Determinaton of some nonlinear transistor model parameters by using periodic time domain measurements

Markku Sipilä; Kari Lehtinen; Veikko Porra; Martti Valtonen

doi:10.1109/ARFTG.1988.323921

Determinaton of some nonlinear transistor model parameters by using periodic time domain measurements

Markku Sipilä, Kari Lehtinen, Veikko Porra, Martti Valtonen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Accurate active device models are essential for reliable circuit simulation, necessary in the design of modern integrated circuits. The trend towards higher frequencies places an increasing demand on models with good accuracy in the UHF and microwave regions. Nonlinear high frequency models are needed in the computer aided design of communication subsystems, for example power amplifiers and mixers. Such models are also imperative in the time domain simulation of fast digital circuits used in supercomputers. A good nonlinear high frequency model should ideally predict correctly both the DC and large si nal AC behavior of the device. It should also give correct small signal S-parameters Traditional nonlinear models, for example the Gummel-Poon model for bipolar transistors.

Original language	English
Title of host publication	32nd ARFTG Conference Digest
Pages	100-109
DOIs	https://doi.org/10.1109/ARFTG.1988.323921
Publication status	Published - 1989
MoE publication type	A4 Article in a conference publication
Event	32nd ARFTG Conference - Tempe, United States Duration: 1 Dec 1988 → 2 Dec 1988

Conference

Conference	32nd ARFTG Conference
Country	United States
City	Tempe
Period	1/12/88 → 2/12/88

Access to Document

10.1109/ARFTG.1988.323921

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Sipilä, M., Lehtinen, K., Porra, V., & Valtonen, M. (1989). Determinaton of some nonlinear transistor model parameters by using periodic time domain measurements. In 32nd ARFTG Conference Digest (pp. 100-109) https://doi.org/10.1109/ARFTG.1988.323921

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abstract = "Accurate active device models are essential for reliable circuit simulation, necessary in the design of modern integrated circuits. The trend towards higher frequencies places an increasing demand on models with good accuracy in the UHF and microwave regions. Nonlinear high frequency models are needed in the computer aided design of communication subsystems, for example power amplifiers and mixers. Such models are also imperative in the time domain simulation of fast digital circuits used in supercomputers. A good nonlinear high frequency model should ideally predict correctly both the DC and large si nal AC behavior of the device. It should also give correct small signal S-parameters Traditional nonlinear models, for example the Gummel-Poon model for bipolar transistors.",

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language = "English",

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AU - Sipilä, Markku

AU - Lehtinen, Kari

AU - Porra, Veikko

AU - Valtonen, Martti

PY - 1989

Y1 - 1989

N2 - Accurate active device models are essential for reliable circuit simulation, necessary in the design of modern integrated circuits. The trend towards higher frequencies places an increasing demand on models with good accuracy in the UHF and microwave regions. Nonlinear high frequency models are needed in the computer aided design of communication subsystems, for example power amplifiers and mixers. Such models are also imperative in the time domain simulation of fast digital circuits used in supercomputers. A good nonlinear high frequency model should ideally predict correctly both the DC and large si nal AC behavior of the device. It should also give correct small signal S-parameters Traditional nonlinear models, for example the Gummel-Poon model for bipolar transistors.

AB - Accurate active device models are essential for reliable circuit simulation, necessary in the design of modern integrated circuits. The trend towards higher frequencies places an increasing demand on models with good accuracy in the UHF and microwave regions. Nonlinear high frequency models are needed in the computer aided design of communication subsystems, for example power amplifiers and mixers. Such models are also imperative in the time domain simulation of fast digital circuits used in supercomputers. A good nonlinear high frequency model should ideally predict correctly both the DC and large si nal AC behavior of the device. It should also give correct small signal S-parameters Traditional nonlinear models, for example the Gummel-Poon model for bipolar transistors.

U2 - 10.1109/ARFTG.1988.323921

DO - 10.1109/ARFTG.1988.323921

M3 - Conference article in proceedings

SN - 0-7803-5686-1

SP - 100

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BT - 32nd ARFTG Conference Digest

T2 - 32nd ARFTG Conference

Y2 - 1 December 1988 through 2 December 1988

ER -