Keyphrases
3D Structure
100%
Atomic Layer Deposition
100%
Spectroscopic Analysis
100%
Time-of-flight Secondary Ion Mass Spectrometry (ToF-SIMS)
100%
HAXPES
100%
High Aspect Ratio Structure
100%
La-doped HfO2
100%
X-ray Photoelectron Spectroscopy
40%
X-ray Sources
40%
Hafnia
40%
Dopant Distribution
40%
Doped HfO2
40%
Structural Properties
20%
High Aspect Ratio
20%
Ratio Test
20%
Spectroscopic Measurement
20%
Data Integration
20%
New Platform
20%
Region of Interest
20%
Doping Concentration
20%
Imaging Data
20%
Stoichiometry
20%
HfO2
20%
Precise Measurement
20%
Spontaneous Polarization
20%
Step Coverage
20%
Planar Structure
20%
Doping Profile
20%
Doped Thin Films
20%
K X-ray Lines
20%
HfO2 Thin Films
20%
Orthorhombic Phase
20%
Strong Connections
20%
Ferroelectric Films
20%
Ferroelectric Field-effect Transistor (FeFET)
20%
Ferroelectric HfO2
20%
Hard X-ray Sources
20%
Precise Controlling
20%
Depth Penetration
20%
Remanent Polarization
20%
La Dopant
20%
Ferroelectric Properties
20%
Ultrathin Ferroelectric Films
20%
Ferroelectric Memory
20%
Polarization Value
20%
Advanced CMOS
20%
INIS
layers
100%
doped materials
100%
thin films
100%
deposition
100%
depth
100%
ions
100%
spectroscopy
100%
mass spectrometry
100%
time-of-flight method
100%
aspect ratio
66%
ferroelectric materials
66%
concentration
44%
x-ray photoelectron spectroscopy
33%
films
33%
x-ray sources
33%
data
22%
distribution
22%
polarization
22%
hard x radiation
22%
values
11%
comparative evaluations
11%
information
11%
applications
11%
walls
11%
stabilization
11%
randomness
11%
stoichiometry
11%
penetration depth
11%
field effect transistors
11%
orthorhombic lattices
11%
Engineering
Time-of-Flight
100%
Atomic Layer Deposition
100%
High Aspect Ratio
100%
Thin Films
100%
Dopants
50%
Ray Photoelectron Spectroscopy
50%
Ray Source
50%
Hard X-Rays
33%
Test Structure
16%
Field-Effect Transistor
16%
Penetration Depth
16%
Dopant Concentration
16%
Precise Measurement
16%
Spontaneous Polarization
16%
Region of Interest
16%
Structural Property
16%
Data Point
16%
Planar Structure
16%
Random Access Memory
16%
Reaction Stoichiometry
16%
Material Science
Doping (Additives)
100%
Thin Film Deposition
100%
Secondary Ion Mass Spectrometry
100%
Ferroelectric Material
75%
X-Ray Photoelectron Spectroscopy
75%
Thin Films
75%
Ferroelectric Film
50%
Structural Property
25%
Field Effect Transistors
25%
Ferroelectricity
25%
Film
25%