Determinaton of some nonlinear transistor model parameters by using periodic time domain measurements

Markku Sipilä, Kari Lehtinen, Veikko Porra, Martti Valtonen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    Accurate active device models are essential for reliable circuit simulation, necessary in the design of modern integrated circuits. The trend towards higher frequencies places an increasing demand on models with good accuracy in the UHF and microwave regions. Nonlinear high frequency models are needed in the computer aided design of communication subsystems, for example power amplifiers and mixers. Such models are also imperative in the time domain simulation of fast digital circuits used in supercomputers. A good nonlinear high frequency model should ideally predict correctly both the DC and large si nal AC behavior of the device. It should also give correct small signal S-parameters Traditional nonlinear models, for example the Gummel-Poon model for bipolar transistors.
    Original languageEnglish
    Title of host publication32nd ARFTG Conference Digest
    Pages100-109
    DOIs
    Publication statusPublished - 1989
    MoE publication typeA4 Article in a conference publication
    Event32nd ARFTG Conference - Tempe, United States
    Duration: 1 Dec 19882 Dec 1988

    Conference

    Conference32nd ARFTG Conference
    CountryUnited States
    CityTempe
    Period1/12/882/12/88

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  • Cite this

    Sipilä, M., Lehtinen, K., Porra, V., & Valtonen, M. (1989). Determinaton of some nonlinear transistor model parameters by using periodic time domain measurements. In 32nd ARFTG Conference Digest (pp. 100-109) https://doi.org/10.1109/ARFTG.1988.323921