Design of capacitive RF mems power sensor

Tauno Vähä-Heikkilä; Jukka Kyynäräinen; Aarne Oja; Jussi Varis; Heikki Seppä

Design of capacitive RF mems power sensor

Tauno Vähä-Heikkilä, Jukka Kyynäräinen, Aarne Oja, Jussi Varis, Heikki Seppä

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

A novel inline type millimeter wave MEMS power sensor is presented. The electrostatic force due to the ms voltage across the transmission line conductors displaces the sensor electrode, and the movement can be detected capacitively. RF properties of the sensor can be optimized so that S11 is better than -30 dB and S21 less than 0.1 dB up to 45 GHz with a power resolution of -37 dBm.

Original language	English
Title of host publication	Digest of technical papers
Subtitle of host publication	URSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002
Editors	Jussi Säily, Sergei A. Tretyakov
Publisher	Helsinki University of Technology
Pages	201-203
ISBN (Print)	951-22-6170-7
Publication status	Published - 2002
MoE publication type	A4 Article in a conference publication

Publication series

Series	Helsinki University of Technology: Radio Laboratory publications. Report S
Number	257
ISSN	1456-3835

Cite this

Vähä-Heikkilä, Tauno ; Kyynäräinen, Jukka ; Oja, Aarne et al. / Design of capacitive RF mems power sensor. Digest of technical papers: URSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002. editor / Jussi Säily ; Sergei A. Tretyakov. Helsinki University of Technology, 2002. pp. 201-203 (Helsinki University of Technology: Radio Laboratory publications. Report S; No. 257).

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title = "Design of capacitive RF mems power sensor",

abstract = "A novel inline type millimeter wave MEMS power sensor is presented. The electrostatic force due to the ms voltage across the transmission line conductors displaces the sensor electrode, and the movement can be detected capacitively. RF properties of the sensor can be optimized so that S11 is better than -30 dB and S21 less than 0.1 dB up to 45 GHz with a power resolution of -37 dBm.",

author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Jukka Kyyn{\"a}r{\"a}inen and Aarne Oja and Jussi Varis and Heikki Sepp{\"a}",

year = "2002",

language = "English",

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series = "Helsinki University of Technology: Radio Laboratory publications. Report S",

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Vähä-Heikkilä, T , Kyynäräinen, J, Oja, A, Varis, J & Seppä, H 2002, Design of capacitive RF mems power sensor. in J Säily & SA Tretyakov (eds), Digest of technical papers: URSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002. Helsinki University of Technology, Helsinki University of Technology: Radio Laboratory publications. Report S, no. 257, pp. 201-203.

Design of capacitive RF mems power sensor. / Vähä-Heikkilä, Tauno ; Kyynäräinen, Jukka; Oja, Aarne et al.
Digest of technical papers: URSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002. ed. / Jussi Säily; Sergei A. Tretyakov. Helsinki University of Technology, 2002. p. 201-203 (Helsinki University of Technology: Radio Laboratory publications. Report S; No. 257).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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T1 - Design of capacitive RF mems power sensor

AU - Vähä-Heikkilä, Tauno

AU - Kyynäräinen, Jukka

AU - Oja, Aarne

AU - Varis, Jussi

AU - Seppä, Heikki

PY - 2002

Y1 - 2002

N2 - A novel inline type millimeter wave MEMS power sensor is presented. The electrostatic force due to the ms voltage across the transmission line conductors displaces the sensor electrode, and the movement can be detected capacitively. RF properties of the sensor can be optimized so that S11 is better than -30 dB and S21 less than 0.1 dB up to 45 GHz with a power resolution of -37 dBm.

AB - A novel inline type millimeter wave MEMS power sensor is presented. The electrostatic force due to the ms voltage across the transmission line conductors displaces the sensor electrode, and the movement can be detected capacitively. RF properties of the sensor can be optimized so that S11 is better than -30 dB and S21 less than 0.1 dB up to 45 GHz with a power resolution of -37 dBm.

M3 - Conference article in proceedings

SN - 951-22-6170-7

T3 - Helsinki University of Technology: Radio Laboratory publications. Report S

SP - 201

EP - 203

BT - Digest of technical papers

A2 - Säily, Jussi

A2 - Tretyakov, Sergei A.

PB - Helsinki University of Technology

ER -

Vähä-Heikkilä T , Kyynäräinen J, Oja A, Varis J, Seppä H. Design of capacitive RF mems power sensor. In Säily J, Tretyakov SA, editors, Digest of technical papers: URSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002. Helsinki University of Technology. 2002. p. 201-203. (Helsinki University of Technology: Radio Laboratory publications. Report S; No. 257).

Design of capacitive RF mems power sensor

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