Design of an E-band Doherty Power amplifier

Md Najmussadat; Raju Ahamed; Dristy Parveg; Mikko Varonen; Kari A.I. Halonen

doi:10.1109/PRIME.2018.8430350

Design of an E-band Doherty Power amplifier

Md Najmussadat
, Raju Ahamed
, Dristy Parveg
, Mikko Varonen
, Kari A.I. Halonen

Aalto University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

4 Citations (Scopus)

Abstract

This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

Original language	English
Title of host publication	PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	145-148
Number of pages	4
ISBN (Electronic)	978-1-5386-5387-6, 978-1-5386-5386-9
ISBN (Print)	978-1-5386-5388-3
DOIs	https://doi.org/10.1109/PRIME.2018.8430350
Publication status	Published - 8 Aug 2018
MoE publication type	A4 Article in a conference publication
Event	14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 - Prague, Czech Republic Duration: 2 Jul 2018 → 5 Jul 2018

Conference

Conference	14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018
Country/Territory	Czech Republic
City	Prague
Period	2/07/18 → 5/07/18

Keywords

BiCMOS
Doherty Power Amplifier
Microstrip
Power Backoff
SiGe

Access to Document

10.1109/PRIME.2018.8430350

Cite this

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title = "Design of an E-band Doherty Power amplifier",

abstract = "This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2\%. This PA shows PAE of 17\% at P1dB and 11.6\% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.",

keywords = "BiCMOS, Doherty Power Amplifier, Microstrip, Power Backoff, SiGe",

author = "Md Najmussadat and Raju Ahamed and Dristy Parveg and Mikko Varonen and Halonen, \{Kari A.I.\}",

note = "Funding Information: ACKNOWLEDGMENT The authors would like to thank the Finnish Funding Agency for Innovation (Business Finland) for supporting this work through 5WAVE project. Publisher Copyright: {\textcopyright} 2018 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 ; Conference date: 02-07-2018 Through 05-07-2018",

year = "2018",

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doi = "10.1109/PRIME.2018.8430350",

language = "English",

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publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Najmussadat, M, Ahamed, R, Parveg, D , Varonen, M & Halonen, KAI 2018, Design of an E-band Doherty Power amplifier. in PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics., 8430350, IEEE Institute of Electrical and Electronic Engineers, pp. 145-148, 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018, Prague, Czech Republic, 2/07/18. https://doi.org/10.1109/PRIME.2018.8430350

Design of an E-band Doherty Power amplifier. / Najmussadat, Md; Ahamed, Raju; Parveg, Dristy et al.
PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. IEEE Institute of Electrical and Electronic Engineers, 2018. p. 145-148 8430350.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Design of an E-band Doherty Power amplifier

AU - Najmussadat, Md

AU - Ahamed, Raju

AU - Parveg, Dristy

AU - Varonen, Mikko

AU - Halonen, Kari A.I.

N1 - Funding Information: ACKNOWLEDGMENT The authors would like to thank the Finnish Funding Agency for Innovation (Business Finland) for supporting this work through 5WAVE project. Publisher Copyright: © 2018 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2018/8/8

Y1 - 2018/8/8

N2 - This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

AB - This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

KW - BiCMOS

KW - Doherty Power Amplifier

KW - Microstrip

KW - Power Backoff

KW - SiGe

UR - https://www.scopus.com/pages/publications/85052510817

U2 - 10.1109/PRIME.2018.8430350

DO - 10.1109/PRIME.2018.8430350

M3 - Conference article in proceedings

AN - SCOPUS:85052510817

SN - 978-1-5386-5388-3

SP - 145

EP - 148

BT - PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018

Y2 - 2 July 2018 through 5 July 2018

ER -

Design of an E-band Doherty Power amplifier

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