Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer

M. Laitinen (Corresponding Author), T. Sajavaara, M. Rossi, J. Julin, Riikka Puurunen, Tommi Suni, T. Ishida, H Fujita, K. Arstila, B. Brijs, H.J. Whitlow

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)


Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al2O3 + TiO2 nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements 63Cu, 35Cl, 12C and 4He ions with energies ranging from 0.5 to 10 MeV, were used and depth profiles of the whole nanolaminate film could be analyzed down to 5 nm individual layer thickness.
Original languageEnglish
Pages (from-to)3021-3024
JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Issue number24
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed
Event10th European Conference on Accelerators in Applied Research and Technology (ECAART10) - Athens, Greece
Duration: 13 Sept 201017 Sept 2010


  • ToF-ERDA
  • ERD
  • depth profiling
  • Al2O3 and TiO2
  • nanolaminate
  • ALD


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