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Defects in Single Crystalline Ammonothermal Gallium Nitride
Sami Suihkonen
*
, Siddha Pimputkar
, Sakari Sintonen
, Filip Tuomisto
*
Corresponding author for this work
Not published at VTT
Aalto University
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
54
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Keyphrases
Gallium Nitride
100%
Ammonothermal
100%
Single-crystalline
100%
High-crystalline
25%
Crystal Quality
25%
III-N
25%
Impurities
12%
Commercially Available
12%
High Performance
12%
Material Properties
12%
Dislocation
12%
Single Crystal
12%
Sapphire
12%
Substrate Material
12%
Measurement Techniques
12%
Density Distribution
12%
Feasible Method
12%
Device Application
12%
Impurity Effect
12%
Power Device
12%
Structural Quality
12%
Bulk Crystal
12%
As-grown
12%
Light Emitters
12%
Light Power
12%
Point Defect Concentration
12%
Homoepitaxy
12%
Gallium Nitride Crystal
12%
Ammonothermal Method
12%
Ammonothermal Growth
12%
Low Dislocation Density
12%
Native Defects
12%
INIS
defects
100%
monocrystals
100%
gallium nitrides
100%
substrates
66%
devices
44%
crystals
33%
impurities
22%
dislocations
22%
point defects
22%
performance
11%
density
11%
applications
11%
single crystals
11%
cost
11%
silicon
11%
concentration
11%
power
11%
growth
11%
distribution
11%
evaluation
11%
sapphire
11%
Material Science
Gallium Nitride
100%
Point Defect
22%
Sapphire
11%
Materials Property
11%
Density
11%
Silicon
11%
Power Device
11%
Single Crystal
11%
Engineering
Nitride
100%
Crystalline Quality
22%
Substrate Material
11%
Power Device
11%
Dislocation Density
11%
Density Distribution
11%
Ammonothermal Method
11%
Bulk Crystal
11%