",

}

Defect induced enhanced low field magnetoresistance and photoresponse in Pr0.6Ca0.4MnO3 thin films. / Elovaara, T.; Majumdar, S.; Huhtinen, H.; Paturi, P.

In: Physics Procedia, Vol. 75, 2015, p. 62-69.

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

TY - JOUR

T1 - Defect induced enhanced low field magnetoresistance and photoresponse in Pr0.6Ca0.4MnO3 thin films

AU - Elovaara, T.

AU - Majumdar, S.

AU - Huhtinen, H.

AU - Paturi, P.

PY - 2015

Y1 - 2015

N2 - We have investigated the effect of grain boundary related defects on the electronic transport properties of the colossal magnetoresistive low bandwidth manganite Pr0:6Ca0:4MnO3 (PCMO) thin films. A series of PCMO films were prepared by pulsed laser deposition method on MgO and STO substrates. Characterizations of the structural, magnetic and magneto-transport properties show that the films prepared on MgO substrate contain higher amount of structural defects and with decreasing deposition temperature an increasing amount of difierent crystal orientations as the level of texturing decreases. According to the low field magnetoresistance (MR) measurements, the poorly textured samples display an increased low field MR due to a grain boundary tunneling effect at low temperatures compared to the fully textured PCMO film on STO substrate. However, in spite of the level of texturing, all the samples showed a colossal magnetoresistive insulator to metal switching of almost eight orders of magnitude at low temperatures. The magnetic field required for insulator to metal transition (IMT) is much higher in PCMO samples with more structural defects. However, IMT field could be reduced over 3 T by illuminating the sample.

AB - We have investigated the effect of grain boundary related defects on the electronic transport properties of the colossal magnetoresistive low bandwidth manganite Pr0:6Ca0:4MnO3 (PCMO) thin films. A series of PCMO films were prepared by pulsed laser deposition method on MgO and STO substrates. Characterizations of the structural, magnetic and magneto-transport properties show that the films prepared on MgO substrate contain higher amount of structural defects and with decreasing deposition temperature an increasing amount of difierent crystal orientations as the level of texturing decreases. According to the low field magnetoresistance (MR) measurements, the poorly textured samples display an increased low field MR due to a grain boundary tunneling effect at low temperatures compared to the fully textured PCMO film on STO substrate. However, in spite of the level of texturing, all the samples showed a colossal magnetoresistive insulator to metal switching of almost eight orders of magnitude at low temperatures. The magnetic field required for insulator to metal transition (IMT) is much higher in PCMO samples with more structural defects. However, IMT field could be reduced over 3 T by illuminating the sample.

U2 - 10.1016/j.phpro.2015.12.010

DO - 10.1016/j.phpro.2015.12.010

M3 - Article in a proceedings journal

VL - 75

SP - 62

EP - 69

JO - Physics Procedia

JF - Physics Procedia

SN - 1875-3884

ER -