Design of capacitive RF mems power sensor

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    A novel inline type millimeter wave MEMS power sensor is presented. The electrostatic force due to the ms voltage across the transmission line conductors displaces the sensor electrode, and the movement can be detected capacitively. RF properties of the sensor can be optimized so that S11 is better than -30 dB and S21 less than 0.1 dB up to 45 GHz with a power resolution of -37 dBm.
    Original languageEnglish
    Title of host publicationDigest of technical papers
    Subtitle of host publicationURSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002
    EditorsJussi Säily, Sergei A. Tretyakov
    PublisherHelsinki University of Technology
    Pages201-203
    ISBN (Print)951-22-6170-7
    Publication statusPublished - 2002
    MoE publication typeA4 Article in a conference publication

    Publication series

    SeriesHelsinki University of Technology: Radio Laboratory publications. Report S
    Number257
    ISSN1456-3835

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