Design of an E-band Doherty Power amplifier

Md Najmussadat, Raju Ahamed, Dristy Parveg, Mikko Varonen, Kari A.I. Halonen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

Original languageEnglish
Title of host publicationPRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages145-148
Number of pages4
ISBN (Electronic)978-1-5386-5387-6, 978-1-5386-5386-9
ISBN (Print)978-1-5386-5388-3
DOIs
Publication statusPublished - 8 Aug 2018
MoE publication typeNot Eligible
Event14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 - Prague, Czech Republic
Duration: 2 Jul 20185 Jul 2018

Conference

Conference14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018
CountryCzech Republic
CityPrague
Period2/07/185/07/18

Fingerprint

Doherty amplifiers
power amplifiers
Power amplifiers
amplifiers
power efficiency
output
power gain
couplers
direct current
chips
bandwidth
Bandwidth

Keywords

  • BiCMOS
  • Doherty Power Amplifier
  • Microstrip
  • Power Backoff
  • SiGe

Cite this

Najmussadat, M., Ahamed, R., Parveg, D., Varonen, M., & Halonen, K. A. I. (2018). Design of an E-band Doherty Power amplifier. In PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics (pp. 145-148). [8430350] Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/PRIME.2018.8430350
Najmussadat, Md ; Ahamed, Raju ; Parveg, Dristy ; Varonen, Mikko ; Halonen, Kari A.I. / Design of an E-band Doherty Power amplifier. PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. Institute of Electrical and Electronic Engineers IEEE, 2018. pp. 145-148
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abstract = "This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2{\%}. This PA shows PAE of 17{\%} at P1dB and 11.6{\%} at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.",
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Najmussadat, M, Ahamed, R, Parveg, D, Varonen, M & Halonen, KAI 2018, Design of an E-band Doherty Power amplifier. in PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics., 8430350, Institute of Electrical and Electronic Engineers IEEE, pp. 145-148, 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018, Prague, Czech Republic, 2/07/18. https://doi.org/10.1109/PRIME.2018.8430350

Design of an E-band Doherty Power amplifier. / Najmussadat, Md; Ahamed, Raju; Parveg, Dristy; Varonen, Mikko; Halonen, Kari A.I.

PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. Institute of Electrical and Electronic Engineers IEEE, 2018. p. 145-148 8430350.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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N2 - This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

AB - This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

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Najmussadat M, Ahamed R, Parveg D, Varonen M, Halonen KAI. Design of an E-band Doherty Power amplifier. In PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. Institute of Electrical and Electronic Engineers IEEE. 2018. p. 145-148. 8430350 https://doi.org/10.1109/PRIME.2018.8430350