Abstract
We have achieved uniform etched depth regardless of feature size by employing a combination of anisotropic plasma etching in inductively coupled plasma (ICP) followed by wet etching. In our approach, the original feature is divided into small elementary features in a mosaic-like pattern. These individual small features are all the same size and thus exhibit identical etch rates and sidewall profiles. Final patterns are completed by wet etching: the ridges between the elementary features are removed in TMAH. In this paper, we present the results obtained using this dry/wet etching sequence. The benefits and limitations of this method are described. Extensions to more complex multidepth structures are discussed.
Original language | English |
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Pages (from-to) | 234 - 238 |
Number of pages | 5 |
Journal | Sensors and Actuators A: Physical |
Volume | 82 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2000 |
MoE publication type | A1 Journal article-refereed |