Design optimization of negative charge pumps for IGBT driver ICs

Markku Åberg

doi:10.1088/0031-8949/1994/T54/012

Design optimization of negative charge pumps for IGBT driver ICs

Markku Åberg

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

An optimized design methodology for negative bias charge pumps is proposed. The circuit discussed gives an output voltage negative to the ground and can be used with n-substrate CMOS processes. Negative bias voltages are used in IGBT gate drivers. The analysis in this paper is done for a resistive load, but it can be applied also to capacitive loads in steady state cases with constant average current. The design rules are derived from theoretical calculations and verified with simulations.

Original language	English
Pages (from-to)	54-55
Number of pages	2
Journal	Physica Scripta
Volume	1994
Issue number	T54
DOIs	https://doi.org/10.1088/0031-8949/1994/T54/012
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed

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title = "Design optimization of negative charge pumps for IGBT driver ICs",

abstract = "An optimized design methodology for negative bias charge pumps is proposed. The circuit discussed gives an output voltage negative to the ground and can be used with n-substrate CMOS processes. Negative bias voltages are used in IGBT gate drivers. The analysis in this paper is done for a resistive load, but it can be applied also to capacitive loads in steady state cases with constant average current. The design rules are derived from theoretical calculations and verified with simulations.",

author = "Markku {\AA}berg",

year = "1994",

doi = "10.1088/0031-8949/1994/T54/012",

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T1 - Design optimization of negative charge pumps for IGBT driver ICs

AU - Åberg, Markku

PY - 1994

Y1 - 1994

N2 - An optimized design methodology for negative bias charge pumps is proposed. The circuit discussed gives an output voltage negative to the ground and can be used with n-substrate CMOS processes. Negative bias voltages are used in IGBT gate drivers. The analysis in this paper is done for a resistive load, but it can be applied also to capacitive loads in steady state cases with constant average current. The design rules are derived from theoretical calculations and verified with simulations.

AB - An optimized design methodology for negative bias charge pumps is proposed. The circuit discussed gives an output voltage negative to the ground and can be used with n-substrate CMOS processes. Negative bias voltages are used in IGBT gate drivers. The analysis in this paper is done for a resistive load, but it can be applied also to capacitive loads in steady state cases with constant average current. The design rules are derived from theoretical calculations and verified with simulations.

U2 - 10.1088/0031-8949/1994/T54/012

DO - 10.1088/0031-8949/1994/T54/012

M3 - Article

SN - 0031-8949

VL - 1994

SP - 54

EP - 55

JO - Physica Scripta

JF - Physica Scripta

IS - T54

ER -

Design optimization of negative charge pumps for IGBT driver ICs

Abstract

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