Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic-recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5±0.2, 0.7±0.2, 0.6±0.2, and 1.2±0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.
|Number of pages||7|
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 2001|
|MoE publication type||A1 Journal article-refereed|
Vainonen-Ahlgren, E., Ahlgren, T., Likonen, J., Lehto, S., Sajavaara, T., Rydman, W., Keinonen, J., & Wu, C. (2001). Deuterium diffusion in silicon-doped diamondlike carbon films. Physical Review B: Condensed Matter and Materials Physics, 63(4), . https://doi.org/10.1103/PhysRevB.63.045406