Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology

Raju Ahamed, Mikko Varonen, Dristy Parveg, Md Najmussadat, Mikko Kantanen, Kari A.I. Halonen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

This paper presents a high dynamic range E-band power detector in a 0.13 µm SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm2

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PublisherIEEE Institute of Electrical and Electronic Engineers
ISBN (Print)978-1-7281-3320-1
DOIs
Publication statusPublished - 2020
MoE publication typeA4 Article in a conference publication
Event52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Virtual, Online
Duration: 10 Oct 202021 Oct 2020

Conference

Conference52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020
CityVirtual, Online
Period10/10/2021/10/20

Keywords

  • BiCMOS
  • E-band
  • Heterojunction bipolar transistor (HBT)
  • Millimeter-wave
  • MMIC
  • Power detector

Fingerprint

Dive into the research topics of 'Design and analysis of an e-band power detector in 0.13 µm SiGe BiCMOS technology'. Together they form a unique fingerprint.

Cite this