Design of an E-band Doherty Power amplifier

Md Najmussadat, Raju Ahamed, Dristy Parveg, Mikko Varonen, Kari A.I. Halonen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

Original languageEnglish
Title of host publicationPRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages145-148
Number of pages4
ISBN (Electronic)978-1-5386-5387-6, 978-1-5386-5386-9
ISBN (Print)978-1-5386-5388-3
DOIs
Publication statusPublished - 8 Aug 2018
MoE publication typeA4 Article in a conference publication
Event14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 - Prague, Czech Republic
Duration: 2 Jul 20185 Jul 2018

Conference

Conference14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018
Country/TerritoryCzech Republic
CityPrague
Period2/07/185/07/18

Keywords

  • BiCMOS
  • Doherty Power Amplifier
  • Microstrip
  • Power Backoff
  • SiGe

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