Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology

Raju Ahamed, Mikko Varonen, Dristy Parveg, Jan Saijets, Kari A.I. Halonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver front-end in an 0.13 μm SiGe BiCMOS technology. The quarter-wave shunt SPDT switch is designed using reverse-saturated SiGe HBTs. The resulting switch exhibits an insertion loss of 2.1 dB, isolation of 26 dB, reflection coefficient better than 18 dB at 75 GHz and provides a bandwidth of more than 35 GHz. The designed switch is integrated with a single-in differential-output (SIDO) low noise amplifier (LNA) and utilized as input matching element of the LNA. The LNA utilizes a common-emitter amplifier at the first stage and a casocode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The resulting LNA with integrated switch achieves a gain and noise figure(NF) of 26 dB and 6.9 dB, respectively at 75 GHz with a 3 dB bandwidth of 12 GHz. Output referred 1-dB compression point of +5.5 dBm is achieved at 75 GHz. The designed integrated block consumes 45.5 mW of DC power and occupies an area of 720 μm × 580 μm excluding RF pads.
    Original languageEnglish
    Title of host publication2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017
    Subtitle of host publicationNORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings
    EditorsJari Nurmi, Ivan Ring Nielsen, Atila Alvandpour, Mark Vesterbacka, J. Jacob Wikner, Martin Nielsen-Lonn
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages1-5
    Number of pages5
    ISBN (Electronic)978-1-5386-2844-7
    ISBN (Print)978-1-5386-2845-4
    DOIs
    Publication statusPublished - 29 Nov 2017
    MoE publication typeA4 Article in a conference publication
    Event2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017: NORCHIP and International Symposium of System-on-Chip (SoC) - Linkoping, Sweden
    Duration: 24 Oct 201725 Oct 2017

    Conference

    Conference2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017
    CountrySweden
    CityLinkoping
    Period24/10/1725/10/17

    Fingerprint

    BiCMOS technology
    Low noise amplifiers
    Poles
    Switches
    Bandwidth
    Heterojunction bipolar transistors
    Noise figure
    Insertion losses
    Transceivers
    Topology

    Keywords

    • BiCMOS
    • heterojunction bipolar transistor (HBT)
    • LNA
    • millimeter-wave
    • MMIC
    • reverse-saturation
    • SIGe
    • SPDT
    • transformer balun

    Cite this

    Ahamed, R., Varonen, M., Parveg, D., Saijets, J., & Halonen, K. A. I. (2017). Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. In J. Nurmi, I. R. Nielsen, A. Alvandpour, M. Vesterbacka, J. J. Wikner, & M. Nielsen-Lonn (Eds.), 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings (pp. 1-5). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/NORCHIP.2017.8124975
    Ahamed, Raju ; Varonen, Mikko ; Parveg, Dristy ; Saijets, Jan ; Halonen, Kari A.I. / Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings. editor / Jari Nurmi ; Ivan Ring Nielsen ; Atila Alvandpour ; Mark Vesterbacka ; J. Jacob Wikner ; Martin Nielsen-Lonn. IEEE Institute of Electrical and Electronic Engineers , 2017. pp. 1-5
    @inproceedings{158ace77fdd74ca6b11fbabfa7d8f35f,
    title = "Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology",
    abstract = "This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver front-end in an 0.13 μm SiGe BiCMOS technology. The quarter-wave shunt SPDT switch is designed using reverse-saturated SiGe HBTs. The resulting switch exhibits an insertion loss of 2.1 dB, isolation of 26 dB, reflection coefficient better than 18 dB at 75 GHz and provides a bandwidth of more than 35 GHz. The designed switch is integrated with a single-in differential-output (SIDO) low noise amplifier (LNA) and utilized as input matching element of the LNA. The LNA utilizes a common-emitter amplifier at the first stage and a casocode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The resulting LNA with integrated switch achieves a gain and noise figure(NF) of 26 dB and 6.9 dB, respectively at 75 GHz with a 3 dB bandwidth of 12 GHz. Output referred 1-dB compression point of +5.5 dBm is achieved at 75 GHz. The designed integrated block consumes 45.5 mW of DC power and occupies an area of 720 μm × 580 μm excluding RF pads.",
    keywords = "BiCMOS, heterojunction bipolar transistor (HBT), LNA, millimeter-wave, MMIC, reverse-saturation, SIGe, SPDT, transformer balun",
    author = "Raju Ahamed and Mikko Varonen and Dristy Parveg and Jan Saijets and Halonen, {Kari A.I.}",
    note = "Project: 5WAVE",
    year = "2017",
    month = "11",
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    doi = "10.1109/NORCHIP.2017.8124975",
    language = "English",
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    pages = "1--5",
    editor = "Jari Nurmi and Nielsen, {Ivan Ring} and Atila Alvandpour and Mark Vesterbacka and Wikner, {J. Jacob} and Martin Nielsen-Lonn",
    booktitle = "2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    address = "United States",

