Abstract
In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.
Original language | English |
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Title of host publication | EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 17-20 |
ISBN (Electronic) | 978-2-87487-060-6 |
ISBN (Print) | 978-1-7281-7040-4 |
Publication status | Published - Jan 2021 |
MoE publication type | A4 Article in a conference publication |
Event | 15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands Duration: 11 Jan 2021 → 12 Jan 2021 |
Conference
Conference | 15th European Microwave Integrated Circuits Conference, EuMIC 2020 |
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Country/Territory | Netherlands |
City | Utrecht |
Period | 11/01/21 → 12/01/21 |
Keywords
- BiCMOS
- Low Noise Amplifier (LNA)
- millimeter-wave
- MMIC
- SiGe