Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

Ying Liu; Zhenbing Tan; Manohar Kumar; Abhilash Thanniyil Sebastian; Guan-jun Liu; Pertti Hakonen

doi:10.1063/1.5042327

Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

Ying Liu, Zhenbing Tan, Manohar Kumar, Abhilash Thanniyil Sebastian, Guan-jun Liu, Pertti Hakonen

Not published at VTT

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11 Citations (Scopus)

Abstract

Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.

Original language	English
Article number	0911021
Journal	APL Materials
Volume	6
Issue number	9
DOIs	https://doi.org/10.1063/1.5042327
Publication status	Published - 11 Sept 2018
MoE publication type	A1 Journal article-refereed

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10.1063/1.5042327

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title = "Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials",

abstract = "Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.",

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AU - Liu, Ying

AU - Tan, Zhenbing

AU - Kumar, Manohar

AU - Thanniyil Sebastian, Abhilash

AU - Liu, Guan-jun

AU - Hakonen, Pertti

PY - 2018/9/11

Y1 - 2018/9/11

N2 - Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.

AB - Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.

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Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

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