A novel inline type millimeter wave MEMS power sensor is presented. The electrostatic force due to the ms voltage across the transmission line conductors displaces the sensor electrode, and the movement can be detected capacitively. RF properties of the sensor can be optimized so that S11 is better than -30 dB and S21 less than 0.1 dB up to 45 GHz with a power resolution of -37 dBm.
|Title of host publication||Digest of technical papers|
|Subtitle of host publication||URSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002|
|Editors||Jussi Säily, Sergei A. Tretyakov|
|Publisher||Helsinki University of Technology|
|Publication status||Published - 2002|
|MoE publication type||A4 Article in a conference publication|
|Series||Helsinki University of Technology: Radio Laboratory publications. Report S|