Defect structure of a free standing GaN wafer grown by the ammonothermal method

Sakari Sintonen, Sami Suihkonen, Henri Jussila, Harri Lipsanen, Turkka O. Tuomi, Edward Letts, Sierra Hoff, Tadao Hashimoto

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)72-77
Number of pages6
JournalJournal of Crystal Growth
Publication statusPublished - 15 Nov 2014
MoE publication typeA1 Journal article-refereed


  • Defects
  • Growth from solutions
  • Nitrides
  • Single crystal growth
  • X-ray diffraction
  • X-ray topography

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