    }

    Ahamed, R, Varonen, M, Parveg, D, Saijets, J & Halonen, KAI 2017, Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. in J Nurmi, IR Nielsen, A Alvandpour, M Vesterbacka, JJ Wikner & M Nielsen-Lonn (eds), 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings. IEEE Institute of Electrical and Electronic Engineers , pp. 1-5, 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Linkoping, Sweden, 24/10/17. https://doi.org/10.1109/NORCHIP.2017.8124975

    Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. / Ahamed, Raju; Varonen, Mikko; Parveg, Dristy; Saijets, Jan; Halonen, Kari A.I.

    2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings. ed. / Jari Nurmi; Ivan Ring Nielsen; Atila Alvandpour; Mark Vesterbacka; J. Jacob Wikner; Martin Nielsen-Lonn. IEEE Institute of Electrical and Electronic Engineers , 2017. p. 1-5.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology

    AU - Ahamed, Raju

    AU - Varonen, Mikko

    AU - Parveg, Dristy

    AU - Saijets, Jan

    AU - Halonen, Kari A.I.

    N1 - Project: 5WAVE

    PY - 2017/11/29

    Y1 - 2017/11/29

    N2 - This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver front-end in an 0.13 μm SiGe BiCMOS technology. The quarter-wave shunt SPDT switch is designed using reverse-saturated SiGe HBTs. The resulting switch exhibits an insertion loss of 2.1 dB, isolation of 26 dB, reflection coefficient better than 18 dB at 75 GHz and provides a bandwidth of more than 35 GHz. The designed switch is integrated with a single-in differential-output (SIDO) low noise amplifier (LNA) and utilized as input matching element of the LNA. The LNA utilizes a common-emitter amplifier at the first stage and a casocode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The resulting LNA with integrated switch achieves a gain and noise figure(NF) of 26 dB and 6.9 dB, respectively at 75 GHz with a 3 dB bandwidth of 12 GHz. Output referred 1-dB compression point of +5.5 dBm is achieved at 75 GHz. The designed integrated block consumes 45.5 mW of DC power and occupies an area of 720 μm × 580 μm excluding RF pads.

    AB - This paper presents the design of high-performance E-band single-pole double-through (SPDT) switch and low noise amplifier (LNA) as a part of transceiver front-end in an 0.13 μm SiGe BiCMOS technology. The quarter-wave shunt SPDT switch is designed using reverse-saturated SiGe HBTs. The resulting switch exhibits an insertion loss of 2.1 dB, isolation of 26 dB, reflection coefficient better than 18 dB at 75 GHz and provides a bandwidth of more than 35 GHz. The designed switch is integrated with a single-in differential-output (SIDO) low noise amplifier (LNA) and utilized as input matching element of the LNA. The LNA utilizes a common-emitter amplifier at the first stage and a casocode amplifier at the second stage to exploit the advantages of both common-emitter and cascode topologies. The resulting LNA with integrated switch achieves a gain and noise figure(NF) of 26 dB and 6.9 dB, respectively at 75 GHz with a 3 dB bandwidth of 12 GHz. Output referred 1-dB compression point of +5.5 dBm is achieved at 75 GHz. The designed integrated block consumes 45.5 mW of DC power and occupies an area of 720 μm × 580 μm excluding RF pads.

    KW - BiCMOS

    KW - heterojunction bipolar transistor (HBT)

    KW - LNA

    KW - millimeter-wave

    KW - MMIC

    KW - reverse-saturation

    KW - SIGe

    KW - SPDT

    KW - transformer balun

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    U2 - 10.1109/NORCHIP.2017.8124975

    DO - 10.1109/NORCHIP.2017.8124975

    M3 - Conference article in proceedings

    SN - 978-1-5386-2845-4

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    EP - 5

    BT - 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017

    A2 - Nurmi, Jari

    A2 - Nielsen, Ivan Ring

    A2 - Alvandpour, Atila

    A2 - Vesterbacka, Mark

    A2 - Wikner, J. Jacob

    A2 - Nielsen-Lonn, Martin

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Ahamed R, Varonen M, Parveg D, Saijets J, Halonen KAI. Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. In Nurmi J, Nielsen IR, Alvandpour A, Vesterbacka M, Wikner JJ, Nielsen-Lonn M, editors, 2017 IEEE Nordic Circuits and Systems Conference, NORCAS 2017: NORCHIP and International Symposium of System-on-Chip, SoC 2017, Proceedings. IEEE Institute of Electrical and Electronic Engineers . 2017. p. 1-5 https://doi.org/10.1109/NORCHIP.2017.8124975