Deuterium diffusion in silicon-doped diamondlike carbon films

E. Vainonen-Ahlgren (Corresponding Author), T. Ahlgren, Jari Likonen, Sari Lehto, T. Sajavaara, W. Rydman, J. Keinonen, C. Wu

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    3 Citations (Scopus)

    Abstract

    Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic-recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5±0.2, 0.7±0.2, 0.6±0.2, and 1.2±0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.
    Original languageEnglish
    Article number045406
    Number of pages7
    JournalPhysical Review B: Condensed Matter and Materials Physics
    Volume63
    Issue number4
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

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