Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology

Raju Ahamed; Mikko Varonen; Dristy Parveg; Jan Saijets; Kari A.I. Halonen

doi:10.1109/NORCHIP.2017.8124975

Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology

Raju Ahamed, Mikko Varonen, Dristy Parveg, Jan Saijets, Kari A.I. Halonen

Aalto University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver front-end in an 0.13 μm SiGe BiCMOS technology. The quarter-wave shunt SPDT switch is designed using reverse-saturated SiGe HBTs. The resulting switch exhibits an insertion loss of 2.1 dB, isolation of 26 dB, reflection coefficient better than 18 dB at 75 GHz and provides a bandwidth of more than 35 GHz. The designed switch is integrated with a single-in differential-output (SIDO) low noise amplifier (LNA) and utilized as input matching element of the LNA. The LNA utilizes a common-emitter amplifier at the first stage and a casocode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The resulting LNA with integrated switch achieves a gain and noise figure(NF) of 26 dB and 6.9 dB, respectively at 75 GHz with a 3 dB bandwidth of 12 GHz. Output referred 1-dB compression point of +5.5 dBm is achieved at 75 GHz. The designed integrated block consumes 45.5 mW of DC power and occupies an area of 720 μm × 580 μm excluding RF pads.

Original language	English
Title of host publication	2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017
Subtitle of host publication	NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings
Editors	Jari Nurmi, Ivan Ring Nielsen, Atila Alvandpour, Mark Vesterbacka, J. Jacob Wikner, Martin Nielsen-Lonn
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1-5
Number of pages	5
ISBN (Electronic)	978-1-5386-2844-7
ISBN (Print)	978-1-5386-2845-4
DOIs	https://doi.org/10.1109/NORCHIP.2017.8124975
Publication status	Published - 29 Nov 2017
MoE publication type	A4 Article in a conference publication
Event	2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017: NORCHIP and International Symposium of System-on-Chip (SoC) - Linkoping, Sweden Duration: 24 Oct 2017 → 25 Oct 2017

Conference

Conference	2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017
Country/Territory	Sweden
City	Linkoping
Period	24/10/17 → 25/10/17

Keywords

BiCMOS
heterojunction bipolar transistor (HBT)
LNA
millimeter-wave
MMIC
reverse-saturation
SIGe
SPDT
transformer balun

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10.1109/NORCHIP.2017.8124975

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Ahamed, R., Varonen, M., Parveg, D., Saijets, J., & Halonen, K. A. I. (2017). Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. In J. Nurmi, I. R. Nielsen, A. Alvandpour, M. Vesterbacka, J. J. Wikner, & M. Nielsen-Lonn (Eds.), 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings (pp. 1-5). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/NORCHIP.2017.8124975

Ahamed, Raju ; Varonen, Mikko ; Parveg, Dristy et al. / Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings. editor / Jari Nurmi ; Ivan Ring Nielsen ; Atila Alvandpour ; Mark Vesterbacka ; J. Jacob Wikner ; Martin Nielsen-Lonn. IEEE Institute of Electrical and Electronic Engineers, 2017. pp. 1-5

@inproceedings{158ace77fdd74ca6b11fbabfa7d8f35f,

title = "Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology",

abstract = "This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver front-end in an 0.13 μm SiGe BiCMOS technology. The quarter-wave shunt SPDT switch is designed using reverse-saturated SiGe HBTs. The resulting switch exhibits an insertion loss of 2.1 dB, isolation of 26 dB, reflection coefficient better than 18 dB at 75 GHz and provides a bandwidth of more than 35 GHz. The designed switch is integrated with a single-in differential-output (SIDO) low noise amplifier (LNA) and utilized as input matching element of the LNA. The LNA utilizes a common-emitter amplifier at the first stage and a casocode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The resulting LNA with integrated switch achieves a gain and noise figure(NF) of 26 dB and 6.9 dB, respectively at 75 GHz with a 3 dB bandwidth of 12 GHz. Output referred 1-dB compression point of +5.5 dBm is achieved at 75 GHz. The designed integrated block consumes 45.5 mW of DC power and occupies an area of 720 μm × 580 μm excluding RF pads.",

keywords = "BiCMOS, heterojunction bipolar transistor (HBT), LNA, millimeter-wave, MMIC, reverse-saturation, SIGe, SPDT, transformer balun",

author = "Raju Ahamed and Mikko Varonen and Dristy Parveg and Jan Saijets and Halonen, {Kari A.I.}",

