Deuterium diffusion in silicon-doped diamondlike carbon films

E. Vainonen-Ahlgren (Corresponding Author), T. Ahlgren, Jari Likonen, Sari Lehto, T. Sajavaara, W. Rydman, J. Keinonen, C. Wu

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)

    Abstract

    Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic-recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5±0.2, 0.7±0.2, 0.6±0.2, and 1.2±0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.
    Original languageEnglish
    Article number045406
    Number of pages7
    JournalPhysical Review B: Condensed Matter and Materials Physics
    Volume63
    Issue number4
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Deuterium
    Carbon films
    Silicon
    deuterium
    carbon
    arc discharges
    silicon
    profiles
    secondary ion mass spectrometry
    diffusion coefficient
    trapping
    activation energy
    Secondary ion mass spectrometry
    atmospheres
    Activation energy

    Cite this

    Vainonen-Ahlgren, E. ; Ahlgren, T. ; Likonen, Jari ; Lehto, Sari ; Sajavaara, T. ; Rydman, W. ; Keinonen, J. ; Wu, C. / Deuterium diffusion in silicon-doped diamondlike carbon films. In: Physical Review B: Condensed Matter and Materials Physics. 2001 ; Vol. 63, No. 4.
    @article{2c0e10994a4f4e17b80d0ef78c0341b6,
    title = "Deuterium diffusion in silicon-doped diamondlike carbon films",
    abstract = "Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic-recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5±0.2, 0.7±0.2, 0.6±0.2, and 1.2±0.2 eV for samples containing 0, 6, 15, and 33 at.{\%} of Si, respectively.",
    author = "E. Vainonen-Ahlgren and T. Ahlgren and Jari Likonen and Sari Lehto and T. Sajavaara and W. Rydman and J. Keinonen and C. Wu",
    year = "2001",
    doi = "10.1103/PhysRevB.63.045406",
    language = "English",
    volume = "63",
    journal = "Physical Review B",
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    Vainonen-Ahlgren, E, Ahlgren, T, Likonen, J, Lehto, S, Sajavaara, T, Rydman, W, Keinonen, J & Wu, C 2001, 'Deuterium diffusion in silicon-doped diamondlike carbon films', Physical Review B: Condensed Matter and Materials Physics, vol. 63, no. 4, 045406. https://doi.org/10.1103/PhysRevB.63.045406

    Deuterium diffusion in silicon-doped diamondlike carbon films. / Vainonen-Ahlgren, E. (Corresponding Author); Ahlgren, T.; Likonen, Jari; Lehto, Sari; Sajavaara, T.; Rydman, W.; Keinonen, J.; Wu, C.

    In: Physical Review B: Condensed Matter and Materials Physics, Vol. 63, No. 4, 045406, 2001.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Deuterium diffusion in silicon-doped diamondlike carbon films

    AU - Vainonen-Ahlgren, E.

    AU - Ahlgren, T.

    AU - Likonen, Jari

    AU - Lehto, Sari

    AU - Sajavaara, T.

    AU - Rydman, W.

    AU - Keinonen, J.

    AU - Wu, C.

    PY - 2001

    Y1 - 2001

    N2 - Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic-recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5±0.2, 0.7±0.2, 0.6±0.2, and 1.2±0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.

    AB - Diffusion of deuterium in diamondlike carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic-recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and trapping of D were taken into account in this model. Diffusion coefficients obtained for nontrapped D resulted in activation energies of 1.5±0.2, 0.7±0.2, 0.6±0.2, and 1.2±0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.

    U2 - 10.1103/PhysRevB.63.045406

    DO - 10.1103/PhysRevB.63.045406

    M3 - Article

    VL - 63

    JO - Physical Review B

    JF - Physical Review B

    SN - 2469-9950

    IS - 4

    M1 - 045406

    ER -