Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology

Md Najmussadat, Raju Ahamed, Mikko Varonen, Dristy Parveg, Yehia Tawfik, Kari A.I. Halonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    8 Citations (Scopus)

    Abstract

    In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz. The DC power consumption of this LNA is 97.2 mW with a supply voltage of 3V. This LNA so far represents the highest gain reported in SiGe BiCMOS technology around 240 GHz. The total chip area including the pads of this LNA is 0.45 mm2.
    Original languageEnglish
    Title of host publicationEuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages17-20
    ISBN (Electronic)978-2-87487-060-6
    ISBN (Print)978-1-7281-7040-4
    Publication statusPublished - Jan 2021
    MoE publication typeA4 Article in a conference publication
    Event15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands
    Duration: 11 Jan 202112 Jan 2021

    Conference

    Conference15th European Microwave Integrated Circuits Conference, EuMIC 2020
    Country/TerritoryNetherlands
    CityUtrecht
    Period11/01/2112/01/21

    Keywords

    • BiCMOS
    • Low Noise Amplifier (LNA)
    • millimeter-wave
    • MMIC
    • SiGe

    Fingerprint

    Dive into the research topics of 'Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology'. Together they form a unique fingerprint.

    Cite this