Conduction and valence band discontinuities were determined in the strained AlxIn1−xP/InP heterojunction system by absorption measurements from multiquantum well (MQW) and superlattice (SL) structures. It was found that the conduction band offsets were 0.337 and 0.260 eV for systems having Al concentrations of x=0.20 (MQW) and x=0.15 (SL), respectively. The valence band discontinuities were 85 and 49 meV for the heavy‐hole valence band and −29 and −35 meV for the light‐hole valence band, respectively, i.e., the light‐hole valence band of AlxIn1−xP forms a staggered type II heterojunction with InP.
Lammasniemi, J., Tappura, K., & Smekalin, K. (1994). Determination of heterojunction band discontinuities in strained AlxIn1-xP/lnP systems. Applied Physics Letters, 65(20), . https://doi.org/10.1063/1.112643