Design of an E-band Doherty Power amplifier

Md Najmussadat, Raju Ahamed, Dristy Parveg, Mikko Varonen, Kari A.I. Halonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

    Original languageEnglish
    Title of host publicationPRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages145-148
    Number of pages4
    ISBN (Electronic)978-1-5386-5387-6, 978-1-5386-5386-9
    ISBN (Print)978-1-5386-5388-3
    DOIs
    Publication statusPublished - 8 Aug 2018
    MoE publication typeNot Eligible
    Event14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 - Prague, Czech Republic
    Duration: 2 Jul 20185 Jul 2018

    Conference

    Conference14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018
    CountryCzech Republic
    CityPrague
    Period2/07/185/07/18

    Fingerprint

    Doherty amplifiers
    power amplifiers
    Power amplifiers
    amplifiers
    power efficiency
    output
    power gain
    couplers
    direct current
    chips
    bandwidth
    Bandwidth

    Keywords

    • BiCMOS
    • Doherty Power Amplifier
    • Microstrip
    • Power Backoff
    • SiGe

    Cite this

    Najmussadat, M., Ahamed, R., Parveg, D., Varonen, M., & Halonen, K. A. I. (2018). Design of an E-band Doherty Power amplifier. In PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics (pp. 145-148). [8430350] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/PRIME.2018.8430350
    Najmussadat, Md ; Ahamed, Raju ; Parveg, Dristy ; Varonen, Mikko ; Halonen, Kari A.I. / Design of an E-band Doherty Power amplifier. PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. IEEE Institute of Electrical and Electronic Engineers , 2018. pp. 145-148
    @inproceedings{a630e31777a2453cba3eb1b2d76af512,
    title = "Design of an E-band Doherty Power amplifier",
    abstract = "This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2{\%}. This PA shows PAE of 17{\%} at P1dB and 11.6{\%} at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.",
    keywords = "BiCMOS, Doherty Power Amplifier, Microstrip, Power Backoff, SiGe",
    author = "Md Najmussadat and Raju Ahamed and Dristy Parveg and Mikko Varonen and Halonen, {Kari A.I.}",
    year = "2018",
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    Najmussadat, M, Ahamed, R, Parveg, D, Varonen, M & Halonen, KAI 2018, Design of an E-band Doherty Power amplifier. in PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics., 8430350, IEEE Institute of Electrical and Electronic Engineers , pp. 145-148, 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018, Prague, Czech Republic, 2/07/18. https://doi.org/10.1109/PRIME.2018.8430350

    Design of an E-band Doherty Power amplifier. / Najmussadat, Md; Ahamed, Raju; Parveg, Dristy; Varonen, Mikko; Halonen, Kari A.I.

    PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. IEEE Institute of Electrical and Electronic Engineers , 2018. p. 145-148 8430350.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Najmussadat, Md

    AU - Ahamed, Raju

    AU - Parveg, Dristy

    AU - Varonen, Mikko

    AU - Halonen, Kari A.I.

    PY - 2018/8/8

    Y1 - 2018/8/8

    N2 - This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

    AB - This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

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    Najmussadat M, Ahamed R, Parveg D, Varonen M, Halonen KAI. Design of an E-band Doherty Power amplifier. In PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. IEEE Institute of Electrical and Electronic Engineers . 2018. p. 145-148. 8430350 https://doi.org/10.1109/PRIME.2018.8430350