Abstract
This paper validates a design and modeling methodology of coupled slow-wave waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that utilizes the CS-CPW for impedance matching. The robustness and feasibility of using the CS-CPW as a matching element in wideband millimeter-wave (mm-wave) silicon circuit designs are studied. Furthermore, the key design details of a mm-wave LNA are discussed. The designed monolithic microwave integrated circuit amplifier has a gain greater than 10 dB from 135 to 170 GHz with a peak gain of 15.7 dB at 160 GHz. The amplifier has a measured noise figure of 8.5 dB from 135 to 170 GHz, and an output-referred 1-dB compression point of -16.5 dBm at 160 GHz. The total power consumption of the amplifier is 32 mW.
| Original language | English |
|---|---|
| Pages (from-to) | 1359-1373 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 66 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2018 |
| MoE publication type | A1 Journal article-refereed |
Funding
This work was supported in part by the Academy of Finland projects through the FAMOS and MIDERI and in part by the Finnish Funding Agency for Innovation through the 5WAVE project. Author D. Parveg would like to thank the Nokia Foundation and the Finnish Society of Electronics Engineers (EIS) for supporting this paper.
Keywords
- 140 GHz
- 170 GHz
- Amplifier
- CMOS
- CMOS technology
- Coplanar waveguides
- coupled slow-wave coplanar waveguide (CS-CPW)
- coupled transmission lines
- D-band
- Impedance
- low-noise amplifier (LNA)
- Metals
- millimeter wave integrated circuit
- monolithic microwave integrated circuit (MMIC)
- Silicon
- silicon
- slow-wave coplanar waveguide (S-CPW)
- slow-wave coupled line
- Strips
- Substrates