Designing Antennas and RF Components at 110-330 GHz Using IPD Technology

Muhammad Ibrahim; Kimmo Rasilainen; Jan Saijets; Pekka Rantakari; Aarno Parssinen; Marko E. Leinonen

doi:10.1109/ECTC51687.2025.00247

Designing Antennas and RF Components at 110-330 GHz Using IPD Technology

Muhammad Ibrahim
, Kimmo Rasilainen
, Jan Saijets
, Pekka Rantakari
, Aarno Parssinen
, Marko E. Leinonen

University of Oulu

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

This work analyses the performance of passive devices designed for the frequency range of 110-330 GHz using integrated passive device technology based on a silicon substrate. The investigated designs include microstrip (MS), coplanar waveguide (CPW), grounded coplanar waveguide (GCPW) transmission lines of various lengths, as well as three single-element microstrip patch antennas designed at 166, 234 and 302 GHz, respectively. Different designs are studied using both simulations and on-wafer measurements. Ground-signal-ground (GSG) radio frequency probes with 100-μm pitch are used to measure both transmission lines and antenna structures. Measurements show that the CPW line has the lowest insertion loss among all studied transmission lines. Placing vias in different arrangements in the GCPW line shows limited effects up to 220 GHz. The antenna structures highlighted the significance of proper material modelling for the frequency response. Due to measurement setup limitations, only the impedance matching of the antennas is measured.

Original language	English
Title of host publication	IEEE 75th Electronic Components and Technology Conference, ECTC 2025
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1426-1433
Number of pages	8
ISBN (Electronic)	9798331539320
ISBN (Print)	979-8-3315-3933-7
DOIs	https://doi.org/10.1109/ECTC51687.2025.00247
Publication status	Published - 2025
MoE publication type	A4 Article in a conference publication
Event	75th IEEE Electronic Components and Technology Conference, ECTC 2025 - Dallas, United States Duration: 27 May 2025 → 30 May 2025

Conference

Conference	75th IEEE Electronic Components and Technology Conference, ECTC 2025
Country/Territory	United States
City	Dallas
Period	27/05/25 → 30/05/25

Funding

This work was supported by Business Finland through the RF Sampo project (grant no. 2993/31/2021) and the TeraFront project (grant no. 8398/31/2022), and in part by 6G Flagship (grant no. 369116) funded by the Research Council of Finland. Okmetic is acknowledged for supplying the used Si wafers. Keysight Inc. has supported the research by donating measurement equipment.

Keywords

6G
IPD technology
microstrip patch antennas
sub-THz
transmission line
via transition

Access to Document

10.1109/ECTC51687.2025.00247

Cite this

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title = "Designing Antennas and RF Components at 110-330 GHz Using IPD Technology",

abstract = "This work analyses the performance of passive devices designed for the frequency range of 110-330 GHz using integrated passive device technology based on a silicon substrate. The investigated designs include microstrip (MS), coplanar waveguide (CPW), grounded coplanar waveguide (GCPW) transmission lines of various lengths, as well as three single-element microstrip patch antennas designed at 166, 234 and 302 GHz, respectively. Different designs are studied using both simulations and on-wafer measurements. Ground-signal-ground (GSG) radio frequency probes with 100-μm pitch are used to measure both transmission lines and antenna structures. Measurements show that the CPW line has the lowest insertion loss among all studied transmission lines. Placing vias in different arrangements in the GCPW line shows limited effects up to 220 GHz. The antenna structures highlighted the significance of proper material modelling for the frequency response. Due to measurement setup limitations, only the impedance matching of the antennas is measured.",

keywords = "6G, IPD technology, microstrip patch antennas, sub-THz, transmission line, via transition",

author = "Muhammad Ibrahim and Kimmo Rasilainen and Jan Saijets and Pekka Rantakari and Aarno Parssinen and Leinonen, \{Marko E.\}",

year = "2025",

doi = "10.1109/ECTC51687.2025.00247",

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booktitle = "IEEE 75th Electronic Components and Technology Conference, ECTC 2025",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "75th IEEE Electronic Components and Technology Conference, ECTC 2025 ; Conference date: 27-05-2025 Through 30-05-2025",

}

Ibrahim, M, Rasilainen, K, Saijets, J , Rantakari, P, Parssinen, A & Leinonen, ME 2025, Designing Antennas and RF Components at 110-330 GHz Using IPD Technology. in IEEE 75th Electronic Components and Technology Conference, ECTC 2025. IEEE Institute of Electrical and Electronic Engineers, pp. 1426-1433, 75th IEEE Electronic Components and Technology Conference, ECTC 2025, Dallas, United States, 27/05/25. https://doi.org/10.1109/ECTC51687.2025.00247

Designing Antennas and RF Components at 110-330 GHz Using IPD Technology. / Ibrahim, Muhammad; Rasilainen, Kimmo; Saijets, Jan et al.
IEEE 75th Electronic Components and Technology Conference, ECTC 2025. IEEE Institute of Electrical and Electronic Engineers, 2025. p. 1426-1433.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Ibrahim, Muhammad

AU - Rasilainen, Kimmo

AU - Saijets, Jan

AU - Rantakari, Pekka

AU - Parssinen, Aarno

AU - Leinonen, Marko E.

PY - 2025

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N2 - This work analyses the performance of passive devices designed for the frequency range of 110-330 GHz using integrated passive device technology based on a silicon substrate. The investigated designs include microstrip (MS), coplanar waveguide (CPW), grounded coplanar waveguide (GCPW) transmission lines of various lengths, as well as three single-element microstrip patch antennas designed at 166, 234 and 302 GHz, respectively. Different designs are studied using both simulations and on-wafer measurements. Ground-signal-ground (GSG) radio frequency probes with 100-μm pitch are used to measure both transmission lines and antenna structures. Measurements show that the CPW line has the lowest insertion loss among all studied transmission lines. Placing vias in different arrangements in the GCPW line shows limited effects up to 220 GHz. The antenna structures highlighted the significance of proper material modelling for the frequency response. Due to measurement setup limitations, only the impedance matching of the antennas is measured.

AB - This work analyses the performance of passive devices designed for the frequency range of 110-330 GHz using integrated passive device technology based on a silicon substrate. The investigated designs include microstrip (MS), coplanar waveguide (CPW), grounded coplanar waveguide (GCPW) transmission lines of various lengths, as well as three single-element microstrip patch antennas designed at 166, 234 and 302 GHz, respectively. Different designs are studied using both simulations and on-wafer measurements. Ground-signal-ground (GSG) radio frequency probes with 100-μm pitch are used to measure both transmission lines and antenna structures. Measurements show that the CPW line has the lowest insertion loss among all studied transmission lines. Placing vias in different arrangements in the GCPW line shows limited effects up to 220 GHz. The antenna structures highlighted the significance of proper material modelling for the frequency response. Due to measurement setup limitations, only the impedance matching of the antennas is measured.

KW - 6G

KW - IPD technology

KW - microstrip patch antennas

KW - sub-THz

KW - transmission line

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DO - 10.1109/ECTC51687.2025.00247

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BT - IEEE 75th Electronic Components and Technology Conference, ECTC 2025

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 75th IEEE Electronic Components and Technology Conference, ECTC 2025

Y2 - 27 May 2025 through 30 May 2025

ER -

Designing Antennas and RF Components at 110-330 GHz Using IPD Technology

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