Determination of heterojunction band discontinuities in strained AlxIn1-xP/lnP systems

J. Lammasniemi, K. Tappura, K. Smekalin

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Abstract

Conduction and valence band discontinuities were determined in the strained AlxIn1−xP/InP heterojunction system by absorption measurements from multiquantum well (MQW) and superlattice (SL) structures. It was found that the conduction band offsets were 0.337 and 0.260 eV for systems having Al concentrations of x=0.20 (MQW) and x=0.15 (SL), respectively. The valence band discontinuities were 85 and 49 meV for the heavy‐hole valence band and −29 and −35 meV for the light‐hole valence band, respectively, i.e., the light‐hole valence band of AlxIn1−xP forms a staggered type II heterojunction with InP.
Original languageEnglish
Article number2574
JournalApplied Physics Letters
Volume65
Issue number20
DOIs
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

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heterojunctions
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title = "Determination of heterojunction band discontinuities in strained AlxIn1-xP/lnP systems",
abstract = "Conduction and valence band discontinuities were determined in the strained AlxIn1−xP/InP heterojunction system by absorption measurements from multiquantum well (MQW) and superlattice (SL) structures. It was found that the conduction band offsets were 0.337 and 0.260 eV for systems having Al concentrations of x=0.20 (MQW) and x=0.15 (SL), respectively. The valence band discontinuities were 85 and 49 meV for the heavy‐hole valence band and −29 and −35 meV for the light‐hole valence band, respectively, i.e., the light‐hole valence band of AlxIn1−xP forms a staggered type II heterojunction with InP.",
author = "J. Lammasniemi and K. Tappura and K. Smekalin",
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Determination of heterojunction band discontinuities in strained AlxIn1-xP/lnP systems. / Lammasniemi, J.; Tappura, K.; Smekalin, K.

In: Applied Physics Letters, Vol. 65, No. 20, 2574, 1994.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Determination of heterojunction band discontinuities in strained AlxIn1-xP/lnP systems

AU - Lammasniemi, J.

AU - Tappura, K.

AU - Smekalin, K.

PY - 1994

Y1 - 1994

N2 - Conduction and valence band discontinuities were determined in the strained AlxIn1−xP/InP heterojunction system by absorption measurements from multiquantum well (MQW) and superlattice (SL) structures. It was found that the conduction band offsets were 0.337 and 0.260 eV for systems having Al concentrations of x=0.20 (MQW) and x=0.15 (SL), respectively. The valence band discontinuities were 85 and 49 meV for the heavy‐hole valence band and −29 and −35 meV for the light‐hole valence band, respectively, i.e., the light‐hole valence band of AlxIn1−xP forms a staggered type II heterojunction with InP.

AB - Conduction and valence band discontinuities were determined in the strained AlxIn1−xP/InP heterojunction system by absorption measurements from multiquantum well (MQW) and superlattice (SL) structures. It was found that the conduction band offsets were 0.337 and 0.260 eV for systems having Al concentrations of x=0.20 (MQW) and x=0.15 (SL), respectively. The valence band discontinuities were 85 and 49 meV for the heavy‐hole valence band and −29 and −35 meV for the light‐hole valence band, respectively, i.e., the light‐hole valence band of AlxIn1−xP forms a staggered type II heterojunction with InP.

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JO - Applied Physics Letters

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