Skip to main navigation
Skip to search
Skip to main content
VTT's Research Information Portal Home
Search content at VTT's Research Information Portal
Home
Profiles
Research output
Projects
Datasets
Research units
Research Infrastructures
Activities
Prizes
Press/Media
Impacts
Defects in Single Crystalline Ammonothermal Gallium Nitride
Sami Suihkonen
*
, Siddha Pimputkar
, Sakari Sintonen
, Filip Tuomisto
*
Corresponding author for this work
Not published at VTT
Aalto University
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
55
Link opens in a new tab
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Defects in Single Crystalline Ammonothermal Gallium Nitride'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Ammonothermal
100%
Ammonothermal Growth
12%
Ammonothermal Method
12%
As-grown
12%
Bulk Crystal
12%
Commercially Available
12%
Crystal Quality
25%
Density Distribution
12%
Device Application
12%
Dislocation
12%
Feasible Method
12%
Gallium Nitride
100%
Gallium Nitride Crystal
12%
High Performance
12%
High-crystalline
25%
Homoepitaxy
12%
III-N
25%
Impurities
12%
Impurity Effect
12%
Light Emitters
12%
Light Power
12%
Low Dislocation Density
12%
Material Properties
12%
Measurement Techniques
12%
Native Defects
12%
Point Defect Concentration
12%
Power Device
12%
Sapphire
12%
Single Crystal
12%
Single-crystalline
100%
Structural Quality
12%
Substrate Material
12%
INIS
applications
11%
concentration
11%
cost
11%
crystals
33%
defects
100%
density
11%
devices
44%
dislocations
22%
distribution
11%
evaluation
11%
gallium nitrides
100%
growth
11%
impurities
22%
monocrystals
100%
performance
11%
point defects
22%
power
11%
sapphire
11%
silicon
11%
single crystals
11%
substrates
66%
Material Science
Density
11%
Gallium Nitride
100%
Materials Property
11%
Point Defect
22%
Power Device
11%
Sapphire
11%
Silicon
11%
Single Crystal
11%
Engineering
Ammonothermal Method
11%
Bulk Crystal
11%
Crystalline Quality
22%
Density Distribution
11%
Dislocation Density
11%
Nitride
100%
Power Device
11%
Substrate Material
11%