Determinaton of some nonlinear transistor model parameters by using periodic time domain measurements

Markku Sipilä, Kari Lehtinen, Veikko Porra, Martti Valtonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review


    Accurate active device models are essential for reliable circuit simulation, necessary in the design of modern integrated circuits. The trend towards higher frequencies places an increasing demand on models with good accuracy in the UHF and microwave regions. Nonlinear high frequency models are needed in the computer aided design of communication subsystems, for example power amplifiers and mixers. Such models are also imperative in the time domain simulation of fast digital circuits used in supercomputers. A good nonlinear high frequency model should ideally predict correctly both the DC and large si nal AC behavior of the device. It should also give correct small signal S-parameters Traditional nonlinear models, for example the Gummel-Poon model for bipolar transistors.
    Original languageEnglish
    Title of host publication32nd ARFTG Conference Digest
    PublisherIEEE Institute of Electrical and Electronic Engineers
    ISBN (Electronic)978-1-6654-5013-3
    Publication statusPublished - 1989
    MoE publication typeA4 Article in a conference publication
    Event32nd ARFTG Conference - Tempe, United States
    Duration: 1 Dec 19882 Dec 1988


    Conference32nd ARFTG Conference
    Country/TerritoryUnited States


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