Design of capacitive RF mems power sensor

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

A novel inline type millimeter wave MEMS power sensor is presented. The electrostatic force due to the ms voltage across the transmission line conductors displaces the sensor electrode, and the movement can be detected capacitively. RF properties of the sensor can be optimized so that S11 is better than -30 dB and S21 less than 0.1 dB up to 45 GHz with a power resolution of -37 dBm.
Original languageEnglish
Title of host publicationDigest of technical papers
Subtitle of host publicationURSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002
EditorsJussi Säily, Sergei A. Tretyakov
PublisherHelsinki University of Technology
Pages201-203
ISBN (Print)951-22-6170-7
Publication statusPublished - 2002
MoE publication typeA4 Article in a conference publication

Publication series

SeriesHelsinki University of Technology: Radio Laboratory publications. Report S
Number257
ISSN1456-3835

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    Vähä-Heikkilä, T., Kyynäräinen, J., Oja, A., Varis, J., & Seppä, H. (2002). Design of capacitive RF mems power sensor. In J. Säily, & S. A. Tretyakov (Eds.), Digest of technical papers: URSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002 (pp. 201-203). Helsinki University of Technology. Helsinki University of Technology: Radio Laboratory publications. Report S, No. 257