Design optimization of negative charge pumps for IGBT driver ICs

Markku Åberg

Research output: Contribution to journalArticleScientificpeer-review

Abstract

An optimized design methodology for negative bias charge pumps is proposed. The circuit discussed gives an output voltage negative to the ground and can be used with n-substrate CMOS processes. Negative bias voltages are used in IGBT gate drivers. The analysis in this paper is done for a resistive load, but it can be applied also to capacitive loads in steady state cases with constant average current. The design rules are derived from theoretical calculations and verified with simulations.
Original languageEnglish
Pages (from-to)54-55
Number of pages2
JournalPhysica Scripta
Volume1994
Issue numberT54
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

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design optimization
Pump
Driver
Charge
pumps
electric potential
Voltage
CMOS
Design Rules
methodology
Design Methodology
output
Substrate
simulation
Output
Simulation

Cite this

Åberg, Markku. / Design optimization of negative charge pumps for IGBT driver ICs. In: Physica Scripta. 1994 ; Vol. 1994, No. T54. pp. 54-55.
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abstract = "An optimized design methodology for negative bias charge pumps is proposed. The circuit discussed gives an output voltage negative to the ground and can be used with n-substrate CMOS processes. Negative bias voltages are used in IGBT gate drivers. The analysis in this paper is done for a resistive load, but it can be applied also to capacitive loads in steady state cases with constant average current. The design rules are derived from theoretical calculations and verified with simulations.",
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Design optimization of negative charge pumps for IGBT driver ICs. / Åberg, Markku.

In: Physica Scripta, Vol. 1994, No. T54, 1994, p. 54-55.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Design optimization of negative charge pumps for IGBT driver ICs

AU - Åberg, Markku

PY - 1994

Y1 - 1994

N2 - An optimized design methodology for negative bias charge pumps is proposed. The circuit discussed gives an output voltage negative to the ground and can be used with n-substrate CMOS processes. Negative bias voltages are used in IGBT gate drivers. The analysis in this paper is done for a resistive load, but it can be applied also to capacitive loads in steady state cases with constant average current. The design rules are derived from theoretical calculations and verified with simulations.

AB - An optimized design methodology for negative bias charge pumps is proposed. The circuit discussed gives an output voltage negative to the ground and can be used with n-substrate CMOS processes. Negative bias voltages are used in IGBT gate drivers. The analysis in this paper is done for a resistive load, but it can be applied also to capacitive loads in steady state cases with constant average current. The design rules are derived from theoretical calculations and verified with simulations.

U2 - 10.1088/0031-8949/1994/T54/012

DO - 10.1088/0031-8949/1994/T54/012

M3 - Article

VL - 1994

SP - 54

EP - 55

JO - Physica Scripta

JF - Physica Scripta

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