Abstract
Accurate active device models are essential for reliable circuit simulation, necessary in the design of modern integrated circuits. The trend towards higher frequencies places an increasing demand on models with good accuracy in the UHF and microwave regions. Nonlinear high frequency models are needed in the computer aided design of communication subsystems, for example power amplifiers and mixers. Such models are also imperative in the time domain simulation of fast digital circuits used in supercomputers. A good nonlinear high frequency model should ideally predict correctly both the DC and large si nal AC behavior of the device. It should also give correct small signal S-parameters Traditional nonlinear models, for example the Gummel-Poon model for bipolar transistors.
Original language | English |
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Title of host publication | 32nd ARFTG Conference Digest |
Pages | 100-109 |
DOIs | |
Publication status | Published - 1989 |
MoE publication type | A4 Article in a conference publication |
Event | 32nd ARFTG Conference - Tempe, United States Duration: 1 Dec 1988 → 2 Dec 1988 |
Conference
Conference | 32nd ARFTG Conference |
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Country | United States |
City | Tempe |
Period | 1/12/88 → 2/12/88 |