Design of a D-Band CMOS Amplifier Utilizing Coupled Slow-Wave Coplanar Waveguides

Dristy Parveg, Mikko Varonen, Denizhan Karaca, Ali Vahdati, Mikko Kantanen, Kari A.I. Halonen

    Research output: Contribution to journalArticleScientificpeer-review

    17 Citations (Scopus)
    227 Downloads (Pure)


    This paper validates a design and modeling methodology of coupled slow-wave waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that utilizes the CS-CPW for impedance matching. The robustness and feasibility of using the CS-CPW as a matching element in wideband millimeter-wave (mm-wave) silicon circuit designs are studied. Furthermore, the key design details of a mm-wave LNA are discussed. The designed monolithic microwave integrated circuit amplifier has a gain greater than 10 dB from 135 to 170 GHz with a peak gain of 15.7 dB at 160 GHz. The amplifier has a measured noise figure of 8.5 dB from 135 to 170 GHz, and an output-referred 1-dB compression point of -16.5 dBm at 160 GHz. The total power consumption of the amplifier is 32 mW.

    Original languageEnglish
    Pages (from-to)1359-1373
    Number of pages15
    JournalIEEE Transactions on Microwave Theory and Techniques
    Issue number3
    Publication statusPublished - 2018
    MoE publication typeNot Eligible


    • 140 GHz
    • 170 GHz
    • Amplifier
    • CMOS
    • CMOS technology
    • Coplanar waveguides
    • coupled slow-wave coplanar waveguide (CS-CPW)
    • coupled transmission lines
    • D-band
    • Impedance
    • low-noise amplifier (LNA)
    • Metals
    • millimeter wave integrated circuit
    • monolithic microwave integrated circuit (MMIC)
    • Silicon
    • silicon
    • slow-wave coplanar waveguide (S-CPW)
    • slow-wave coupled line
    • Strips
    • Substrates


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