Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology

Raju Ahamed, Mikko Varonen, Dristy Parveg, Jan Saijets, Kari A.I. Halonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver front-end in an 0.13 μm SiGe BiCMOS technology. The quarter-wave shunt SPDT switch is designed using reverse-saturated SiGe HBTs. The resulting switch exhibits an insertion loss of 2.1 dB, isolation of 26 dB, reflection coefficient better than 18 dB at 75 GHz and provides a bandwidth of more than 35 GHz. The designed switch is integrated with a single-in differential-output (SIDO) low noise amplifier (LNA) and utilized as input matching element of the LNA. The LNA utilizes a common-emitter amplifier at the first stage and a casocode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The resulting LNA with integrated switch achieves a gain and noise figure(NF) of 26 dB and 6.9 dB, respectively at 75 GHz with a 3 dB bandwidth of 12 GHz. Output referred 1-dB compression point of +5.5 dBm is achieved at 75 GHz. The designed integrated block consumes 45.5 mW of DC power and occupies an area of 720 μm × 580 μm excluding RF pads.
    Original languageEnglish
    Title of host publication2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017
    Subtitle of host publicationNORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings
    EditorsJari Nurmi, Ivan Ring Nielsen, Atila Alvandpour, Mark Vesterbacka, J. Jacob Wikner, Martin Nielsen-Lonn
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages1-5
    Number of pages5
    ISBN (Electronic)978-1-5386-2844-7
    ISBN (Print)978-1-5386-2845-4
    DOIs
    Publication statusPublished - 29 Nov 2017
    MoE publication typeA4 Article in a conference publication
    Event2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017: NORCHIP and International Symposium of System-on-Chip (SoC) - Linkoping, Sweden
    Duration: 24 Oct 201725 Oct 2017

    Conference

    Conference2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017
    CountrySweden
    CityLinkoping
    Period24/10/1725/10/17

    Keywords

    • BiCMOS
    • heterojunction bipolar transistor (HBT)
    • LNA
    • millimeter-wave
    • MMIC
    • reverse-saturation
    • SIGe
    • SPDT
    • transformer balun

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  • Cite this

    Ahamed, R., Varonen, M., Parveg, D., Saijets, J., & Halonen, K. A. I. (2017). Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. In J. Nurmi, I. R. Nielsen, A. Alvandpour, M. Vesterbacka, J. J. Wikner, & M. Nielsen-Lonn (Eds.), 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings (pp. 1-5). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/NORCHIP.2017.8124975