Determination of doping and temperature-dependent elastic constants of degenerately doped silicon from MEMS resonators

    Research output: Contribution to journalArticleScientificpeer-review

    33 Citations (Scopus)

    Abstract

    Elastic constants c11, c12, and c44 of degenerately doped silicon are studied experimentally as a function of the doping level and temperature. First-and second-order temperature coefficients of the elastic constants are extracted from measured resonance frequencies of a set of MEMS resonators fabricated on seven different wafers doped with phosphorus (carrier concentrations 4.1, 4.7, and 7.5 x 1019 cm -3), arsenic (1.7 and 2.5 x 1019 cm-3), or boron (0.6 and 3 * 1019 cm-3). Measurements cover a temperature range from-40°C to +85°C. It is found that the linear temperature coefficient of the shear elastic parameter c11- c>sub>12 is zero at n-type doping level of n ~ 2 x 1019 cm -3, and that it increases to more than 40 ppm/K with increasing doping. This observation implies that the frequency of many types of resonance modes, including extensional bulk modes and flexural modes, can be temperature compensated to first order. The second-order temperature coefficient of c 11-c12 is found to decrease by 40% in magnitude when n-type doping is increased from 4.1 to 7.5 * 1019 cm -3. Results of this study enable calculation of the frequency drift of an arbitrary silicon resonator design with an accuracy of ±25 ppm between the calculated and real(ized) values over T =-40°C to +85°C at the doping levels covered in this work. Absolute frequency can be estimated with an accuracy of ±1000 ppm
    Original languageEnglish
    Pages (from-to)1063-1074
    JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
    Volume61
    Issue number7
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

      Fingerprint

    Cite this