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Defect structure of a free standing GaN wafer grown by the ammonothermal method

  • Sakari Sintonen
  • , Sami Suihkonen
  • , Henri Jussila
  • , Harri Lipsanen
  • , Turkka O. Tuomi
  • , Edward Letts
  • , Sierra Hoff
  • , Tadao Hashimoto
  • Aalto University
  • SixPoint Materials, Inc.

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)72-77
Number of pages6
JournalJournal of Crystal Growth
Volume406
DOIs
Publication statusPublished - 15 Nov 2014
MoE publication typeA1 Journal article-refereed

Keywords

  • Defects
  • Growth from solutions
  • Nitrides
  • Single crystal growth
  • X-ray diffraction
  • X-ray topography

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