note = "Project: 5WAVE; 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017 : NORCHIP and International Symposium of System-on-Chip (SoC) ; Conference date: 24-10-2017 Through 25-10-2017",

year = "2017",

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doi = "10.1109/NORCHIP.2017.8124975",

language = "English",

isbn = "978-1-5386-2845-4",

pages = "1--5",

editor = "Jari Nurmi and Nielsen, {Ivan Ring} and Atila Alvandpour and Mark Vesterbacka and Wikner, {J. Jacob} and Martin Nielsen-Lonn",

booktitle = "2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Ahamed, R, Varonen, M, Parveg, D, Saijets, J & Halonen, KAI 2017, Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. in J Nurmi, IR Nielsen, A Alvandpour, M Vesterbacka, JJ Wikner & M Nielsen-Lonn (eds), 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings. IEEE Institute of Electrical and Electronic Engineers, pp. 1-5, 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Linkoping, Sweden, 24/10/17. https://doi.org/10.1109/NORCHIP.2017.8124975

Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. / Ahamed, Raju; Varonen, Mikko; Parveg, Dristy et al.
2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings. ed. / Jari Nurmi; Ivan Ring Nielsen; Atila Alvandpour; Mark Vesterbacka; J. Jacob Wikner; Martin Nielsen-Lonn. IEEE Institute of Electrical and Electronic Engineers, 2017. p. 1-5.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology

AU - Ahamed, Raju

AU - Varonen, Mikko

AU - Parveg, Dristy

AU - Saijets, Jan

AU - Halonen, Kari A.I.

N1 - Project: 5WAVE

PY - 2017/11/29

Y1 - 2017/11/29

N2 - This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver front-end in an 0.13 μm SiGe BiCMOS technology. The quarter-wave shunt SPDT switch is designed using reverse-saturated SiGe HBTs. The resulting switch exhibits an insertion loss of 2.1 dB, isolation of 26 dB, reflection coefficient better than 18 dB at 75 GHz and provides a bandwidth of more than 35 GHz. The designed switch is integrated with a single-in differential-output (SIDO) low noise amplifier (LNA) and utilized as input matching element of the LNA. The LNA utilizes a common-emitter amplifier at the first stage and a casocode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The resulting LNA with integrated switch achieves a gain and noise figure(NF) of 26 dB and 6.9 dB, respectively at 75 GHz with a 3 dB bandwidth of 12 GHz. Output referred 1-dB compression point of +5.5 dBm is achieved at 75 GHz. The designed integrated block consumes 45.5 mW of DC power and occupies an area of 720 μm × 580 μm excluding RF pads.

AB - This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver front-end in an 0.13 μm SiGe BiCMOS technology. The quarter-wave shunt SPDT switch is designed using reverse-saturated SiGe HBTs. The resulting switch exhibits an insertion loss of 2.1 dB, isolation of 26 dB, reflection coefficient better than 18 dB at 75 GHz and provides a bandwidth of more than 35 GHz. The designed switch is integrated with a single-in differential-output (SIDO) low noise amplifier (LNA) and utilized as input matching element of the LNA. The LNA utilizes a common-emitter amplifier at the first stage and a casocode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The resulting LNA with integrated switch achieves a gain and noise figure(NF) of 26 dB and 6.9 dB, respectively at 75 GHz with a 3 dB bandwidth of 12 GHz. Output referred 1-dB compression point of +5.5 dBm is achieved at 75 GHz. The designed integrated block consumes 45.5 mW of DC power and occupies an area of 720 μm × 580 μm excluding RF pads.

KW - BiCMOS

KW - heterojunction bipolar transistor (HBT)

KW - LNA

KW - millimeter-wave

KW - MMIC

KW - reverse-saturation

KW - SIGe

KW - SPDT

KW - transformer balun

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DO - 10.1109/NORCHIP.2017.8124975

M3 - Conference article in proceedings

SN - 978-1-5386-2845-4

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EP - 5

BT - 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017

A2 - Nurmi, Jari

A2 - Nielsen, Ivan Ring

A2 - Alvandpour, Atila

A2 - Vesterbacka, Mark

A2 - Wikner, J. Jacob

A2 - Nielsen-Lonn, Martin

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017

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Ahamed R, Varonen M, Parveg D, Saijets J, Halonen KAI. Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. In Nurmi J, Nielsen IR, Alvandpour A, Vesterbacka M, Wikner JJ, Nielsen-Lonn M, editors, 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings. IEEE Institute of Electrical and Electronic Engineers. 2017. p. 1-5 doi: 10.1109/NORCHIP.2017.8124975

Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology

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