Deuterium diffusion in silicon-doped diamondlike carbon films

E. Vainonen-Ahlgren; T. Ahlgren; Jari Likonen; Sari Lehto; T. Sajavaara; W. Rydman; J. Keinonen; C. Wu

doi:10.1103/PhysRevB.63.045406

Deuterium diffusion in silicon-doped diamondlike carbon films

E. Vainonen-Ahlgren (Corresponding Author), T. Ahlgren, Jari Likonen, Sari Lehto, T. Sajavaara, W. Rydman, J. Keinonen, C. Wu

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic-recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5±0.2, 0.7±0.2, 0.6±0.2, and 1.2±0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.

Original language	English
Article number	045406
Number of pages	7
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	63
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.63.045406
Publication status	Published - 2001
MoE publication type	A1 Journal article-refereed

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10.1103/PhysRevB.63.045406

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title = "Deuterium diffusion in silicon-doped diamondlike carbon films",

abstract = "Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic-recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5±0.2, 0.7±0.2, 0.6±0.2, and 1.2±0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.",

author = "E. Vainonen-Ahlgren and T. Ahlgren and Jari Likonen and Sari Lehto and T. Sajavaara and W. Rydman and J. Keinonen and C. Wu",

year = "2001",

doi = "10.1103/PhysRevB.63.045406",

language = "English",

volume = "63",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society (APS)",

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TY - JOUR

T1 - Deuterium diffusion in silicon-doped diamondlike carbon films

AU - Vainonen-Ahlgren, E.

AU - Ahlgren, T.

AU - Likonen, Jari

AU - Lehto, Sari

AU - Sajavaara, T.

AU - Rydman, W.

AU - Keinonen, J.

AU - Wu, C.

PY - 2001

Y1 - 2001

N2 - Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic-recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5±0.2, 0.7±0.2, 0.6±0.2, and 1.2±0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.

AB - Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic-recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5±0.2, 0.7±0.2, 0.6±0.2, and 1.2±0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.

U2 - 10.1103/PhysRevB.63.045406

DO - 10.1103/PhysRevB.63.045406

M3 - Article

SN - 2469-9950

VL - 63

JO - Physical Review B

JF - Physical Review B

IS - 4

M1 - 045406

ER -

Deuterium diffusion in silicon-doped diamondlike carbon films

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